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| 7MBR100U2B060 IGBT MODULE (U series) 600V / 100A / PIM IGBT Modules Features * Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit Applications * Inverter for Motoe Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Symbol Condition Rating 600 20 100 200 100 200 378 600 20 50 100 187 600 800 100 700 2450 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 VCES VGES IC Collector current ICP -IC -IC pulse Collector power disspation PC Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector current IC ICP Collector power disspation PC Repetitive peak reverse voltage VRRM Repetitive peak reverse voltage VRRM Average output current IO Surge current (Non-Repetitive) IFSM I2t (Non-Repetitive) I2t Tj Operating junction temperature Tstg Storage temperature Isolation between terminal and copper base *2 Viso voltage between thermistor and others *3 Mounting screw torque Inverter Brake Converter Continuous 1ms 1ms 1 device Unit V V A A A W V V A A W V V A A A 2s C C V V N*m Continuous 1ms 1 device 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. IGBT Module Electrical characteristics (Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbol ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr ICES IGES VCE(sat) (terminal) VCE(sat) (chip) ton tr toff tf IRRM VFM IRRM R B Symbol Condition VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=100mA Tj=25C VGE=15V Tj=125C Ic=100A Tj=25C Tj=125C VGE=0V, VCE=10V, f=1MHz VCC=300V IC=100A VGE=15V RG=33 VGE=0V IF=100A Tj=25C Tj=125C Tj=25C Tj=125C Min. 7MBR100U2B060 Characteristics Typ. Max. 1.0 200 6.2 6.7 7.7 2.30 2.60 2.50 1.85 2.00 8.4 0.51 1.20 0.22 0.60 0.16 0.58 1.20 0.07 0.45 2.10 2.40 2.40 1.60 1.65 0.35 1.0 200 2.10 2.40 2.40 1.85 2.15 0.42 1.20 0.24 0.60 0.42 1.20 0.03 0.45 1.0 1.20 1.50 1.10 1.0 5000 465 495 520 3305 3375 3450 Characteristics Typ. Max. 0.33 0.67 0.67 0.47 0.05 Unit mA nA V V Inverter Input capacitance Turn-on time nF s Turn-off time Forward on voltage V Reverse recovery time Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake IF=100A VCE=600V, VGE=0V VCE=0V, VGE=20V Tj=25C IC=50A Tj=125C VGE=15V Tj=25C Tj=125C VCC=300V IC=50A VGE=15V RG=68 VR=600V IF=100A VGE=0V VR=800V T=25C T=100C T=25/50C Condition s mA nA V Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value s Converter terminal chip mA V mA K Unit Item Thermistor Thermal resistance Characteristics Min. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound Thermal resistance ( 1 device ) Rth(j-c) C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [Brake] 22(P1) [Inverter] [Thermistor] 8 20(Gu) 18(Gv) 16(Gw) 9 1(R) 2(S) 3(T) 7(B) 19(Eu) 4(U) 17(Ev) 5(V) 15(Ew) 6(W) 14(Gb) 13(Gx) 12(Gy) 11(Gz) 10(En) 23(N) 24(N1) IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip 250 VGE=20V 15V 12V 200 Collector current : Ic [A] 10 150 Collector current : Ic [A] 200 250 7MBR100U2B060 [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip VGE=20V 15V 12V 10V 150 100 100 8V 50 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 50 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 250 Tj=25C Tj=125C Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip 10 200 Collector current : Ic [A] 8 150 6 100 4 Ic=200A Ic=100A Ic= 50A 50 2 0 0 1 2 3 4 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 100.00 Collector-Emitter voltage : VCE [ V ] 500 [ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=100A, Tj= 25C 25 [V] Gate - Emitter voltage : VGE Capacitance : Cies, Coes, Cres [ nF ] 400 20 10.00 Cies 300 VGE 200 15 Coes 1.00 Cres 10 100 VCE 5 0.10 0 10 20 30 0 0 100 200 300 400 500 0 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=33, Tj= 25C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 7MBR100U2B060 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=33, Tj=125C 1000 toff ton tr tf 1000 toff tr 100 ton 100 tf 10 0 50 100 150 200 Collector current : Ic [ A ] 10 0 50 100 150 200 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=100A, VGE=15V, Tj= 25C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 10 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=33 8 Eon(125C) Eoff(125C) Eon(25C) 1000 toff ton 100 tr 6 tf 4 Eoff(25C) 2 Err(125C) Err(25 0 0 50 100 150 200 10 10 100 Gate resistance : Rg [ ] 1000 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=100A, VGE=15V, Tj= 125C 15 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon 10 Collector current : Ic [ A ] [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 33 ,Tj <= 125C 250 200 150 Eoff 5 100 50 Err 0 10 100 Gate resistance : Rg [ ] 1000 0 0 200 400 600 800 Collector - Emitter voltage : VCE [ V ] IGBT Module 7MBR100U2B060 Forward current vs. Forward on voltage (ty p.) chip 250 1000 Reverse recovery characteristics (ty p.) Vcc=300V, VGE=15V, Rg=33 200 Forward current : IF [ A ] 150 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] T j=25C T j=125C 100 trr (125C) Irr (125C) Irr (25C) 100 50 trr (25C) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Forward on volt age : VF [ V ] 10 0 50 100 150 200 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (ty p.) chip 250 200 Forward current : IF [ A ] 150 100 T j=125C 50 T j=25C 0 0.0 0.5 1.0 1.5 2.0 Forward on volt age : VFM [ V ] [ Thermistor ] Temp erature characteristic (ty p.) 100 Transient thermal resistance (max.) 10.000 Thermal resistanse : Rth(j-c) [ C/W ] 1.000 Resistance : R [ k ] FWD[Inverter], IGBT[Brake] 10 IGBT[Inverter] Conv.Diode 0.100 1 0.010 0.001 0.1 0.010 0.100 1.000 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Pulse width : Pw [ sec ] T emperat ure [C ] IGBT Module [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip 120 100 Collector current : Ic [A] 80 60 40 20 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 0 0 1 2 10V VGE=20V 15V 12V Collector current : Ic [A] 7MBR100U2B060 [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip 120 100 80 60 40 20 10V VGE=20V 15V 12V 8V 3 4 5 Collector-Emitter voltage : VCE [V] [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 120 100 Collector current : Ic [A] 80 60 40 20 0 0 1 2 3 4 Tj=25C Tj=125C Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip 10 8 6 4 Ic=100A Ic= 50A Ic= 25A 2 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 10.00 Collector-Emitter voltage : VCE [ V ] Capacitance : Cies, Coes, Cres [ nF ] Cies 500 [ Brake ] Dynamic Gate charge (typ.) Vcc=300V, Ic=50A, Tj= 25C 25 Gate - Emitter voltage : VGE [ V ] 400 20 1.00 Coes Cres 300 VGE 200 15 10 0.10 100 VCE 5 0.01 0 10 20 30 0 0 50 100 150 200 250 0 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] IGBT Module Outline Drawings, mm 7MBR100U2B060 |
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