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SUP90P06-09L
New Product
Vishay Siliconix
P-Channel 60-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
-60
FEATURES
D TrenchFETr Power MOSFET ID (A)c
-90 -90
rDS(on) (W)
0.0093 @ VGS = -10 V 0.0118 @ VGS = -4.5 V
APPLICATIONS
D DC/DC Primary Switch D Automotive - 12-V Boardnet - High-Side Switches - Motor Drives
TO-220AB
S
G DRAIN connected to TAB
GDS Top View Ordering Information: SUP90P06-09L--E3 D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentc (TJ = 175_C) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0 1 mH 0.1 TC = 25_C TA = 25_C TC = 25_C TC = 125_C
Symbol
VDS VGS ID IDM IAS EAS PD TJ, Tstg
Limit
-60 "20 -90 -67 -200 -65 211 250b 2.4 -55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient Free Air Junction-to-Case Notes: a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. Limited by package. Document Number: 73010 S-41203--Rev. A, 21-Jun-04 www.vishay.com
Symbol
RthJA RthJC
Limit
62 0.6
Unit
_C/W
1
SUP90P06-09L
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -60 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = -60 V, VGS = 0 V, TJ = 125_C VDS = -60 V, VGS = 0 V, TJ = 175_C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -30 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = -10 V, ID = -30 A, TJ = 125_C VGS = -10 V, ID = -30 A, TJ = 175_C VGS = -4.5 V, ID = -20 A Forward Transconductancea gfs VDS = -15 V, ID = -30 A 20 0.0094 -120 0.0074 0.0093 0.0150 0.0190 0.0118 S W -60 -1 -3 "100 -1 -50 -250 A m mA V nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = -30 V, RL = 0.33 W 30 ID ] -90 A, VGEN = -10 V, Rg = 2.5 W f = 1.0 MHz VDS = -30 V, VGS = -10 V, ID = -90 A , , VGS = 0 V, VDS = -25 V, f = 1 MHz 9200 975 760 160 40 36 3 20 190 140 300 30 285 210 450 ns W 240 nC pF
Gate-Drain Chargec Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Timec Fall Timec Timec
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = -50 A, di/dt = 100 A/ms , m IF = -50 A, VGS = 0 V -1.0 60 -3 0.09 -90 -200 -1.5 90 -4.5 0.2 A V ns A mC
Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
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Document Number: 73010 S-41203--Rev. A, 21-Jun-04
SUP90P06-09L
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
200 5V 160 I D - Drain Current (A) VGS = 10 thru 6 V I D - Drain Current (A) 160 200
Vishay Siliconix
Transfer Characteristics
120 4V 80
120
80 TC = 125_C 25_C -55_C
40 2V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 3V
40
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VGS - Gate-to-Source Voltage (V)
Transconductance
200 TC = -55_C g fs - Transconductance (S) 160 r DS(on) - On-Resistance ( W ) 25_C 0.016 0.020
On-Resistance vs. Drain Current
120
125_C
0.012 VGS = 4.5 V 0.008 VGS = 10 V
80
40
0.004
0 0 10 20 30 40 50 60 70 80 ID - Drain Current (A) 15000
0.000 0 20 40 60 80 100 120
ID - Drain Current (A) 20 VDS = 30 V ID = 90 A
Capacitance
Gate Charge
12000 C - Capacitance (pF) Ciss 9000
V GS - Gate-to-Source Voltage (V)
16
12
6000
8
3000 Coss 0 0 Crss 10 20 30 40 50 60
4
0 0 40 80 120 160 200 240 280 320 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 73010 S-41203--Rev. A, 21-Jun-04
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3
SUP90P06-09L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2.0
On-Resistance vs. Junction Temperature
100 VGS = 10 V ID = 30 A I S - Source Current (A)
Source-Drain Diode Forward Voltage
1.7 rDS(on) - On-Resiistance (Normalized)
1.4
TJ = 150_C 10
TJ = 25_C
1.1
0.8
0.5 -50
-25
0
25
50
75
100
125
150
175
1
0.0
0.3
0.6
0.9
1.2
TJ - Junction Temperature (_C)
VSD - Source-to-Drain Voltage (V)
1000
Avalanche Current vs. Time
Drain Source Breakdown vs. Junction Temperature
76 ID = 10 mA
72 100 V (BR)DSS (V) I Dav (a) IAV (A) @ TA = 25_C 10 68
64 1 IAV (A) @ TA = 150_C 0.1 0.0001 0.001 0.01 tin (Sec) 0.1 1 56 -50
60
-25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (_C)
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Document Number: 73010 S-41203--Rev. A, 21-Jun-04
SUP90P06-09L
New Product
THERMAL RATINGS
Maximum Avalanche and Drain Current vs. Case Temperature
200
Vishay Siliconix
1000
Safe Operating Area
Limited by rDS(on) 10 ms
150 I D - Drain Current (A) I D - Drain Current (A)
100 100 ms 10 1 ms 10 ms 1 100 ms, dc TC = 25_C Single Pulse
100 Limited by Package
50
0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C)
0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V)
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
Notes:
0.1 0.1 0.05 0.02 Single Pulse
PDM t1
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
0.01
10-4
10-3
10-2 Square Wave Pulse Duration (sec)
10-1
1
Document Number: 73010 S-41203--Rev. A, 21-Jun-04
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