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THM1001TE SiGe HBT MMIC POWER AMPLIFIER
Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the THM1001TE is designed for 2.4GHz wireless applications including Bluetoothtm Class 1 wireless technology and 2.4GHz cordless telephone applications. It delivers +23 dBm output power, making it capable of overcoming insertion losses of up to 3.0dB between amplifier output and antenna. The silicon-germanium structure of the THM1001TE, and its exposed-die-pad package, soldered to the system PCB, provide high thermal conductivity and a subsequently low junction temperature.
Features * +23 dBm at 44% Power Added Efficiency * Temperature stability better than 1dB * Power-control and Power-down modes * Single 3.3 V Supply Operation * Temperature Rating: -40C to +85C * 8 lead Exposed Pad MSOP8 Plastic Package E_PAD MSOP8
Applications * Bluetoothtm Wireless Technology (Class 1) * USB Dongles, modules * PCMCIA, Flash cards * Access Points * 2.4GHz cordless telephone
60-8, Gasan-dong, Kumchun-Gu 60- GasanKumchunSeoul, Korea. 153-023 153Page 1
http://www.tachyonics.co.kr http://www.tachyonics.co.kr Rev. 1.1
THM1001TE
Function Block Diagram
VCC0 VRAMP VCTRL
BIAS / Control Block
PIN
Stage 1
Interstage Matching Block
Stage 2
POUT/VCC2
VCC1
Pin Configuration
VCTRL VRAMP NC IN Die PAD OUT/ VCC2 NC VCC1 VCC0 GND
Pin Description
Pin No 1 2 3 4 5 6 7 8 Die Pad Name VCTL VRAMP NC IN VCC0 VCC1 NC OUT/VCC2 GND
Description Controls the output level of the power amplifier. Power amplifier enable pin. No connection. Power amplifier RF input. Bias supply voltage. Stage 1 collector supply voltage. No connection. Power Amplifier Output and Stage 2 collector supply voltage. Heatslug Die Pad is ground.
60-8, Gasan-dong, Kumchun-Gu 60- GasanKumchunSeoul, Korea. 153-023 153Page 2
http://www.tachyonics.co.kr http://www.tachyonics.co.kr Rev. 1.1
THM1001TE
Absolute Maximum Ratings
Parameter Supply Voltage Control Voltage Ramping Voltage IN TA TSTG Tj Symbol Vcc VCTL VRAMP RF Input Power Operating Temperature Range Storage Temperature Range Maximum Junction Temperature Unit V V V dBm C C C -40 -40 Min -0.3 -0.3 -0.3 Max +3.6 Vcc Vcc +8 +85 +150 +150
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. Handling and assembly of this device should be at ESD protected workstations. DC Electrical Characteristics Condition : VCC0=VCC1=VCC2=VRAMP=3.3V, TA=25 , Input and Output externally matched to 50
Symbol Vcc Icc ICCtemp VCTL ICTL 1 3 VRAMP 3 Istby 1 Logic Low Voltage Leakage Current when Vramp=0V, Vctl=high 0.4 3 10 V 1 3 Note Parameter Supply Voltage Supply Current (Icc=Ivcc0+Ivcc2), VCTL=3.3V Supply Current Variation over Temperature from TA=25 (-40 unless otherwise noted.
Typ. 3.3 90 TBD 0 ~ VCC 130 2.4 V 150 Max. Unit V mA % V
Min.
60-8, Gasan-dong, Kumchun-Gu 60- GasanKumchunSeoul, Korea. 153-023 153Page 3
http://www.tachyonics.co.kr http://www.tachyonics.co.kr Rev. 1.1
THM1001TE
AC Electrical Characteristics Condition : VCC0=VCC1=VCC2=VRAMP=3.3V, PIN=+2dBm, TA=25 Input and Output externally matched to 50
Symbol fL-U Pout Note 3 1 1 Ptemp 3 Parameter Frequency Range Output Power @PIN = +2dBm, VCTL=3.3V Output Power @PIN = +2dBm, VCTL=0.4V Output Power Variation over temperature (-40 , f=2.45GHz,
unless otherwise noted.
Min. Typ. 2400 ~ 2500 23 -20 TBD -10 Max. Unit MHz dBm dBm dB
dPOUT/dVCTL PAE
3
120
dBm/V %
G
26 25 0.7 35 35 34 1.0 30
dB dB dB dBc dB dB
GVAR 2f,3f,4f,5f |S21|OFF |S12| STAB
3 3, 4 2 2 2
All non-harmonically Related outputs less than -50dBc
Notes : (1) Guaranteed by production test at TA=25 . (2) Guaranteed by design only (3) Guaranteed by design and characterization (4) Harmonic levels are greatly affected by topology of external matching networks.
60-8, Gasan-dong, Kumchun-Gu 60- GasanKumchunSeoul, Korea. 153-023 153Page 4
http://www.tachyonics.co.kr http://www.tachyonics.co.kr Rev. 1.1
THM1001TE
Typical Characteristics
60-8, Gasan-dong, Kumchun-Gu 60- GasanKumchunSeoul, Korea. 153-023 153Page 5
http://www.tachyonics.co.kr http://www.tachyonics.co.kr Rev. 1.1
THM1001TE
Typical Characteristics
60-8, Gasan-dong, Kumchun-Gu 60- GasanKumchunSeoul, Korea. 153-023 153Page 6
http://www.tachyonics.co.kr http://www.tachyonics.co.kr Rev. 1.1
THM1001TE
Evaluation Board Schematic
C=11 C=10 pF
C=10 C=10 pF
Component List
Designation C1 C2, C6 C3 C4, C9 C5, C10, C11 C7 C8 L1
Description Cap 10 nF DC50V Chip Monolithic Ceramic Cap 1 nF DC50V Chip Monolithic Ceramic Cap 1 pF DC50V Chip Monolithic Ceramic Cap 3 pF DC50V Chip Monolithic Ceramic Cap 10 pF DC50V Chip Monolithic Ceramic Cap 1 uF Chip Monolithic Ceramic Cap 2 pF DC50V Chip Monolithic Ceramic
Part Number muRata #GRM36X7R103K16 muRata #GRM36X7R102K50 muRata #GRM36C0G010C50 muRata #GRM36C0G030C50 muRata #GRM36C0G100D50 muRata #GRM36Y5V105Z6.3 muRata #GRM36C0G020C50 muRata #LQG15HN6N8J02
60-8, Gasan-dong, Kumchun-Gu 60- GasanKumchunSeoul, Korea. 153-023 153Page 7
http://www.tachyonics.co.kr http://www.tachyonics.co.kr Rev. 1.1
THM1001TE
Evaluation Board Layout
Board Size 30 x 30 mm2 1. Top layer 3. Middle2 layer DC Path
2. Middle1 Layer Inner GND
4. Bottom layer Ground Plane
Material & Structure of PCB Hole14 1 FR4 H1 = 220um 2 FR4 H2 = 200um 3 FR4 H3 = 220um 4 Bot Cond 4 Bot Solder Mask Cond 3 Cond 2 Top Solder Mask Top Cond 1
60-8, Gasan-dong, Kumchun-Gu 60- GasanKumchunSeoul, Korea. 153-023 153Page 8
http://www.tachyonics.co.kr http://www.tachyonics.co.kr Rev. 1.1
THM1001TE
Dimension in mm Symbol Min A A1 A2 b C D E E1 e e1 L L1 L2 0.40 0.05 0.75 0.25 0.13 Typ 0.10 0.85 3.00 BSC 4.90 BSC 3.00 BSC 0.65 BSC 1.95 BSC 0.55 0.95 BSC 0.25 BSC 0.70 Max 1.10 0.15 0.95 0.38 0.23 Note
60-8, Gasan-dong, Kumchun-Gu 60- GasanKumchunSeoul, Korea. 153-023 153Page 9
http://www.tachyonics.co.kr http://www.tachyonics.co.kr Rev. 1.1

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