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2SK3906 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II -MOS VI) 2SK3906 Switching Regulator Applications * * * * * * Small gate charge: Qg = 60 nC (typ.) Fast reverse recovery time: trr = 400 ns (typ.) Low drain-source ON-resistance: RDS (ON) = 0.27 (typ.) High forward transfer admittance: |Yfs| = 15S (typ.) Low leakage current: IDSS = 500 A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 20 80 150 792 20 15 150 -55~150 Unit V V V A W mJ A mJ C C 1. Gate 2. Drain(heat sink) 3. Source Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-65 2-16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50 Unit C/W C/W Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 3.46 mH, IAR = 20 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-08 2SK3906 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 20 A - Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton VGS 10 V 0V 4.7 VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V ID = 10 A, VGS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 10 A VDS = 10 V, ID = 10 A Min 30 600 2.0 7 Typ. 0.27 15 4250 10 420 12 45 10 80 60 50 10 Max 10 500 4.0 0.33 pF Unit A V A V V S ID = 10 A RL = 20 ns nC Duty < 1%, tw = 10 s = VDD 200 V - Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 20 A, VGS = 0 V IDR = 20 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 400 2.9 Max 20 80 -1.7 Unit A A V ns C Marking TOSHIBA K3906 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-08 2SK3906 ID - VDS 20 10 8 COMMON SOURCE Tc = 25C PULSE TEST 6.5 12 6 8 50 COMMON SOURCE Tc = 25C PULSE TEST ID - VDS 10 8 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 16 7 40 30 7 20 6.5 10 6 VGS = 5.5 V 5.5 4 VGS = 5 V 0 0 2 4 6 8 10 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ID - VGS 50 COMMON SOURCE 25 20 VDS - VGS DRAIN-SOURCE VOLTAGE VDS (V) COMMON SOURCE Tc = 25C PULSE TEST DRAIN CURRENT ID (A) 40 VDS = 20 V PULSE TEST 16 30 100 20 Tc = -55C 12 8 ID = 20 A 4 5 10 10 0 0 0 2 4 6 8 10 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V) Yfs - ID 100 COMMON SOURCE 1000 RDS (ON) - ID DRAIN-SOURCE ON -RESISTANCE RDS (ON) (m) COMMON SOURCE Tc = 25C PULSE TEST VGS = 10 V FORWARD TRANSFER ADMITTANCE Yfs (S) VDS = 20 V PULSE TEST 10 Tc = -55C 25 100 100 1 0.1 0.1 1 10 100 10 1 10 100 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3 2006-11-08 2SK3906 RDS (ON) - Tc 1000 IDR - VDS 100 800 DRAIN REVERSE CURRENT IDR (A) DRAIN-SOURCE ON-RESISTANCE RDS (ON) (m) COMMON SOURCE VGS = 10 V PULSE TEST COMMON SOURCE Tc = 25C PULSE TEST 10 600 ID = 20 A 10 200 5 400 10 1 5 3 1 0.1 0 -0.4 VGS = 0 V -0.8 -1.2 -1.6 -80 -40 0 40 80 120 160 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE VDS (V) C - VDS 10000 5 Vth - Tc Vth (V) GATE THRESHOLD VOLTAGE Ciss (pF) 4 1000 Coss 100 CAPACITANCE C 3 2 10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 1 Crss 1 0 -80 -40 0 40 80 120 160 DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (C) PD - Tc 200 450 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 20 PD (W) DRAIN-SOURCE VOLTAGE VDS (V) 16 VDD = 100 V 400 12 200 DRAIN POWER DISSIPATION 120 270 80 180 COMMON SOURCE VGS 90 ID = 20 A Tc = 25C PULSE TEST 0 0 60 8 40 4 0 0 40 80 120 160 200 20 40 80 0 100 CASE TEMPERATURE Tc (C) TOTAL GATE CHARGE Qg (nC) 4 2006-11-08 GATE-SOURCE VOLTAGE VGS 160 360 (V) VDS 2SK3906 rth - tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 PDM t T Duty = t/T Rth (ch-c) = 0.833C/W 100 1 10 100 1 10 0.01 0.001 10 PULSE WIDTH tw (s) SAFE OPERATING AREA 1000 1000 EAS - Tch AVALANCHE ENERGY EAS (mJ) 800 100 ID max (PULSE) * 100 s * ID max (CONTINUOUS) 1 ms * 10 600 DRAIN CURRENT ID (A) 400 200 DC OPERATION Tc=25 1 0 25 50 75 100 125 150 CHANNEL TEMPERATURE (INITIAL) Tch (C) 0.1 15 V VDSS max 0.01 1 10 100 1000 BVDSS IAR VDD VDS -15 V DRAIN-SOURCE VOLTAGE VDS (V) TEST CIRCUIT RG = 25 VDD = 90 V, L = 3.46 mH WAVEFORM AS = 1 B VDSS L I2 B 2 VDSS - VDD 5 2006-11-08 2SK3906 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-08 |
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