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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2706TP SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The PA2706TP, which has a heat spreader, is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management application of notebook computer. ORDERING INFORMATION PART NUMBER PACKAGE Power HSOP8 PA2706TP FEATURES * Low on-state resistance RDS(on)1 = 15 m MAX. (VGS = 10 V, ID = 5.5 A) RDS(on)2 = 22.5 m MAX. (VGS = 4.5 V, ID = 5.5 A) * Low Ciss: Ciss = 660 pF TYP. (VDS = 10 V, VGS = 0 V) * Small and surface mount package (Power HSOP8) ABSOLUTE MAXIMUM RATINGS (TA = 25C, Unless otherwise noted, all terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (DC) Note1 Note2 VDSS VGSS ID(DC)1 ID(DC)2 ID(pulse) PT1 PT2 Tch Tstg 30 20 20 11 44 15 3 150 -55 to +150 11 12.1 V V A A A W W C C A mJ Drain Current (pulse) Total Power Dissipation (TC = 25C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 Note1 IAS EAS Notes 1. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW = 10 sec 2. PW 10 s, Duty Cycle 1% 3. Starting Tch = 25C, VDD = 15 V, RG = 25 , L = 100 H, VGS = 20 0 V Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16621EJ1V0DS00 (1st edition) Date Published January 2004 NS CP(K) Printed in Japan 2003 PA2706TP ELECTRICAL CHARACTERISTICS (TA = 25C, All terminals are connected.) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note SYMBOL IDSS IGSS VGS(off) | yfs | Note TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 5.5 A VGS = 10 V, ID = 5.5 A VGS = 4.5 V, ID = 5.5 A VGS = 4.0 V, ID = 5.5 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 5.5 A VGS = 10 V RG = 10 MIN. TYP. MAX. 10 10 UNIT A A V S 1.5 4.5 11 16 19 660 270 83 9 5 29 6 2.5 Forward Transfer Admittance Drain to Source On-state Resistance RDS(on)1 RDS(on)2 RDS(on)3 15 22.5 29 m m m pF pF pF ns ns ns ns nC nC nC V ns nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 15 V VGS = 5.0 V ID = 11 A IF = 11 A, VGS = 0 V IF = 11 A, VGS = 0 V di/dt = 100 A/s 7.1 2.1 3.1 0.84 25 17 Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 0 V 50 TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG VGS RL VDD VDS 90% 90% 10% 10% VGS Wave Form 0 10% VGS 90% BVDSS IAS ID VDD VDS VGS 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 RL VDD 2 Data Sheet G16621EJ1V0DS PA2706TP TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 20 PT - Total Power Dissipation - W 15 10 5 0 0 25 50 75 100 125 150 175 TC - Case Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 ID(DC) ID(pulse) PW = 100 s ID - Drain Current - A 10 DC 1 ms 10 ms RDS(on) Limited (at VGS = 10 V) 1 Power Dissipation Limited 0.1 TC = 25C Single pulse 0.01 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W Rth(ch-A): Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, TA = 25C Rth(ch-C): TC = 25C Rth(ch-A) 100 10 Rth(ch-C) = 8.33C/W 1 0.1 100 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000 Data Sheet G16621EJ1V0DS 3 PA2706TP DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 50 45 ID - Drain Current - A VGS = 10 V 100 Pulsed ID - Drain Current - A 40 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 VDS - Drain to Source Voltage - V VDS = 10 V Pulsed TA = -55C 25C 75C 150C 4.5 V 4.0 V 10 1 0.1 0.01 0 1 2 3 4 5 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 3 VGS(off) - Gate Cut-off Voltage - V 100 VDS = 10 V Pulsed 10 TA = -55C 25C 75C 150C 2.5 2 1.5 1 0.5 0 -50 0 50 VDS = 10 V ID = 1 mA 1 100 150 0.1 0.01 0.1 1 10 100 Tch - Channel Temperature - C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - m 30 Pulsed 25 20 15 10 5 0 0.1 1 10 100 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 25 20 15 10 5 0 0 5 10 15 20 VGS - Gate to Source Voltage - V VGS = 4.0 V 4.5 V ID = 5.5 A 10 V 4 Data Sheet G16621EJ1V0DS PA2706TP DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m 40 35 30 25 20 15 10 5 0 -50 Ciss, Coss, Crss - Capacitance - pF Pulsed VGS = 4.0 V 1000 Ciss 4.5 V 10 V 100 Coss Crss VGS = 0 V f = 1 MHz 10 0.01 0.1 1 10 100 0 50 100 150 Tch - Channel Temperature - C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 30 6 VDD = 24 V 15 V 6V 5 4 VGS 3 2 VDS ID = 11 A 1 0 0 2 4 6 8 QG - Gate Charge - nC VGS - Gate to Source Voltage - V VDD = 15 V VGS = 10 V RG = 10 100 tf td(off) td(on) 25 20 15 10 5 0 10 tr 1 0.1 1 10 100 ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 trr - Reverse Recovery Time - ns 1000 Pulsed VGS = 0 V di/dt = 100 A/s 100 IF - Diode Forward Current - A 10 VGS = 10 V 0V 1 10 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V 1 1 10 IF - Diode Forward Current - A 100 Data Sheet G16621EJ1V0DS 5 PA2706TP SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 IAS - Single Avalanche Current - A Energy Derating Factor - % 120 VDD = 15 V RG = 25 VGS = 20 0 V Starting Tch = 25C 100 80 60 40 20 0 V DD = 15 V RG = 25 V GS = 20 0 V IAS 11 A 10 EAS = 12.1 mJ 1 0.00001 0.0001 0.001 0.01 25 50 75 100 125 150 L - Inductive Load - H Starting Tch - Starting Channel Temperature - C PACKAGE DRAWING (Unit: mm) Power HSOP8 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8, 9: Drain 1.49 0.21 1.44 TYP. 1 5.2 +0.17 -0.2 4 0.8 0.2 S +0.10 -0.05 6.0 0.3 4.4 0.15 0.05 0.05 0.15 1.27 TYP. 0.40 1 +0.10 -0.05 0.10 S 0.12 M 2.0 0.2 2.9 MAX. 9 4.1 MAX. 8 5 EQUIVALENT CIRCUIT Drain 1.1 0.2 4 Gate Body Diode Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional Gate Protection Diode protection circuit is externally required if a voltage exceeding the rated Source voltage may be applied to this device. 6 Data Sheet G16621EJ1V0DS PA2706TP * The information in this document is current as of January, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
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