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| AP2311GN Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Small Package Outline Surface Mount Device RoHS Compliant SOT-23 D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S G -60V 250m - 1.8A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating - 60 20 - 1.8 - 1.4 -10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit /W Data and specifications subject to change without notice 201227051-1/4 AP2311GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -60 -1 - Typ. -0.04 200 240 2 6 1 3 8 5 22 3 510 50 40 6.4 Max. Units 250 300 -3 -10 -25 100 10 810 9.6 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-1.8A VGS=-4.5V, ID=-1.4A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) o VDS=VGS, ID=-250uA VDS=-10V, ID=-1A VDS=-60V, VGS=0V VDS=-48V, VGS=0V VGS=20V ID=-1A VDS=-48V VGS=-4.5V VDS=-30V ID=-1A RG=3.3,VGS=-10V RD=30 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-1.2A, VGS=0V IS=-1A, VGS=0V, dI/dt=100A/s Min. - Typ. 30 38 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 270 /W when mounted on Min. copper pad. 2/4 AP2311GN 10 10 T A =25 C -ID , Drain Current (A) 7.5 o 5 V G = - 3 .0V -ID , Drain Current (A) -10V -7.0V -5.0V -4.5V T A = 150 o C 8 -10V -7.0V -5.0V -4.5V 5 V G = - 3 .0V 2.5 3 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 7 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 250 2.0 I D =-1.4A 240 T A =25 o C 1.6 I D =-1.8A V G =-10V 230 Normalized RDS(ON) RDS(ON) (m ) 1.2 220 0.8 210 200 2 4 6 8 10 0.4 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 2.0 -IS(A) T j =150 C 1.0 o T j =25 C o Normalized -VGS(th) (V) 1.2 1.4 1.5 1.3 1.0 0.5 0.8 0.0 0 0.2 0.4 0.6 0.8 1 0.5 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. 3/4 AP2311GN f=1.0MHz 12 1000 -VGS , Gate to Source Voltage (V) 10 I D = -1 A V DS = - 48 V C (pF) C iss 8 6 100 4 C oss C rss 2 0 10 0 2 4 6 8 10 12 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100.000 1 Duty factor=0.5 10.000 Normalized Thermal Response (Rthja) 0.2 100us 1.000 0.1 0.1 -ID (A) 0.05 PDM t 0.01 1ms 0.100 T Single Pulse 0.010 T A =25 o C Single Pulse 0.1 1 10 10ms 100ms 1s DC 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 270 /W 0.001 100 1000 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 10 V DS =-5V -ID , Drain Current (A) 8 VG T j =25 o C T j =150 o C QG -4.5V QGS QGD 6 4 2 Charge 0 0 1 2 3 4 5 6 Q -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit 4/4 |
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