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| Composite Transistors XN611FH Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 0.650.15 6 0.95 2.8 -0.3 +0.2 +0.25 1.5 -0.05 0.650.15 1 0.3 -0.05 2.9 -0.05 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 5 2 0.95 4 3 s Basic Part Number of Element q 1.1-0.1 UN111F+UN111H [Tr1] [Tr2] 0.40.2 s Absolute Maximum Ratings Parameter Collector to base voltage Tr1 Collector to emitter voltage Collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings -50 -50 -100 -50 -50 -100 300 150 -55 to +150 Unit V V mA V V mA mW C C 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2) 4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: 4S Internal Connection 6 5 4 Tr1 1 2 3 Tr2 0 to 0.05 0.1 to 0.3 0.8 0.16-0.06 +0.2 +0.1 1.450.1 s Features 0.5 -0.05 +0.1 +0.1 1 Composite Transistors XN611FH (Ta=25C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -6V, IC = 0 VCE = -10V, IC = -5mA IC = -10mA, IB = - 0.3mA VCC = -5V, VB = - 0.5V, RL = 1k VCC = -5V, VB = -2.5V, RL = 1k VCB = -10V, IE = 1mA, f = 200MHz -30% 80 4.7 0.47 +30% -4.9 - 0.2 30 - 0.25 V V V MHz k min -50 -50 - 0.1 - 0.5 -1.0 typ max Unit V V A A mA s Electrical Characteristics q Tr1 Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio q Tr2 Parameter Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -6V, IC = 0 VCE = -10V, IC = -5mA IC = -10mA, IB = - 0.3mA VCC = -5V, VB = - 0.5V, RL = 1k VCC = -5V, VB = -2.5V, RL = 1k VCB = -10V, IE = 1mA, f = 200MHz -30% 0.17 80 2.2 0.22 +30% 0.27 -4.9 - 0.2 30 - 0.25 V V V MHz k min -50 -50 - 0.1 - 0.5 - 0.5 typ max Unit V V A A mA Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio 2 Composite Transistors Common characteristics chart PT -- Ta 500 XN611FH Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of Tr1 IC -- VCE -240 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 160 hFE -- IC VCE=-10V -200 Collector current IC (mA) -160 IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -30 -10 -3 -1 Ta=75C -0.3 25C -0.1 -0.03 Forward current transfer ratio hFE 120 Ta=75C 25C 80 -25C -120 -0.5mA -80 -0.4mA -0.3mA -40 -0.2mA -0.1mA 0 -2 -4 -6 -8 -10 -12 40 -25C 0 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C VIN -- IO -100 -30 VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 3 Composite Transistors Characteristics charts of Tr2 IC -- VCE -120 XN611FH VCE(sat) -- IC -100 hFE -- IC IC/IB=10 240 VCE=-10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25C -100 Forward current transfer ratio hFE 200 Collector current IC (mA) -10 -80 IB=-0.5mA -0.4mA 160 Ta=75C 120 25C 80 -25C 40 -60 -0.3mA -40 -0.2mA -20 -0.1mA 0 0 -2 -4 -6 -8 -10 -12 -1 Ta=75C 25C -0.1 -25C -0.01 -1 -3 -10 -30 -100 -300 -1000 0 -0.1 -0.3 -1 -3 -10 -30 -100 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 VIN -- IO f=1MHz IE=0 Ta=25C -100 VO= -0.2V Ta=25C Collector output capacitance Cob (pF) 5 4 3 Input voltage VIN (V) -3 -10 -30 -100 -10 -1 2 -0.1 1 0 -1 Collector to base voltage VCB (V) -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Output current IO (mA) 4 |
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