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| Production Process TQPHT 0.5 um pHEMT Foundry Service Features Metal 2 Dielectric Metal 1 Dielectric MIM Metal Metal 2 - 4um Dielectric Metal 1 - 2um * * * * * Metal 1 NiCr Isolation Implant Isolation Implant Nitride N+ Pseudomorphic Channel Metal 0 pHEMT MIM Capacitor Semi-Insulating GaAs Substrate NiCr Resistor * * * * * * 0.5 um pHEMT Device Cross-Section D-Mode, -0.8 V Vp InGaAs Active Layer pHEMT Process 0.5 um Optical Lithography Gates 17 V D-G Breakdown Voltage High Density Interconnects: * 2 Global * 1 Local High-Q Passives Thin Film Resistors High Value Capacitors Backside Vias Optional Based on Production 0.25 m pHEMT and Passives Processes TOM3 FET Models Available General Description TriQuint's 0.5 m pHEMT process is based on our production released 0.25 m gate process. TQPHT substitutes lower cost optical lithography in place of e-beam and adds TriQuint's unique thick metal scheme. This process is targeted for high efficiency and linearity in power amplifiers, low noise amplifiers, and linear, low loss and high isolation RF switch applications. The TQPHT process offers a D-Mode pHEMT with a -0.8 V pinch off. The three metal interconnecting layers are encapsulated in a high performance dielectric that allows wiring flexibility, optimized die size and plastic packaging simplicity. Precision NiCr resistors and high value MIM capacitors are included allowing higher levels of integration, while maintaining smaller, cost -effective die sizes. Applications * * * * Highly Efficient and Linear Power Amplifiers Low Loss, High Isolation Switches for Wireless Transceivers and Basestations Higher Supply Voltage Applications Integrated RF Front Ends- LNA, SW, PA Fully Released Production Process Page 1 of 5; Rev 2.0 7/22/03 Production Process TQPHT 0.5 um pHEMT Foundry Service TQPHT Process Details Process Details @ Vds = 3.0V Element D-Mode pHEMT Parameter Vp (1uA/um) Idss Idh (Ig=1ua/um) Gm (50% Idss) Breakdown, Vds Ft @ 50% Idss Fmax @ 50% Idss Coff @Vds=0, Vgs= -2.5V Ron @ Idss Value -0.8 200 500 350 15 min 25 90 0.3 1.8 Units V mA/mm mA/mm mS/mm V GHz GHz pF/mm Ohm-mm Common Process Element Details Gate Length Interconnect MIM Caps Resistors Value NiCr Bulk Vias Mask Layers No Vias With Vias 0.5 3 630 50 285 Yes 12 14 -65 to +150 -55 to +150 17 20 Deg C Deg C V V m Metal Layers pF/mm2 Ohms/sq Ohms/sq Maximum Ratings Storage Temperature Range Operating Temperature Range Transistor (Vs open; Idg = 1uA/um) Capacitor TriQuint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124 Semiconductors for Communications www.triquint.com Page 2 of 5; Rev 2.0 7/22/03 Phone: 503-615-9000 Fax: 503-615-8905 Email: info@triquint.com Production Process TQPHT 0.5 um pHEMT Foundry Service S-Parameter Data: 300 um Device; Vds = 3.0V; 50% Idss S(2,2) S(1,1) S(2,1) S(1,2)/0.05 -10 -8 -6 -4 -2 0 2 4 6 8 10 f req (100.0MHz to 26.10GHz) f req (100.0MHz to 26.10GHz) Ft versus Vgs as a function of Vds: 300 um Device Ft versus Vgs 35 30 25 20 Ft 15 10 5 0 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 Vgs (Volts) Vds=1.5V Vds=3.0V TriQuint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124 Semiconductors for Communications www.triquint.com Page 3 of 5; Rev 2.0 7/22/03 Phone: 503-615-9000 Fax: 503-615-8905 Email: info@triquint.com Production Process TQPHT 0.5 um pHEMT Foundry Service Gmax versus Vgs and Frequency: 300 um Device Gm ax versus Vgs 26 24 22 Gmax (dB) 20 18 16 14 12 -0.6 F re q@ 2 .1G H z F re q@ 4 .1G H z F re q@ 6 .1G H z F re q@ 8 .1G H z F re q@ 10 .1G H z F re q@ 12 .1G H z -0.4 -0.2 0 Vgs (Volts) 0.2 0.4 0.6 I-V Characteristics: 300 um Device Ids versus Vgs 0.16 0.14 0.12 Ids (A) 0.1 0.08 0.06 0.04 0.02 0 0 1 2 3 4 5 6 7 8 9 Vds (Volts) Vgs=-0.8V Vgs=-0.6V Vgs=-0.4V Vgs=-0.2V Vgs=0V Vgs=0.2V Vgs=0.4V Vgs=0.6V TriQuint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124 Semiconductors for Communications www.triquint.com Page 4 of 5; Rev 2.0 7/22/03 Phone: 503-615-9000 Fax: 503-615-8905 Email: info@triquint.com Production Process TQPHT 0.5 um pHEMT Foundry Service Prototyping and Development Process Qualification Status * * * * * * Prototype Development Quick Turn (PDQ): * Shared mask set * Run monthly * Hot Lot cycle time Prototype Wafer Option (PWO): * Customer-specific masks; Customer schedule * 2 wafers delivered * Hot Lot cycle time * With thinning and sawing; optional backside vias Mature process based on TQTx, 150-mm process Process released to production Full 150mm wafer Process Qualification complete For more information on Quality and Reliability, contact TriQuint or visit: www.triquint.com/manufacturing/QR/ * * * * * * * * Complete Design Manual Now Device Library of circuit elements: FETs, diodes, thin film resistors, capacitors, inductors Design Kit for Agilent's ADS design environment Design Kit planned for AWR Microwave Office Layout Library in GSD II format Cadence Development Kit with PCells Layout Rule Sets for Design Rule Check Qualified package models for supported package styles Design Tool Status * * * * * * * * * Tiling of GDSII stream files including PCM Design Rule Check services Layout Versus Schematic check services Packaging Development Engineering Test Development Engineering: * On-wafer * Packaged parts Thermal Analysis Engineering Yield Enhancement Engineering Part Qualification Services Failure Analysis Applications Support Services * * GaAs Design Classes: * Half-Day Introduction; Upon request * Four-Day Technical Training; Fall and Spring at TriQuint Oregon facility For Training & PDQ Schedules, please visit: www.triquint.com/foundry/ Training * * * * * * * * * Mask making Production 150-mm wafer fab Wafer Thinning Wafer Sawing Substrate Vias DC Diesort Testing RF On-wafer testing Plastic Packaging RF Packaged Part Testing Manufacturing Services Please contact your local TriQuint Semiconductor Representative/ Distributor or Foundry Services Division for Additional information: E-mail: sales@triquint.com Phone: (503) 615-9000 Fax: (503) 615-8905 TriQuint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124 Semiconductors for Communications www.triquint.com Page 5 of 5; Rev 2.0 7/22/03 Phone: 503-615-9000 Fax: 503-615-8905 Email: info@triquint.com |
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