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| 2SK4037 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK4037 470 MHz Band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment * * * Output power: Po = 36.5dBmW (typ) Gain: Gp = 11.5dB (typ) Drain Efficiency: D = 60.0% (typ) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Gate-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS(Note 1) ID PD (Note 2) Tch Tstg Rating 12 3 3 20 150 -45~150 Unit V V A W C C JEDEC Note: JEITA Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-5N1A temperature, etc.) may cause this product to decrease in the Weight: 0.08 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Operating Ranges: 0~3V Note 2: Tc = 25C (When mounted on a 0.8 mm glass epoxy PCB) Marking Type Name UE Dot F ** Lot No. Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. 1 2007-11-01 2SK4037 Electrical Characteristics (Ta = 25C) Characteristics Output power Drain efficiency Power gain Threshold voltage Drain cut-off current Gate-source leakage current Symbol PO D Gp Vth IDSS IGSS (Note 3) Test Condition VDS = 6.0 V, Iidle = 250 mA (VGS = adjust) f = 470 MHz, Pi = 25dBmW ZG = ZL = 50 VDS = 6.0 V, ID = 0.5 mA VDS = 12 V, VGS = 0 V VGS = 3V, VDS = 0 V VDS = 6.0 V, f = 470 MHz, Pi = 25dBmW, Po = 36.5dBmW (VGS = adjust) VSWR LOAD 10:1 all phase Min 35.5 55.0 10.5 Typ. 36.5 60.0 11.5 1.0 Max 1.5 10 5 Unit dBmW % dB V A A Load mismatch No degradation Note 3: These characteristic values are measured using measurement tools specified by Toshiba. Test Circuit Pi ZG = 50 5 pF L1 27 pF 5 pF 5 pF 27 pF 10 F L2 16 pF 10000 pF 2200 pF 2200 pF Po ZL = 50 680 k VGS 10000 pF VDS L1: 0.6 mm enamel wire, 5.8ID, 8T L2: 0.6 mm enamel wire, 5.8ID, 8T Line: 2mm 2 2007-11-01 2SK4037 Po, Gp, D -Pi 40.0 Gp, D -Iidle 80 15 14 13 35.0 f =470MHz Iidle=250mA Vds=6V 70 f =470MHz Pi=25dBmW Vds=6V 70 66 OUTPUT POWER Po(dBmW) POWER GAIN Gp(dB) DRAIN EFFICIENCY D(%) 12 25.0 50 11 10 9 8 7 62 20.0 40 15.0 30 58 10.0 20 Po (dBmW) 5.0 54 Gp (dB) hD (%) 0.0 5.0 10.0 15.0 20.0 25.0 10 6 5 0 100 200 300 400 Gp (dB) hD (%) 50 500 0.0 0 30.0 INPUT POWER Pi(dBmW) GATE IDLE CURRENT Iidle(mA) Po-Pi 40.0 Pi-Ids 1800 1600 1400 f =470MHz Vds=6V f =470MHz Vds=6V 35.0 OUTPUT POWER Po(dBmW) 30.0 DRAIN CURRENT Ids(mA) 1200 1000 800 600 400 25.0 20.0 15.0 10.0 Iidle=50mA 5.0 Iidle=50mA 200 0 0.0 5.0 10.0 15.0 20.0 Iidle=250mA Iidle=500mA 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Iidle=250mA Iidle=500mA 25.0 30.0 0.0 INPUT POWER Pi(dBmW) INPUT POWER Pi(dBmW) Gp, D -Vds 15 Po-Pi 75 73 71 40 f =470MHz Iidle=250mA 14 Pi=25dBmW 13 12 f =470MHz Iidle=250mA 35 DRAIN EFFICIENCY D(%) 30 69 67 65 63 61 59 OUTPUT POWER Po(dBmW) POWER GAIN Gp(dB) 11 10 9 8 7 6 5 4.0 4.5 5.0 5.5 6.0 25 20 15 10 Vds=4.8V 5 Gp (dB) 57 hD (%) 6.5 7.0 55 Vds=5.2V Vds=6V 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 DRAIN VOLTAGE Vds(V) INPUT POWER Pi(dBmW) 3 2007-11-01 DRAIN EFFICIENCY D(%) 30.0 60 POWER GAIN Gp(dB) 2SK4037 Pi-Ids 1800 1600 1400 f =470MHz Iidle=200mA DRAIN CURRENT Ids(mA) 1200 1000 800 600 400 Vds=4.8V 200 0 0.0 5.0 10.0 15.0 20.0 Vds=5.2V Vds=6V 25.0 30.0 INPUT POWER Pi(dBmW) Note 4: These are only typical curves and devices are not necessarily guaranteed at these curves. 4 2007-11-01 2SK4037 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01 |
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