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| PD -94917 IRG4IBC20UDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * 2.5kV, 60s insulation voltage * 4.8 mm creapage distance to heatsink * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes * Tighter parameter distribution * Industry standard Isolated TO-220 FullpakTM outline * Lead-Free C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A n-channel Benefits * Simplified assembly * Highest efficiency and power density * HEXFREDTM antiparallel Diode minimizes switching losses and EMI TO-220 FULLP AK Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM Visol VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to Case Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 11.4 6.0 52 52 6.5 52 2500 20 34 14 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A V W C Thermal Resistance Parameter RJC RJC RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, typical socket mount Weight Typ. --- --- --- 2.0 (0.07) Max. 3.7 5.1 65 --- Units C/W g (oz) www.irf.com 1 12/30/03 IRG4IBC20UDPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 --- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage --- 0.69 VCE(on) Collector-to-Emitter Saturation Voltage --- 1.85 --- 2.27 --- 1.87 Gate Threshold Voltage 3.0 --- VGE(th) VGE(th)/TJ Temperature Coeff. of Threshold Voltage --- -11 gfe Forward Transconductance 1.4 4.3 Zero Gate Voltage Collector Current --- --- ICES --- --- VFM Diode Forward Voltage Drop --- 1.4 --- 1.3 IGES Gate-to-Emitter Leakage Current --- --- Max. Units Conditions --- V VGE = 0V, IC = 250A --- V/C VGE = 0V, IC = 1.0mA 2.1 IC = 6.5A VGE = 15V --- V IC = 13A See Fig. 2, 5 --- IC = 6.5A, TJ = 150C 6.0 VCE = VGE, IC = 250A --- mV/C VCE = VGE, IC = 250A --- S VCE = 100V, IC = 6.5A 250 A VGE = 0V, VCE = 600V 1700 VGE = 0V, VCE = 600V, TJ = 150C 1.7 V IC = 8.0A See Fig. 13 1.6 IC = 8.0A, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M /dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. 27 4.5 10 39 15 93 110 0.16 0.13 0.29 38 17 100 220 0.49 7.5 530 39 7.4 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 41 IC = 6.5A 6.8 nC VCC = 400V See Fig. 8 16 VGE = 15V --- TJ = 25C --- ns IC = 6.5A, VCC = 480V 140 VGE = 15V, RG = 50 170 Energy losses include "tail" and --- diode reverse recovery. --- mJ See Fig. 9, 10, 11, 18 0.3 --- TJ = 150C, See Fig. 9, 10, 11, 18 --- ns IC = 6.5A, VCC = 480V --- VGE = 15V, RG = 50 --- Energy losses include "tail" and --- mJ diode reverse recovery. --- nH Measured 5mm from package --- VGE = 0V --- pF VCC = 30V See Fig. 7 --- = 1.0MHz 55 ns TJ = 25C See Fig. 90 TJ = 125C 14 IF = 8.0A 5.0 A TJ = 25C See Fig. 8.0 TJ = 125C 15 VR = 200V 138 nC TJ = 25C See Fig. 360 TJ = 125C 16 di/dt 200A/s --- A/s TJ = 25C See Fig. --- TJ = 125C 17 2 www.irf.com IRG4IBC20UDPBF 10.0 For both: 8.0 LOAD CURRENT (A) Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 9.5 W 6.0 Square wave: 60% of rated voltage 4.0 I 2.0 Ideal diodes 0.0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 TJ = 25C TJ = 150C 10 IC , Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) 10 TJ = 150C TJ = 25C 1 1 0.1 0.1 1 VGE = 15V 20s PULSE WIDTH 10 0.1 4 6 8 V CC = 10V 5s PULSE WIDTH A 10 12 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com A 3 IRG4IBC20UDPBF VCE , Collector-to-Emitter Voltage (V) 12 2.6 V GE = 15V 80s PULSE WIDTH IC = 13A Maximum DC Collector Current(A) 10 2.2 8 6 1.8 IC = 6.5A 4 1.4 I C = 3.3A 2 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 PDM t1 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4IBC20UDPBF 1000 VGE , Gate-to-Emitter Voltage (V) A C, Capacitance (pF) 800 Cies V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 VCE = 400V I C = 6.5A 16 600 12 Coes 400 8 200 Cres 4 0 1 10 0 0 5 10 15 20 25 A 30 100 VCE, Collector-to-Emitter Voltage (V) Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.32 Total Switching Losses (mJ) 0.31 Total Switching Losses (mJ) VCC VGE TJ IC = 480V = 15V = 25C = 6.5A 10 R G = 50 V GE = 15V V CC = 480V IC = 13A 1 IC = 6.5A I C = 3.3A 0.30 0.29 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 R G , Gate Resistance ( ) TJ , Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4IBC20UDPBF 1.2 Total Switching Losses (mJ) 0.9 I C , Collector Current (A) RG TJ V CC V GE = 50 = 150C = 480V = 15V 100 VGE = 20V T J = 125 oC 10 0.6 1 0.3 0.0 0 2 4 6 8 10 12 A 0.1 SAFE OPERATING AREA 1 10 100 1000 14 IC , Collector-to-Emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) 10 TJ = 150C TJ = 125C TJ = 25C 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Forward Voltage Drop - V FM (V) 6 www.irf.com IRG4IBC20UDPBF 100 100 VR = 200V TJ = 125C TJ = 25C 80 VR = 200V TJ = 125C TJ = 25C IF = 16A t rr - (ns) 60 I F = 8.0A I IRRM - (A) 10 I F = 16A IF = 8.0A I F = 4.0A 40 I F = 4.0A 20 0 100 di f /dt - (A/s) 1000 1 100 di f /dt - (A/s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 500 Fig. 15 - Typical Recovery Current vs. dif/dt 10000 VR = 200V TJ = 125C TJ = 25C 400 VR = 200V TJ = 125C TJ = 25C 300 di(rec)M/dt - (A/s) Q RR - (nC) I F = 16A 200 1000 IF = 4.0A IF = 8.0A I F = 16A I F = 8.0A 100 IF = 4.0A 0 100 di f /dt - (A/s) 1000 100 100 di f /dt - (A/s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4IBC20UDPBF Same type device as D.U.T. 90% Vge 10% 90% 80% of Vce 430F D.U.T. V C td(off) 10% IC 5% t d(on) tr Eon tf t=5s Eoff Ets = (E +Eoff ) on Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg Ic trr Qrr = trr id dt tx tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk 10% Irr Vcc Vpk Irr Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4 Erec = Vd id dt t3 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4IBC20UDPBF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000F 100V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4IBC20UDPBF Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG = 50 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. t = 60s, f = 60Hz TO-220 Full-Pak Package Outline TO-220 Full-Pak Part Marking Information E XA M P LE : TH IS IS A N IR F I8 4 0 G W ITH A S S EM B L Y L O T C O D E 3 43 2 A S S E M B LE D O N W W 2 4 1 9 9 9 IN TH E A S SE M B L Y LIN E "K " IN TE R N A TIO N A L R EC TIFIE R LO G O A SS EM B LY LO T C O D E P A RT N U M B ER IR FI8 40 G 9 2 4K 34 32 Note: "P" in assembly line position indicates "Lead-Free" D A TE C O D E YEA R 9 = 1 9 9 9 W E EK 2 4 L IN E K Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/03 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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