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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM7785-60SL TECHNICAL DATA FEATURES T LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level T HIGH POWER P1dB=48.0dBm at 7.7GHz to 8.5GHz T HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz T BROAD BAND INTERNALLY MATCHED FET T HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) UNIT dBm dB A dB % dBc A C MIN. 47.0 5.0 -42 TYP. MAX. 48.0 6.0 13.2 35 -45 15.0 0.8 11.8 100 CHARACTERISTICS SYMBOL CONDITIONS Output Power at 1Db Gain P1dB Compression Point Power Gain at 1dB Gain G1dB VDS= 10V Compression Point f = 7.7 to 8.5GHz IDSset=9.5A Drain Current IDS1 Gain Flatness G add Power Added Efficiency 3rd Order Intermodulation IM3 Two-Tone Test Distortion Po=36.5dBm (Single Carrier Level) Drain Current IDS2 Channel Temperature Rise Tch VDS X IDS X Rth(c-c) Recommended Gate Resistance(Rg) : 28 (Max.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) ( Ta= 25C ) UNIT S V A V C/W MIN. -1.0 -5 TYP. 20 -1.8 38 0.6 MAX. -3.0 0.8 CONDITIONS VDS= 3V IDS= 12.0A VDS= 3V IDS= 200mA VDS= 3V VGS= 0V IGS= -1.0mA Channel to Case The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Aug. 2003 TIM7785-60SL ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage Temperature ( Ta= 25C ) SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 26 187 175 -65 to +175 PACKAGE OUTLINE (2-16G1B) 0.70.15 4 - C1.0 2.5 MIN. Unit in mm ? ? Gate @ Source A Drain @ @ A 20.40.3 0.1 -0.05 24.5 MAX. 16.4 MAX. +0.1 2.5 MIN. 2.60.3 17.40.4 8.00.2 0.2 MAX. 1.40.3 HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 2.40.3 5.5 MAX. TIM7785-60SL RF PERFORMANCE Output Power (Pout) vs. Frequency Pout(dBm) VDS=10V 49 IDS13.2A Pin=42.0dBm 48 47 46 7.7 7.9 8.1 8.3 8.5 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 51 freq.=8.5GHz 50 49 48 VDS=10V IDSset9.5A 80 Pout 70 60 50 Pout(dBm) 47 46 45 44 43 42 38 40 42 44 add 40 30 20 10 Pin(dBm) 3 add(%) TIM7785-60SL Power Dissipation(PT) vs. Case Temperature(Tc) 200 PT(W) 100 0 0 40 80 120 160 200 Tc( C ) IM3 vs. Power Characteristics -10 VDS=10V IDSset9.5A -20 freq.=8.5GHz f=5MHz -30 IM3(dBc) -40 -50 -60 32 34 36 38 40 42 Pout(dBm) @Single carrier level 4 |
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