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| VKM 60-01P1 HiPerFETTM Power MOSFET H-Bridge Topology in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family K 12 NTC ID25 = 75 A VDSS = 100 V RDSon = 25 m trr L4 L6 A1 L9 P 18 R 18 K 13 X 15 T 18 V 18 X 18 E10 F10 K10 Pin arangement see outlines < 200 ns Preliminary data sheet MOSFETs Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD Symbol Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Test Conditions Maximum Ratings 100 100 20 30 75 300 75 30 5 300 V V V V A A A mJ V/ns W Features * HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode * ECO-PAC 2 package - isolated back surface - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - solderable pins for PCB mounting Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 100 2.0 4 100 250 1 0.020 25 30 4500 1600 800 20 60 80 60 180 36 85 0.25 30 110 110 90 260 70 160 0.5 V V nA A mA S pF pF pF ns ns ns ns nC nC nC Applications * * * * drives and power supplies battery or fuel cell powered automotive, industrial vehicle etc. secondary side of mains power supplies VDSS VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS; TJ = 25C VGS = 0 V; TJ = 125C VGS = 10 V, ID = 0.5 ID25 Pulse test, t < 300 s, duty cycle d < 2% VDS = 10 V; ID = ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External) VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 with heatsink compound (0.42 K/m.K; 50 m) (c) 2002 IXYS All rights reserved 1-4 238 K/W K/W IXYS reserves the right to change limits, test conditions and dimensions. VKM 60-01P1 Source-Drain Diode Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 75 300 1.75 200 300 A A V ns ns Dimensions in mm (1 mm = 0.0394") Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive; IF = ID25, VGS = 0 V, Pulse test, t < 300 s, duty cycle d < 2% IF = 25 A, -di/dt = 100 A/s, TJ = 25C VR = 25 V TJ = 125C Temperature Sensor NTC Symbol R25 B25/50 Module Symbol TVJ Tstg VISOL Md a IISOL 1 mA; 50/60 Hz; t = 1 s mounting torque (M4) Max. allowable acceleration Conditions Maximum Ratings -40...+150 -40...+125 3600 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s2 Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K Symbol dS dA Weight Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated min. typ. Characteristic Values max. mm mm 24 g 11.2 11.2 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2002 IXYS All rights reserved 2-4 238 VKM 60-01P1 200 TJ = 25C VGS = 10V 9V 150 125 150 8V ID - Amperes 100 75 50 25 0 0 1 2 3 4 5 6 7 8 9 10 TJ = 125C 100 50 7V 6V 0 5V TJ = 25C 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VDS - Volts VGS - Volts Fig. 1 Output Characteristics 1,4 TJ = 25C Fig. 2 Input Admittance 2,50 2,25 1,3 RDS(on) - Normalized 2,00 1,75 1,50 ID = 37.5A 1,2 VGS = 10V 1,1 1,0 VGS = 15V 1,25 1,00 0,75 0,9 0,8 0 20 40 60 80 100 120 140 160 0,50 -50 -25 0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Fig. 3 RDS(on) vs. Drain Current 80 Fig. 4 Temperature Dependence of Drain to Source Resistance 1,2 60 BV/VG(th) - Normalized 1,1 1,0 0,9 0,8 0,7 0,6 VGS(th) BVDSS 40 20 0 -50 -25 0 25 50 75 100 125 150 0,5 -50 -25 0 25 50 75 100 125 150 TC - Degrees C TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature IXYS reserves the right to change limits, test conditions and dimensions. Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 3-4 238 (c) 2002 IXYS All rights reserved VKM 60-01P1 10 9 8 7 6 5 GS VDS = 50V ID = 37.5A IG = 1mA Limited by RDS(on) 10 1 100 ID - Amperes 1m 4 3 2 1 0 0 25 50 75 100 125 150 175 200 10 1 10 1 1 10 100 Gate Charge - nCoulombs VDS - Volts Fig.7 Gate Charge Characteristic Curve 6000 5000 150 125 Fig.8 Forward Bias Safe Operating Area 3000 2000 1000 0 0 5 f = 1MHz VDS = 25V Coss IS - Amperes 4000 Ciss 100 75 50 TJ = 125C 25 Crss TJ = 25C 0 10 15 20 25 0,00 0,25 0,50 0,75 1,00 1,25 1,50 VDS - Volts VSD - Volt Fig.9 Capacitance Curves Fig.10 Source Current vs. Source to Drain Voltage D=0.5 0,1 D=0.2 D=0.1 D=0.05 0,01 D=0.02 D=0.01 Single pulse 0,001 0,00001 0,0001 0,001 0,01 0,1 1 10 Time - Seconds Fig.11 Transient Thermal Impedance IXYS reserves the right to change limits, test conditions and dimensions. 238 (c) 2002 IXYS All rights reserved 4-4 |
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