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| Composite Transistors XN4482 Silicon PNP epitaxial planer transistor Unit: mm For general amplification 0.650.15 6 0.95 2.8 -0.3 +0.2 +0.25 1.5 -0.05 0.650.15 1 2.9 -0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 5 2 0.95 4 3 1.1-0.1 q 2SB709+2SB710 0.40.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25C) Ratings -60 -50 -7 -100 -200 -60 -50 -5 -500 -1 300 150 -55 to +150 Unit V V V mA mA V V V mA A mW C C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: ON Internal Connection 6 5 4 Tr1 1 2 3 Tr2 0 to 0.05 0.1 to 0.3 0.8 0.16-0.06 +0.2 s Basic Part Number of Element +0.1 1.450.1 s Features 0.3 -0.05 0.5 -0.05 +0.1 +0.1 1 Composite Transistors XN4482 (Ta=25C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCB = -20V, IE = 0 VCE = -10V, IB = 0 VCE = -10V, IC = -2mA IC = -100mA, IB = -10mA VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz 160 - 0.3 80 2.7 min -60 -50 -7 - 0.1 -100 460 - 0.5 V MHz pF typ max Unit V V V A A s Electrical Characteristics q Tr1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance q Tr2 Parameter Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCB = -20V, IE = 0 VCE = -10V, IC = -150mA* VCE = -10V, IC = -500mA* IC = -300mA, IB = -30mA* IC = -300mA, IB = -30mA* VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz 85 40 - 0.35 -1.1 200 5 15 - 0.6 -1.5 V V MHz pF min -60 -50 -5 - 0.1 340 typ max Unit V V V A Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance * Pulse measurement Common characteristics chart PT -- Ta 500 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) 2 Composite Transistors Characteristics charts of Tr1 IC -- VCE -60 Ta=25C -50 IB=-300A XN4482 IC -- I B -60 VCE=-5V Ta=25C -50 -400 -350 IB -- VBE VCE= - 5V Ta=25C Collector current IC (mA) Collector current IC (mA) -40 -200A -30 -40 Base current IB (A) -250A -300 -250 -200 -150 -100 -50 -150A -30 -20 -100A -20 -10 -50A -10 0 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 0 0 -100 -200 -300 -400 0 0 -0.4 -0.8 -1.2 -1.6 Collector to emitter voltage VCE (V) Base current IB (A) Base to emitter voltage VBE (V) IC -- VBE -240 -10 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) VCE=-5V IC/IB=10 600 hFE -- IC VCE= -10V -200 25C Ta=75C -25C Forward current transfer ratio hFE -3 -1 -0.3 -0.1 -0.03 -0.01 Ta=75C 25C -25C 500 Collector current IC (mA) -160 400 Ta=75C 300 25C -25C 200 -120 -80 -40 100 -0.003 -0.001 -1 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 -300 -1000 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT -- IE 160 8 Cob -- VCB Collector output capacitance Cob (pF) f=1MHz IE=0 Ta=25C Transition frequency fT (MHz) 140 120 100 80 60 40 20 0 0.1 VCB=-10V Ta=25C 7 6 5 4 3 2 1 0 -1 0.3 1 3 10 30 100 -2 -3 -5 -10 -20-30 -50 -100 Emitter current IE (mA) Collector to base voltage VCB (V) 3 Composite Transistors Characteristics charts of Tr2 IC -- VCE -800 -700 IB=-10mA Ta=25C -800 -700 XN4482 IC -- I B -10 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) VCE=-10V Ta=25C IC/IB=10 -3 -1 -0.3 -0.1 -0.03 -0.01 25C -25C Collector current IC (mA) Collector current IC (mA) -600 -500 -400 -300 -200 -100 0 0 -4 -8 -9mA -8mA -7mA -6mA -5mA -4mA -3mA -2mA -1mA -600 -500 -400 -300 -200 -100 0 Ta=75C -0.003 -0.001 -1 -12 -16 -20 0 -2 -4 -6 -8 -10 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Base current IB (mA) Collector current IC (mA) VBE(sat) -- IC -100 IC/IB=10 300 hFE -- IC 240 VCE=-10V fT -- I E VCB=-10V Ta=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE Transition frequency fT (MHz) -30 -10 -3 25C -1 -0.3 -0.1 -0.03 -0.01 -1 Ta=-25C 75C 250 200 200 Ta=75C 25C 160 150 -25C 100 120 80 50 40 -3 -10 -30 -100 -300 -1000 0 -1 0 -3 -10 -30 -100 -300 -1000 1 2 3 5 10 20 30 50 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 24 Collector output capacitance Cob (pF) 20 f=1MHz IE=0 Ta=25C 16 12 8 4 0 -1 -2 -3 -5 -10 -20 -30 -50 -100 Collector to base voltage VCB (V) 4 |
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