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| SUD17N25-165 New Product Vishay Siliconix N-Channel 250-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 250 D TrenchFETr Power MOSFET D 175_C Junction Temperature ID (A) 17 rDS(on) (W) 0.165 @ VGS = 10 V APPLICATIONS D Automotive such as - Diesel Fuel Injection - High-Side Switch - Motor Drives D TO-252 Drain Connected to Tab G D S G Top View Ordering Information: SUD17N25-165--E3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 250 "20 17 9.8 20 17 5 1.25 136b 3a -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta J ti t A bi t Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x1" FR4 Board. b. See SOA curve for voltage derating. Document Number: 72851 S-40578--Rev. A, 29-Mar-04 www.vishay.com t v 10 sec Steady State Symbol RthJA RthJC Typical 15 40 0.85 Maximum 18 50 1.1 Unit _C/W C/W 1 SUD17N25-165 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 250 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currentb IDSS ID(on) VDS = 250 V, VGS = 0 V, TJ = 125_C VDS = 250 V, VGS = 0 V, TJ = 175_C VDS = 15 V, VGS = 10 V VGS = 10 V, ID = 14 A Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs VGS = 10 V, ID = 14 A, TJ = 125_C VGS = 10 V, ID = 14 A, TJ = 175_C VDS = 15 V, ID = 17 A 36 17 0.131 0.165 0.347 0.462 S W 250 2.5 4.0 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 125 V, RL = 7.35 W ID ^ 17 A, VGEN = 10 V, Rg = 2.5 W VDS = 125 V, VGS = 10 V, ID = 17 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 1950 160 70 30 10 10 1.6 15 130 30 100 25 195 45 150 ns W 42 nC pF Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 17 A, VGS = 0 V IF = 17 A, di/dt = 100 A/ms 0.9 115 20 1.5 175 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72851 S-40578--Rev. A, 29-Mar-04 SUD17N25-165 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 6 V 5V I D - Drain Current (A) 20 Vishay Siliconix Transfer Characteristics 16 I D - Drain Current (A) 16 12 12 8 8 TC = 125_C 4 25_C -55_C 0 4 4V 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Transconductance 60 TC = -55_C 50 g fs - Transconductance (S) 40 30 20 10 0 0 4 8 12 16 20 25_C 125_C r DS(on)- On-Resistance ( W ) 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0.00 0 On-Resistance vs. Drain Current VGS = 10 V 4 8 12 16 20 ID - Drain Current (A) 2800 ID - Drain Current (A) 20 VDS = 125 V ID = 17 A Capacitance Gate Charge V GS - Gate-to-Source Voltage (V) C - Capacitance (pF) 2100 16 Ciss 12 1400 8 700 Crss Coss 0 0 40 80 120 160 200 VDS - Drain-to-Source Voltage (V) 4 0 0 8 16 24 32 40 48 56 Qg - Total Gate Charge (nC) Document Number: 72851 S-40578--Rev. A, 29-Mar-04 www.vishay.com 3 SUD17N25-165 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.8 2.4 rDS(on) - On-Resiistance (Normalized) 2.0 1.6 1.2 0.8 0.4 -50 VGS = 10 V ID = 17 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage TJ = 150_C 10 TJ = 25_C -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 20 100 Safe Operating Area 16 I D - Drain Current (A) I D - Drain Current (A) 10 Limited by rDS(on) 10 ms 100 ms 12 8 1 TC = 25_C Single Pulse 1 ms 10 ms 100 ms, dc 4 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse Normalized Thermal Transient Impedance, Junction-to-Case 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 72851 S-40578--Rev. A, 29-Mar-04 10-1 1 4 |
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