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| High Speed DMOS N-Channel Switch CORPORATION SD404 FEATURES DESCRIPTION The SD404 is an N-Channel Enhancement Mode device processed with Calogic's ultra high speed lateral DMOS technology. The SD404 is an excellent switch driver or analog switch. Its low threshold offers the designer an advantage in applying the benefits of low on resistance and high speed switching to low voltage circuits. ORDERING INFORMATION Part Package Temperature Range -55oC to +125oC -55oC to +125oC -55oC to +125oC SD404BD Plastic TO-92 Package SD404CY SOT-89 Surface Mount XSD404 Sorted Chips in Carriers * High Speed Switching. . . . . . . . . . . . . . . . . . . . . tr < 2ns * Low Capacitance . . . . . . . . . . . . . . . . . . crss 1.2pF typical Low on Resistance max * Very Threshold . . . . . . . .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .8. ohm 1.5V .. < * Low * CMOS and TTL Compatible Input * Available in Surface Mount Package Drivers * SwitchSwitches * Video * VHF/UHF Amplifiers APPLICATIONS PIN CONFIGURATION SCHEMATIC DIAGRAM TO-92 DRAIN (2) GATE (3) D SG CD3 SOURCE (1) G S (TAB) D SOT-89 PRODUCT MARKING TO-92 SOT-89 SD4040B SD404 SD404 CORPORATION ABSOLUTE MAXIMUM RATINGS (TA = +25oC unless otherwise noted) Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V +20V Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V +20V Source-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V Peak Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . +0.8A Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . 100mA Power Dissipation (at or below TA = +25oC) . . . . . . . . 300mW Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . 3.0mW/ oC Operating Junction and Storage Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC ELECTRICAL CHARACTERISTICS (TA = +25oC unless otherwise specified) SYMBOL STATIC BVDSS ID(OFF) IGSS ID(ON) VGS(th) VDS(ON) rDS(ON) VDS(ON) rDS(ON) DYNAMIC gfs ciss coss crss td(on) tr t(OFF) Common-Source Forward Transconductance Common-Source Input Capacitance Common-Source Output Capacitance Common-Source Reverse Transfer Capacitance Turn ON Delay Time Rise Time Turn OFF Time 100 12 6.0 1.2 1.0 1.0 1.0 18 8.0 2.0 1.5 2.0 ns VDD = 10V, RL = 390 VG(ON) = 10V, RG = 51 CL = 1.5pF pf VDS = 20V, VGS = 0 f = 1MHz mS ID = 0.3A VDS = 20V f = 1KHz (Note 1) Drain-Source Breakdown Voltage Drain-Source OFF Leakage Current Gate-Source Leakage Current Drain-Source ON Current Gate-Source Threshold Voltage Drain-Source ON Voltage Drain-Source ON Resistance Drain-Source ON Voltage Drain-Source ON Resistance 0.8 0.5 1.2 1.1 1.5 200 20 800 8.0 20 25 1.0 10 V A A A V mV ohms mV ohms ID = 1.0A, VGS =0 VDS = 15V, VGS = 0 VGS = 20V, VDS = 0 VDS = 10V, VGS = 10 V (Note 1) ID = 1.0A, VDS = VGS ID = 10mA VGS = 2.4V (Note 1) ID = 100mA VGS = 4.5V CHARACTERISTICS MIN TYP MAX UNIT TEST CONDITIONS Note 1: Pulse Test, 80Sec, 1% Duty Cycle SWITCHING TIMES TEST CIRCUIT VDD RL VOUT INPUT PULSE _ t r < 0.5 nSEC PULSE WIDTH - 100 nSEC SAMPLING OSCILLOSCOPE t r < 0.36 nSEC Rin > 1M C in < 2.0 pF TEST WAVEFORMS VG(on) V in 0 10% t d(on) t off t fall t d(off) 90% 90% VG 510 RG t on tr VDD Vout ~ 0V ~ 10% 90% 51 OSCILLOSCOPE 10% SD404 CORPORATION TYPICAL PERFORMANCE CHARACTERISTICS (TA = +25oC unless otherwise noted) FORWARD TRANSCONDUCTANCE -VSON DRAIN CURRENT 175 g fs -Forward Transconductance-(mmhos) CAPACITANCES -VSDRAIN-SOURCE VOLTAGE 20 VGS= 0 f = 1MHz c iss 12 8.0 4.0 c oss 150 125 100 75 50 25 Capacitance (pF) VDS = 20V f = 1KHz PULSE TEST 80Sec 1% Duty Cycle 16 c rss 0 5.0 10 15 20 25 VDS -Drain-Source Voltage (Volts) 0 50 100 150 200 250 300 350 10.0 6.0 4.0 2.0 1.0 0.6 0.4 0.2 0.1 0.06 I D -Drain Current-(mA) DRAIN-SOURCE ON RESISTANCE -VSGATE-SOURCE VOLTAGE 35 PULSE TEST 80 Sec 1% Duty Cycle I D(on) -ON Drain Current (Amps) ON DRAIN CURRENT -VSGATE-SOURCE VOLTAGE VDS = 10V PULSE TEST 80 Sec 1% Duty Cycle 30 r DS(on) ON Resistance (Ohms) TA = +25 C o 25 20 I D = 100mA 15 10 I D = 10mA 5.0 TA = +125 oC 0.04 0.02 I D'Z' 40mA 0 2.0 4.0 6.0 8.0 10 12 14 0.01 0 12 2.0 4.0 6.0 8.0 10 VGS -Gate-Source Voltage (Volts) 14 VGS-Gate- Source Voltage (Volts) |
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