 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TCMD1000 / TCMD4000 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, Single/Quad Channel, Half Pitch Mini-Flat Package Features * * * * * * * Low profile package (half pitch) AC Isolation test voltage 3750 VRMS Low coupling capacitance of typical 0.3 pF Low temperature coefficient of CTR Wide ambient temperature range Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 17298 C E 9 Agency Approvals * UL1577, File No. E76222 System Code M, Double Protection * CSA 22.2 bulletin 5A, Double Protection 1 A 4 PIN 2 C 16 PIN 8 Applications Programmable logic Modems Answering machines General applications C e3 Pb Pb-free The elements provide a fixed distance between input and output for highest safety requirements. Order Information Description The TCMD1000 / TCMD4000 consist of a photodarlington optically coupled to a gallium arsenide infrared-emitting diodes in either a 4 pin or 16 pin miniflat package. TCMD1000 TCMD4000 Part Remarks CTR > 600 %, SMD-4 CTR > 600 %, SMD-16 Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature tp 10 s Test condition Symbol VR IF IFSM Pdiss Tj Value 6 60 1.5 100 125 Unit V mA A mW C Document Number 83513 Rev. 1.6, 26-Oct-04 www.vishay.com 1 TCMD1000 / TCMD4000 Vishay Semiconductors Output Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature tp/T = 0.5, tp 10 ms Test condition Symbol VCEO VECO IC ICM Pdiss Tj Value 35 7 80 100 150 125 Unit V V mA mA mW C Coupler Parameter AC isolation test voltage (RMS) Total power dissipation Operating ambient temperature range Storage temperature range Soldering temperature 1) Test condition Symbol VISO Ptot Tamb Tstg Tsld 1) Value 3750 250 - 40 to + 100 - 40 to + 100 240 Unit VRMS mW C C C Related to standard climate 23/50 DIN 50014 Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Junction capacitance Test condition IF = 50 mA VR = 0 V, f = 1 MHz Symbol VF Cj Min Typ. 1.25 50 Max 1.6 Unit V pF Output Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test condition IC = 100 A IE = 100 A VCE = 10 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min 35 7 100 Typ. Max Unit V V nA Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test condition IF = 10 mA, IC = 1 mA IF = 10 mA, VCE = 5 V, RL = 100 f = 1 MHz Symbol VCEsat fc Ck 10 0.3 Min Typ. Max 0.3 Unit V kHz pF www.vishay.com 2 Document Number 83513 Rev. 1.6, 26-Oct-04 TCMD1000 / TCMD4000 Vishay Semiconductors Current Transfer Ratio Parameter IC/IF Test condition VCE = 2 V, IF = 1 mA Part TCMD1000 TCMD4000 Symbol CTR CTR Min 600 600 Typ. 800 800 Max Unit % % Switching Characteristics Parameter Rise time Turn-off time Test condition VCE = 2 V, IC =10 mA, RL = 100 (see figure 1) VCE = 2 V, IC =10 mA, RL = 100 (see figure 1) +VCC IC = 10 mA; Symbol tr toff Min Typ. 300 250 Max Unit s s 0 IF IF IF 0 IC 100% 90% tp 96 11698 RG = 50 tp = 0.01 T tp = 50 ms Channel I 50 14779 t Channel II RL Oscilloscope RI = 1 M CI = 20 pF 10% 0 tr td ton pulse duration delay time rise time turn-on time ts tf toff t storage time fall time turn-off time tp td tr ton (= td + tr) ts tf toff (= ts + tf) Figure 1. Test circuit, non-saturated operation Figure 2. Switching Times Typical Characteristics (Tamb = 25 C unless otherwise specified) 1.3 I F=10mA VF - Forward Voltage ( V ) 1000.0 I F - Forward Current ( mA ) 1.2 1.1 1.0 0.9 0.8 0 100.0 10.0 1.0 20 40 60 80 100 14390 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V F - Forward Voltage ( V ) 14389 Tamb - Ambient Temperature (C ) Figure 3. Forward Voltage vs. Ambient Temperature Figure 4. Forward Current vs. Forward Voltage Document Number 83513 Rev. 1.6, 26-Oct-04 www.vishay.com 3 TCMD1000 / TCMD4000 Vishay Semiconductors CTRrel - Relative Current Transfer Ratio 1.5 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -30-20-10 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient T emperature (C ) IC - Collector Current ( mA ) 100.0 V CE=5V I F=1mA I F=2mA 1mA 10.0 0.5mA 1.4 1.0 0.2mA 0.1mA 0.1 0.1 14394 14391 1.0 10.0 100.0 V CE - Collector Emitter Voltage ( V ) Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature Figure 8. Collector Current vs. Collector Emitter Voltage 100000 ICEO- Collector Dark Current, with open Base ( nA) V CEsat Collector Emitter Saturation Voltage (V) - 1.1 CTR=200% 1.0 100% 0.9 0.8 0.7 0.6 1 50% 25% 10000 1000 100 10 1 20 V CE=10V I F=0 30 40 50 60 70 80 90 100 10 I C - Collector Current ( mA ) 100 14392 Tamb - Ambient T emperature (C ) 14395 Figure 6. Collector Dark Current vs. Ambient Temperature Figure 9. Collector Emitter Saturation Voltage vs. Collector Current V CE=2V IC - Collector Current ( mA ) CTR - Current Transfer Ratio ( % ) 1000.0 10000 V CE=2V 100.0 1000 10.0 100 1.0 0.1 0.1 14393 1.0 10.0 100.0 14396 10 0.1 1.0 10.0 100.0 I F - Forward Current ( mA ) I F - Forward Current ( mA ) Figure 7. Collector Current vs. Forward Current Figure 10. Current Transfer Ratio vs. Forward Current www.vishay.com 4 Document Number 83513 Rev. 1.6, 26-Oct-04 TCMD1000 / TCMD4000 Vishay Semiconductors Package Dimensions in mm 16283 Document Number 83513 Rev. 1.6, 26-Oct-04 www.vishay.com 5 TCMD1000 / TCMD4000 Vishay Semiconductors Package Dimensions in mm 15226 www.vishay.com 6 Document Number 83513 Rev. 1.6, 26-Oct-04 TCMD1000 / TCMD4000 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83513 Rev. 1.6, 26-Oct-04 www.vishay.com 7 |
Price & Availability of TCMD4000
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |