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| SUM16N20-125 New Product Vishay Siliconix N-Channel 200-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 200 rDS(on) (W) 0.125 @ VGS = 10 V 0.150 @ VGS = 6 V ID (A) 16 14.6 D D D D TrenchFETr Power MOSFETS 175_C Junction Temperature New Low Thermal Resistance Package PWM Optimized for Fast Switching APPLICATIONS D Automotive - 42-V EPS and ABS - DC/DC Conversion - Motor Drives D Isolated DC/DC converters - Primary-Side Switch - High Voltage Synchronous Rectifier D TO-263 G G DS S N-Channel MOSFET Top View SUM16N20-125 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 200 "20 16 9.2 25 10 5 100b 3.75 - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Junction-to-Case (Drain) Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 72076 S-31273--Rev. C, 16-Jun-03 www.vishay.com Mount)c Symbol RthJA RthJC Limit 40 1.5 Unit _C/W 1 SUM16N20-125 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 160 V, VGS = 0 V Zero Gate Voltage Drain Current g IDSS VDS = 160 V, VGS = 0 V, TJ = 125_C VDS = 160 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Drain Source On State Resistancea VGS = 10 V, ID = 15 A, TJ = 125_C rDS( ) DS(on) VGS = 10 V, ID = 15 A, TJ = 175_C VGS = 6 V, ID = 10 A Forward Transconductancea gfs VDS = 15 V, ID = 25 A 10 0.100 25 0.100 0.125 0.268 0.388 0.150 S W 200 V 2 4 "100 1 50 250 A m mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd RG td(on) tr td(off) tf VDD = 100 V, RL = 4 W ID ^ 25 A, VGEN = 10 V, RG = 2.5 W VDS = 100 V, VGS = 10 V, ID = 25 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 1330 140 58 24 9 9 4.0 10 175 25 110 15 260 40 165 ns W 36 nC pF Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr 25_C)b 16 25 IF = 25 A, VGS = 0 V 1.0 105 IF = 25 A, di/dt = 100 A/ms , m 7 0.37 1.5 160 11 0.88 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72076 S-31273--Rev. C, 16-Jun-03 SUM16N20-125 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 25 VGS = 10 thru 6 V 20 I D - Drain Current (A) I D - Drain Current (A) 20 25 Vishay Siliconix Transfer Characteristics 15 15 10 5V 5 4V 0 0 2 4 6 8 10 10 TC = 125_C 5 25_C - 55_C 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 50 TC = - 55_C r DS(on) - On-Resistance ( W ) 40 g fs - Transconductance (S) 25_C 30 125_C 0.16 0.20 On-Resistance vs. Drain Current VGS = 6 V 0.12 20 0.08 VGS = 10 V 10 0.04 0 0 5 10 15 20 25 0.00 0 5 10 15 20 25 ID - Drain Current (A) ID - Drain Current (A) Capacitance 2000 20 Gate Charge 1600 C - Capacitance (pF) Ciss 1200 V GS - Gate-to-Source Voltage (V) 16 VDS = 100 V ID = 25 A 12 800 8 400 Crss 4 Coss 0 0 40 80 120 160 200 0 0 8 16 24 32 40 VDS - Drain-to-Source Voltage (V) Document Number: 72076 S-31273--Rev. C, 16-Jun-03 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM16N20-125 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 3.2 2.8 r DS(on) - On-Resistance (W) (Normalized) 2.4 2.0 1.6 1.2 0.8 0.4 0.0 - 50 1 0 VGS = 10 V ID = 15 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage TJ = 150_C 10 TJ = 25_C - 25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature 250 240 ID = 1.0 mA V (BR)DSS (V) 230 220 210 200 190 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72076 S-31273--Rev. C, 16-Jun-03 SUM16N20-125 New Product THERMAL RATINGS Vishay Siliconix Maximum Avalanche and Drain Current vs. Case Temperature 20 100 Safe Operating Area Limited by rDS(on) 16 I D - Drain Current (A) I D - Drain Current (A) 10 10 ms 100 ms 12 1 ms 10 ms TC = 25_C Single Pulse 100 ms dc 8 1 4 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 1000 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) Document Number: 72076 S-31273--Rev. C, 16-Jun-03 www.vishay.com 5 |
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