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| TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (P Channel U-MOS / N Channel U-MOS ) TPCP8401 0.3 +0.1 2.9 0.1 0.05 0.025 M 6 4 2.4 0.1 2.8 0.1 A Motor Dreive Notebook PC Portable Machines and Tools * * * * Low drain-source ON resistance: Preliminary 8 Unit: mm 5 N Channel |Yfs| = Low leakage current: S (typ.) 1.16 +0.05 1.16 +0.05 0.15 0.15 0.7 Enhancement-mode : P Channel Vth = -0.8~-2.0 V (VDS = -10 V, ID = -1 mA) : N Channel Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) 2.9 0.2 Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD(1) PD(2) PD(1) Rating P Channel N Channel -30 -30 20 -3.5 -14 TBD TBD TBD 30 30 20 4.5 18 TBD TBD TBD TBD Unit V V V A 0.475 JEDEC 0.05 0.8 0.05 JEITA Drain power Single-device operation (Note 3a) dissipation (t = 10s) Single-device value at (Note 2a) dual operation (Note 3b) Drain power Drain power dissipation dissipation (t = 10s) (t = 10s) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) TOSHIBA 0.05 S 2-6J1E S 1 SOURCE1 5 DRAIN2 Weight: 0.080 g (typ.) 2 GATE1 6 DRAIN2 3 SOURCE2 7 DRAIN1 8 DRAIN1 4 GATE2 Circuit Configuration W (Note 2a) (Note 2b) PD(2) TBD 2.0 (Note 4a) -1.75 TBD 150 -55~150 C C 3.3 (Note 4b) 2.25 TOSHIBA mJ A mJ 8 0.05 7 6 Single pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at operation (Note 2a, 3b, 5) Channel temperature Storage temperature range EAS IAR EAR Tch Tstg 8 7 6 5 Note: (Note 1), (Note 2ab), (Note 3ab), (Note 4), (Note 5) Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 N-ch 2 3 P-ch 4 1 2002-09-09 0.16 Maximum Ratings (Ta = 25C) 0.05 5 0.24 0.10 0.09 P Channel IDSS = -10 A (VDS = -30 V) N Channel IDSS = 10 A (VDS = 30 V) A 0.65 1 0.95 0.95 3 0.05 1.6 P Channel RDS (ON) = 31 m (typ.) N Channel RDS (ON) = 20 m (typ.) High forward transfer admittance: P Channel |Yfs| = S (typ.) +0.2 1 -0.1 -0.3 +0.2 4 2.8 TPCP8401 Thermal Characteristics Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max TBD Unit Thermal resistance, channel to ambient (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b) TBD C/W TBD Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 2b) Single-device operation (Note 2a) TBD Marking Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: a) Device mounted on a glass-epoxy board (a) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: a) VDD = -24 V, Tch = 25C (Initial), L =0.5 mH, RG = 25 , IAR = -1.75 A b) VDD = 24 V, Tch = 25C (Initial), L =0.5 mH, RG = 25 , IAR = 2.25 A Note 5: Repetitive rating; pulse width limited by max channel temperature. Note 6: * on lower left of the marking indicates Pin 1. 2 2002-09-09 TPCP8401 P-ch Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS ton 0V -10 V 4.7 ID = -1.75 A VOUT RL = 6.8 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -30 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 20 V VDS = -10 V, ID = -1 mA VGS = -4 V, ID = -1.75 A VGS = -10 V, ID = -1.75 A VDS = -10 V, ID = -1.75 A Min -30 -15 -0.8 TBD Typ. 43 31 TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD Max 10 -10 -2.0 56 40 ns nC pF Unit A A V V m S VDD -15 V - Duty < 1%, tw = 10 s = VDD -24 V, VGS = -10 V, - ID = -3.5 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -3.5 A, VGS = 0 V Min Typ. Max -14 1.2 Unit A V 3 2002-09-09 TPCP8401 N-ch Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS ton ID = 2.25 A VOUT 4.7 RL = 5.0 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 2.25 A VGS = 10 V, ID = 2.25 A VDS = 10 V, ID = 2.25 A Min 30 15 1.3 TBD Typ. 30 20 TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD Max 10 10 2.5 39 26 ns nC pF Unit A A V V m S 10 V 0V VDD 15 V - Duty < 1%, tw = 10 s = VDD 24 V, VGS = 10 V, - ID =4.5 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR =4.5 A, VGS = 0 V Min Typ. Max 18 -1.2 Unit A V 4 2002-09-09 TPCP8401 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2002-09-09 |
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