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| VUO 60 Three Phase Rectifier Bridge IdAV = 72 A VRRM = 1200-1800 V VRSM V 1300 1500 1700 1900 VRRM V 1200 1400 1600 1800 Type ~ ~ ~ + + + ~ ~~ VUO 60-12NO3 VUO 60-14NO3 VUO 60-16NO3 VUO 60-18NO3* - -- * delivery time on request Symbol IdAV x IdAVM x IFSM Test Conditions TC = 85C, module module TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 72 75 600 650 540 600 1800 1770 1460 1510 -40...+125 125 -40...+125 A A A A A A A2s A2s As A2s C C C V~ V~ Nm lb.in. g 2 Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop 1/4" fast-on terminals UL registered E 72873 q q q q q q q I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT RthJC RthJH dS dA a 50/60 Hz, RMS IISOL 1 mA Mounting torque typ. Test Conditions VR = VRRM; VR = VRRM; IF = 150 A; TVJ = 25C TVJ = TVJM TVJ = 25C t = 1 min t=1s (M5) (10-32 UNF) Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Rectifier for DC motors field current q q q q 3000 3600 2-2.5 18-22 50 Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling q q q Dimensions in mm (1 mm = 0.0394") Characteristic Values 0.3 5 1.9 0.8 6.5 1.2 0.2 1.6 0.27 10 9.4 50 mA mA V V mW K/W K/W K/W K/W mm mm m/s2 Use output terminals in parallel connection! For power-loss calculations only per diode, DC current per module per diode, DC current per module Creep distance on surface Strike distance in air Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. x for resistive load at bridge output IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-2 VUO 60 80 A 70 IF 60 50 40 30 20 10 0 0.0 100 600 A 500 IFSM 400 104 A2s 50Hz, 80% VRRM VR = 0 V TVJ = 45C It 2 TVJ = 45C 300 103 TVJ = 125C TVJ=125C TVJ= 25C 200 TVJ = 125C 102 0.01 0.1 t s 1 1 2 3 4 5 6 7 ms10 89 t 0.5 1.0 VF V 1.5 0 0.001 Fig. 4 Forward current versus voltage drop per diode 250 W 200 Ptot 150 Fig. 5 Surge overload current Fig. 6 I2t versus time per diode 80 A 70 60 Id(AV)M 50 40 30 20 RthHA : 0.2 0.5 1.0 1.5 2.0 3.0 5.0 K/W K/W K/W K/W K/W K/W K/W 100 50 10 0 0 10 20 30 40 50 60 Id(AV)M 70 A 0 20 40 60 80 100 120 C Tamb 0 0 20 40 60 80 100 120 C TC Fig. 7 Power dissipation versus direct output current and ambient temperature 1.8 K/W 1.6 ZthJH Fig. 8 Max. forward current versus case temperature 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.001 Constants for ZthJH calculation: i 1 2 3 4 0.01 0.1 1 10 t s 100 Rthi (K/W) 0.883 0.098 0.202 0.417 ti (s) 0.102 0.103 0.492 0.62 Fig. 9 Transient thermal impedance junction to heatsink (c) 2000 IXYS All rights reserved 2-2 706 |
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