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| TC7320 TC7320 Initial Release Six Pair N- and P-Channel Enhancement-Mode MOSFET Features Six N- and P-channel MOSFET pairs Integrated gate-source resistor Integrated gate-source zener diode Low threshold Low on-resistance Low input capacitance Fast switching speeds Free from secondary breakdowns Low input and output leakage General Description The Supertex TC7320FG consists of a six pairs of high voltage low threshold N-channel and P-channel MOSFETs in a 32-lead LQFP package. All the MOSFETs have integrated gate-source resistors and gate-source zener diode clamps which are desired for high voltage pulser applications. These low threshold enhancement-mode (normally-off) transistors utilize an advanced lateral DMOS structure and Supertex's wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex's lateral DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Application High voltage pulsers Amplifiers Buffers Piezoelectric transducer drivers General purpose line drivers Logic level interfaces Absolute Maximum Ratings* Drain-to-Source Voltage Drain-to-Gate Voltage Operating and Storage Temperature Soldering Temperature* *Distance of 1.6mm from case for 10 seconds. BVDSS BVDGS -55C to +150C 300C Ordering Information Order Number / Package 32-Lead LQFP TC7320FG TC7320FG-G* *"Green" certified package BVDSS / BVDGS N-Channel P-Channel 200V 200V -200V -200V RDS(ON) (max) N-Channel P-Channel 20 20 20 20 A080405 1 A080405 TC7320 N-Channel Electrical Characteristics (at TA=25C unless otherwise specified) Symbol BVDSS VGS(th) VGS(th) RGS RGS VzGS VzGS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate-Source Shunt Resistor Change in RGS with Temperature Gate-Source Zener Voltage Change in VzGS with Temperature Zero Gate Voltage Drain Current Min 200 Typ Max Units V V mV/C K %/C V mV/C A mA A %/C mmho pF Conditions VGS=0V, ID=1mA VGS=VDS, ID=1mA VGS=VDS, ID=1mA IGS=100A IGS=100A IGS=2.0mA IGS=2.0mA VGS=0V, VDS=Max Rating VGS=0V, VDS=0.8 Max Rating, TA=125C VGS=10V, VDS=25V VGS=10V, ID=150mA VGS=10V, ID=150mA VDS=25V, ID=200mA VGS=0V, VDS=25V f=1MHz VDD=25V, ID=500mA RGEN=25 VGS=0V, ISD=0.5A VGS=0V, ISD=0.5A 0.4 0.9 10 -4.5 8.0 TBD 18 TBD 10 1.0 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr On-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-Off Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 1.0 20 1.0 150 150 75 25 12 15 25 40 1.8 300 ns V ns Notes: 1) All DC parameters 100% tested at 25C unless otherwise stated. (Pulsed test: 300s pulse at 2% duty cycle.) 2) All AC parameters sample tested. N-Channel Switching Waveforms and Test Circuit VDD 10V Input 0V 10% t(ON) td(ON) VDD Output 0V 90% 90% 10% tr t(OFF) td(OFF) tf 10% Input 90% Pulse Generator RGEN D.U.T RL OUTPUT 2 A080405 TC7320 P-Channel Electrical Characteristics Symbol BVDSS VGS(th) VGS(th) RGS RGS VzGS VGS(th) IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate-Source Shunt Resistor Change in RGS with Temperature Gate-Source Zener Voltage Change in VzGS with Temperature Zero Gate Voltage Drain Current (at TA=25C unless otherwise specified) Min -200 Typ Max Units V V mV/C K %/C V mV/C A mA A %/C mmho pF Conditions VGS=0V, ID=-1mA VGS=VDS, ID=-1mA VGS=VDS, ID=-1mA IGS=-100A IGS=-100A IGS=-2.0mA IGS=-2.0mA VGS=0V, VDS=Max Rating VGS=0V, VDS=0.8 Max Rating, TA=125C VGS=-10V, VDS=-25V VGS=-10V, ID=-150mA VGS=-10V, ID=-150mA VDS=-25V, ID=-200mA VGS=0V, VDS=-25V f=1MHz VDD=-25V, ID=-500mA RGEN=25 VGS=0V, ISD=-0.5A VGS=0V, ISD=-0.5A -2.3 0.9 10 4.5 8.0 TBD 18 TBD -10 -1.0 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr On-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-Off Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time -1.0 20 1.0 150 200 100 35 15 20 35 30 -1.8 300 ns V ns Notes: 1) All DC parameters 100% tested at 25C unless otherwise stated. (Pulsed test: 300s pulse at 2% duty cycle.) 2) All AC parameters sample tested. P-Channel Switching Waveforms and Test Circuit 0V Input -10V 90% t(ON) td(ON) 0V Output VDD tr 90% 10% t(OFF) td(OFF) 90% RL 10% VDD tf Input OUTPUT 10% Pulse Generator RGEN D.U.T 3 A080405 TC7320 Pin Configuration Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Function GP1 GN1 GN2 GN3 GN6 GN5 GN4 GP4 GP5 GP6 DP6 VPP2 DP5 DP4 VSUB VNN3 Pin 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Function DN6 DN3 DN5 N/C VNN2 DN2 DN4 DN1 VNN1 VPP1 DP1 DP2 VPP3 DP3 GP3 GP2 The VSUB pin needs to be connected to the most positive supply 32 Lead Low Quad Flat Pack (LQFP)* Package Outline All dimensions are in millimeters 9.00 32 7.00 1 32 Lead LQFP 9.00 7.00 17 9 Top View 1.50 0.37 0.80 Side View 1.00 *"Green" certified package 4 A080405 TC7320 Typical I-V Characteristics VPP1 N-Channel 1.4 1.2 1 VGS = 10V GN1 VNN1 VPP2 GP1 DP1 DN1 ID (amperes) 0.8 0.6 0.4 0.2 0 0 VGS = 5.0V GP2 DP2 DN2 GN2 VNN2 VPP3 GP3 5.0 10 15 20 25 GN3 DP3 DN3 VDS (Volts) P-Channel -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 VGS = 5.0V GN5 VNN3 VPP1 VGS = 10V GP4 DP4 DN4 GN4 VNN1 VPP2 GP5 DP5 DN5 ID (amperes) VNN2 VPP3 0 -5.0 -10 -15 -20 -25 VDS (Volts) GP6 DP6 DN6 GN6 VNN3 VSUB Doc# DSFP-TC7320 A080405 5 A080405 |
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