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TPCS8101
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
TPCS8101
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 15 m (typ.) l High forward transfer admittance: |Yfs| = 12 S (typ.) l Low leakage current: IDSS = -10 A (max) (VDS = -30 V) l Enhancement-mode: Vth = -0.8~-2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating -30 -30 20 -6 -24 1.5 0.6 46.8 -6 0.15 150 -55 to 150 Unit V V V A W W mJ A mJ C C
JEDEC JEITA TOSHIBA
2-3R1B
Drain power dissipation Drain power dissipation
Weight: 0.035 g (typ.)
Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a, Note 4) Channel temperature Storage temperature range
Circuit Configuration
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.
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Thermal Characteristics
Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 83.3 208 Unit C/W C/W
Marking (Note 5)
Type
S8101
Lot No.
Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: a) Device mounted on a glass-epoxy board (a)
FR-4 25.4 x 25.4 x 0.8 (unit: mm)
b)
Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (unit: mm)
Note 3: VDD = -24 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 , IAR = -6.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: on lower right of the marking indicates Pin 1. Weekly code: (Three digits)
Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year)
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Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) RDS (ON) |Yfs| Ciss Crss Coss tr VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -30 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 20 V VDS = -10 V, ID = -1 mA VGS = -4 V, ID = -3 A VGS = -10 V, ID = -3 A VDS = -10 V, ID = -3 A Min 3/4 3/4 -30 -15 -0.8 3/4 3/4 6 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 32 15 12 1810 350 610 9 Max 10 -10 3/4 3/4 -2.0 40 25 3/4 3/4 3/4 3/4 3/4 Unit A A V V m S pF pF pF
Turn-ON time Switching time Fall time
ton
3/4
15
3/4 ns
tf
3/4
49
3/4
Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge
toff Qg Qgs Qgd VDD -24 V, VGS = -10 V, ID = -6 A
3/4 3/4 3/4 3/4
135 37 30 7
3/4 3/4 3/4 3/4 nC nC nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Test Condition -- IDR = -6 A, VGS = 0 V Min -- -- Typ. -- -- Max -24 1.2 Unit A V
Forward voltage (diode)
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PD - Ta (W)
2.0 (1) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) 1.6 (1) (NOTE 2a) (2) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) 1.2 (NOTE 2b) t = 10 s
DRAIN POWER DISSIPATION PD
0.8 (2) 0.4
0 0
40
80
120
160
200
AMBIENT TEMPERATURE Ta (C)
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RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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