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| ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A P-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package N-channel P-channel APPLICATIONS * DC - DC converters * Power management functions * Disconnect switches * Motor control ORDERING INFORMATION DEVICE ZXMD63C03XTA ZXMD63C03XTC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 12 embossed 12 embossed QUANTITY PER REEL 1,000 4,000 Pin-out DEVICE MARKING ZXM63C03 Top view ISSUE 1 - OCTOBER 2005 1 ZXMD63C03X ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V GS =4.5V; T A =25C)(b)(d) (V GS =4.5V; T A =70C)(b)(d) Pulsed Drain Current (c)(d) Continuous Source Current (Body Diode)(b)(d) Pulsed Source Current (Body Diode)(c)(d) Power Dissipation at T A =25C (a)(d) Linear Derating Factor Power Dissipation at T A =25C (a)(e) Linear Derating Factor Power Dissipation at T A =25C (b)(d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID I DM IS I SM PD PD PD T j :T stg 2.3 1.8 14 1.5 14 0.87 6.9 1.04 8.3 1.25 10 -55 to +150 N-CHANNEL 30 20 -2.0 -1.6 -9.6 -1.4 -9.6 P-CHANNEL -30 UNIT V V A A A A A W mW/C W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a)(d) Junction to Ambient (b)(d) Junction to Ambient (a)(e) SYMBOL R JA R JA R JA VALUE 143 100 120 UNIT C/W C/W C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. ISSUE 1 - OCTOBER 2005 2 ZXMD63C03X N-CHANNEL CHARACTERISTICS ISSUE 1 - OCTOBER 2005 3 ZXMD63C03X P-CHANNEL CHARACTERISTICS ISSUE 1 - OCTOBER 2005 4 ZXMD63C03X N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage V (BR)DSS I DSS I GSS V GS(th) 1.0 30 1 100 V A nA V 0.135 0.200 1.9 S I D =250A, V GS =0V V DS =30V, V GS =0V V GS = 20V, V DS =0V SYMBOL MIN. TYP. MAX. UNIT CONDITIONS I =250A, V DS = V GS D V GS =10V, I D =1.7A V GS =4.5V, I D =0.85A V DS =10V,I D =0.85A Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD t rr Q rr 16.9 9.5 t d(on) tr t d(off) tf Qg Q gs Q gd 2.5 4.1 9.6 4.4 C iss C oss C rss 290 70 20 g fs pF pF pF V DS =25 V, V GS =0V, f=1MHz ns ns ns ns 8 1.2 2 nC nC nC V DS =24V,V GS =10V, I D =1.7A (Refer to test circuit) V DD =15V, I D =1.7A R G =6.1, R D =8.7 (Refer to test circuit) 0.95 V T j =25C, I S =1.7A, V GS =0V T j =25C, I F =1.7A, di/dt= 100A/s Reverse Recovery Time (3) Reverse Recovery Charge(3) ns nC NOTES: (1) Measured under pulsed conditions. Width=300s. Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - OCTOBER 2005 5 ZXMD63C03X N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 1 - OCTOBER 2005 6 ZXMD63C03X N-CHANNEL CHARACTERISTICS ISSUE 1 - OCTOBER 2005 7 ZXMD63C03X P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge(3) V SD t rr Q rr 21.4 15.7 -0.95 V ns nC T j =25C, I S =-1.2A, V GS =0V T j =25C, I F =-1.2A, di/dt= 100A/s t d(on) tr t d(off) tf Qg Q gs Q gd 2.6 4.8 13.1 9.3 7 1.2 2 ns ns ns ns nC nC nC VDS=-24V,VGS=-10V, I D =-1.2A (Refer to test circuit) VDD =-15V, ID=-1.2A RG=6.2, RD=6.2 (Refer to test circuit) C iss C oss C rss 270 80 30 pF pF pF V DS =-25 V, V GS =0V, f=1MHz V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs 0.92 -1.0 0.185 0.27 -30 -1 100 V A nA V S I D =-250A, V GS =0V V DS =-30V, V GS =0V V GS = 20V, V DS =0V I =-250A, V DS =V GS D VGS=-10V, ID=-1.2A VGS=-4.5V, ID=-0.6A V DS =-10V,I D =-0.6A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS NOTES: (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - OCTOBER 2005 8 ZXMD63C03X P-CHANNEL CHARACTERISTICS ISSUE 1 - OCTOBER 2005 9 ZXMD63C03X P-CHANNEL TYPICAL CHARACTERISTICS A ISSUE 1 - OCTOBER 2005 10 ZXMD63C03X PACKAGE DIMENSIONS e c PAD LAYOUT DETAILS 1.02 0.040 E E1 4.8 0.189 R1 D L R A2 A mm inches 0.41 0.016 0.65 0.023 b A1 DIM Millimeters MIN MAX 1.11 0.20 0.36 0.18 3.05 MIN Inches MAX 0.044 0.008 0.014 0.007 0.120 A A1 B C D e e1 E H L 0.91 0.10 0.25 0.13 2.95 0.036 0.004 0.010 0.005 0.116 0.65NOM 0.33NOM 2.95 4.78 0.41 0 3.05 5.03 0.66 6 0.0256 0.0128 0.116 0.188 0.016 0 0.120 0.198 0.026 6 (c) Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - OCTOBER 2005 11 |
Price & Availability of ZXMD63C03XTC
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