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| NP-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.04 (max) NUltra High-Speed Switching NSOP-8 Package GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP132A0340SR is a P-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Low on-state resistance : Rds(on)=0.04(Vgs=-4.5V) : Rds(on)=0.06(Vgs=-2.5V) Ultra high-speed switching Operational Voltage : -4.5V High density mounting : SOP-8 Ta=25: PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -20 8 -7 -25 -7 2.5 150 -55~150 UNITS V V A A A W : : 11 Note: When implemented on a glass epoxy PCB 755 DC Characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage Note: Effective during pulse test. Ta=25: SYMBOL Idss Igss Vgs(off) Rds(on) Yfs Vf CONDITIONS Vds=-20V, Vgs=0V Vgs=8V, Vds=0V Id=-1mA, Vds=-10V Id=-4A, Vgs=-4.5V Id=-4A, Vgs=-2.5V Id=-4A, Vds=-10V If=-7A, Vgs=0V MIN TYP MAX -10 1 -0.5 0.03 0.045 13 -0.85 -1.1 -1.2 0.04 0.06 UNITS A A V S V Dynamic Characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=-10V, Vgs=0V f=1MHz MIN TYP 2000 1100 550 MAX Ta=25: UNITS pF pF pF Switching Characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=-5V, Id=-4A Vdd=-10V CONDITIONS MIN TYP 15 25 75 50 MAX Ta=25: UNITS ns ns ns ns 11 Thermal Characteristics PARAMETER Thermal Resistance (channel-ambience) SYMBOL Rth (ch-a) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 50 MAX UNITS C/W 756 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Pulse Test, Ta=25: DRAIN CURRENT vs. GATE-SOURCE VOLTAGE Pulse Test, Vds=-10V Drain Current:Id (A) Drain-Source Voltage:Vds (V) Drain Current:Id (A) Gate-Source Voltage:Vgs (V) DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE Pulse Test, Ta=25: DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulse Test, Ta=25: Drain-Source On-State Resistance :Rds (on) () Drain-Source On-State Resistance :Rds (on) () Gate-Source Voltage:Vgs (V) Drain Current:Id (A) DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE Pulse Test GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE Vds=-10V, Id=-1mA 11 Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V) Drain-Source On-State Resistance :Rds (on) () Ambient Temp.:Topr (:) Ambient Temp.:Topr (:) 757 CAPACITANCE vs. DRAIN-SOURCE VOLTAGE Vgs=0V, f=1MHz SWITCHING TIME vs. DRAIN CURRENT Vgs=-5V, Vdd -10V, PW=10sec. duty1% Switching Time:t (ns) Capacitance:C (pF) Drain-Source Voltage:Vds (V) Drain Current:Id (A) GATE-SOURCE VOLTAGE vs. GATE CHARGE Vds=-10V, Id=-7A REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE Pulse Test Gate-Source Voltage:Vgs (V) Reverse Drain Current:Id (A) Gate Charge:Qg (nc) Source-Drain Voltage:Vsd (V) STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH 11 Rth (ch-a)=50C/W, (Implemented on a glass epoxy PCB) Single Pulse Pulse Width:PW (sec) 758 |
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