 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| VISHAY TLWW9900 Vishay Semiconductors TELUXTM LED Description The TELUXTM series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology. The supreme heat dissipation of TELUXTM allows applications at high ambient temperatures. All packing units are binned for luminous flux and color to achieve best homogenous light appearance in application. 16 012 Features * * * * * * * Utilizing InGaN technology High luminous flux Supreme heat dissipation: RthJP is 90 K/W High operating temperature: Tj + 100 C Packed in tubes for automatic insertion Luminous flux and color categorized for each tube Small mechanical tolerances allow precise usage of external reflectors or lightguides * ESD-withstand voltage: > 1 kV acc. to MIL STD 883 D, Method 3015.7 Applications * Exterior lighting * Interior lighting * Dashboard illumination * Replaces incandescent lamps Parts Table Part TLWW9900 Color, Luminous Intensity White, V > 800 mlm 45 Angle of Half Intensity () Technology InGaN / YAG on SiC Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified TLWW9900 Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature t 5 s, 1.5 mm from body preheat temperature 100 C/ 30 sec. with cathode heatsink of 70 mm2 RthJP 90 K/W Test condition IR = 10 A Tamb 50 C tp 10 s Tamb 50 C Symbol VR IF IFSM PV Tj Tamb Tstg Tsd Value 5 50 0.1 255 100 - 40 to + 100 - 55 to + 100 260 Unit V mA A mW C C C C Thermal resistance junction/ ambient Thermal resistance junction/pin RthJA 200 K/W Document Number 83216 Rev. A1, 22-Apr-03 www.vishay.com 1 TLWW9900 Vishay Semiconductors VISHAY Optical and Electrical Characteristics Tamb = 25 C, unless otherwise specified White TLWW9900 Parameter Total flux Luminous intensity/Total flux Color temperature Angle of half intensity Total included angle Forward voltage Reverse voltage Junction capacitance Test condition IF = 50 mA, RthJA = 200 K/W IF = 50 mA, RthJA = 200 K/W IF = 50 mA, RthJA = 200 K/W IF = 50 mA, RthJA = 200 K/W 90 % of Total Flux Captured IF = 50 mA, RthJA = 200 K/W IR = 10 A VR = 0, f = 1 MHz Symbol V IV/V TK VF VR Cj 5 Min 800 Typ. 1500 0.8 5500 45 75 4.3 10 50 5.2 Max Unit mlm mcd/mlm K deg deg V V pF Chromaticity Coordinate Classification Group min 31a 31b 31c 31d 41a 41b 41c 41d 51a 51b 51c 51d tolerance 0.005 0.2900 0.3025 0.2900 0.3025 0.3150 0.3275 0.3150 0.3275 0.3400 0.3525 0.3400 0.3525 X max 0.3025 0.3150 0.3025 0.3150 0.3275 0.3400 0.3275 0.3400 0.3525 0.3650 0.3525 0.3650 min Y = 1.4x - 0.121 Y = 1.4x - 0.121 Y = 1.4x - 0.171 Y = 1.4x - 0.171 Y = 1.4x - 0.121 Y = 1.4x - 0.121 Y = 1.4x - 0.171 Y = 1.4x - 0.171 Y = 1.4x - 0.121 Y = 1.4x - 0.121 Y = 1.4x - 0.171 Y = 1.4x - 0.171 Y max Y = 1.4x - 0.071 Y = 1.4x - 0.071 Y = 1.4x - 0.121 Y = 1.4x - 0.121 Y = 1.4x - 0.071 Y = 1.4x - 0.071 Y = 1.4x - 0.121 Y = 1.4x - 0.121 Y = 1.4x - 0.071 Y = 1.4x - 0.071 Y = 1.4x - 0.121 Y = 1.4x - 0.121 www.vishay.com 2 Document Number 83216 Rev. A1, 22-Apr-03 VISHAY Typical Characteristics (Tamb = 25 C unless otherwise specified) 250 PV - Power Dissipation ( mW ) TLWW9900 Vishay Semiconductors 100 90 80 % Total Luminous Flux 225 200 175 150 125 100 75 50 25 0 0 20 40 60 80 100 120 16005 70 60 50 40 30 20 10 0 0 25 50 75 100 125 Total Included Angle (Degrees) RthJA = 200 K/W 16066 T amb - Ambient Temperature ( C ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 4. Percentage Total Luminous Flux vs. Total Included Angle for 60 emission angle 60 I F - Forward Current ( mA ) 230 220 210 R thJA in K/W 50 40 30 20 10 0 0 20 40 60 80 100 120 16009 Padsize 8 mm 2 per Anode Pin 200 190 180 RthJA = 200 K/W 170 160 0 50 16067 T amb - Ambient Temperature ( C ) 100 150 200 250 Cathode Padsize in mm 2 300 Figure 2. Forward Current vs. Ambient Temperature for InGaN Figure 5. Thermal Resistance Junction Ambient vs. Cathode Padsize 0 I v rel - Relative Luminous Intensity 10 20 30 I F - Forward Current ( mA ) 100 90 80 70 60 50 40 30 20 10 0 2.5 16062 White 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6 16006 3.0 3.5 4.0 4.5 5.0 V F - Forward Voltage ( V ) 5.5 Figure 3. Rel. Luminous Intensity vs. Angular Displacement for 60 emission angle Figure 6. Forward Current vs. Forward Voltage Document Number 83216 Rev. A1, 22-Apr-03 www.vishay.com 3 TLWW9900 Vishay Semiconductors VISHAY 1.8 V rel - Relative Luminous Flux 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 I F = 50 mA 0 20 40 60 80 100 16071 16065 T amb - Ambient Temperature ( C ) I V rel - Relative Luminous Intensity White 1.2 White I F = 50 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 400 450 500 550 600 650 700 750 800 i - Wavelength ( nm ) Figure 7. Rel. Luminous Flux vs. Ambient Temperature Figure 10. Relative Intensity vs. Wavelength f - Chromaticity coordinate shift (x,y) 0.345 White 0.340 0.335 0.330 Y 0.325 0.320 0.315 X I Spec - Specific Luminous Flux White 1.0 0.1 16063 1 10 I F - Forward Current ( mA ) 100 0 10 20 30 40 50 60 16198 I F - Forward Current ( mA ) Figure 8. Specific Luminous Flux vs. Forward Current Figure 11. Chromaticity Coordinate Shift vs. Forward Current 10.00 I V rel - Relative Luminous Flux 0.44 White Y and Y' Coordinates 0.42 0.40 51b 51a 41b 41a 31b 31a 41c 31d 31c 41d 51d 51c 1.00 0.38 0.36 0.34 0.32 0.30 0.28 0.26 0.24 0.10 0.01 1 16064 10 I F - Forward Current ( mA ) 100 0.22 0.28 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.36 0.37 18068 X Coordinates Figure 9. Relative Luminous Flux vs. Forward Current Figure 12. Coordinates of Colorgroups www.vishay.com 4 Document Number 83216 Rev. A1, 22-Apr-03 VISHAY Package Dimensions in mm TLWW9900 Vishay Semiconductors 16004 Document Number 83216 Rev. A1, 22-Apr-03 www.vishay.com 5 TLWW9900 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 83216 Rev. A1, 22-Apr-03 |
Price & Availability of TLWW9900
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |