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2SA1069 E000850 HTP20A60 AT88SC 23990 31DQ0312 12N50E 11001
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  Datasheet File OCR Text:
 This
report
presents
the
qual
ification
test
results-on-NE272
series.
2/8
1.Test --
Device
NE272 AI GaAs /In GaAs hetero-junction FEr
2.Qualification
A serres of
tests
Qual ification tests consists of following rierns
l)High 2)High
The The test test
temperature temperature
conditions parameters
DC Bias Reverse
and were
Test Bias
( HT pT ) Test
are before
( HT RBT )
shown and in after Table the 1. tests.
sample
size
measured
bk~t
Resu
lli
The l)High The
summary
of
qual
ification DC Bias
test Test has been
result
is
presented
in
Table
3-1,3-2.
Temperature followingfcondition
ID=10mA
adopted:
VDs=2V
The The The test test
T ch= 175C
results elapsed of all
are for
shown 5000
in hours
Table under are
3-1 the
and
Fig.1
(1)-Fig.1(8) condition. crilteria.
above the delta
changes
parameters
withjn
2)High The
temperature following
'4V results elapsed of all
DC Bias condition
Test has been adopted:
VGDS=.
T ch= 150C are for shown 5000 parameters in hours are Table under within 3-2 the and Fig.2(1)-F:jg.2(8). condition. criteria.
The The The
test test changes
above the delta
4.Conclusion From
t is
the
concluded
series
of
that:
qual
ification
test
results
described
above
l)There 2) There
is no degradation test. is no degradation test.
UP to 5000 hours at Tch=l75C UP to 5000 hours at Tch=lSOC
in High temperature in High temperature
DC bias
Reverse bias
NE272 is qua
fied
for
high
rei
iabi
ity
appl
ications.
3/g
Table 1
., Test Item and Test concLi1i.Q11
Table
2
Delta
Parameters
and
Cri~
Parameter
Test condition
Delta Criteria
loss
VDs=2V,
VGS=OV
+20%
20%
gm
Vos=2V,
10=10mA
+20%
20%
VGS(off)
Vos=2V,
10=100 11 A
+20%
---20%
IGSO
VGS=-
3V
-+-500nA ~~hichever
or 100% is greater
BVGDO
IGo=-10
11
A
+20%
20%
VGF
IG F=1 11 A
+20%
--20%
NF
Vos=2V, 10=10mA f=12GHZ
-t. O.2dB
O.2dB
Ga
+. O.5dB ---O.5dB


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