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| PD -95557 IRG4PC30KDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE tsc =10s, @360V VCE (start), T J = 125C, VGE = 15V Combines low conduction losses with high switching speed Tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes Lead-Free Short Circuit Rated UltraFast IGBT C High short circuit rating optimized for motor control, Features VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-channel Latest generation 4 IGBTs offer highest power density motor controls possible HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses This part replaces the IRGBC30KD2 and IRGBC30MD2 products For hints see design tip 97003 Benefits TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM tsc VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 28 16 58 58 12 58 10 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm) Units V A s V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. Typ. 0.24 6 (0.21) Max. 1.2 2.5 40 Units C/W g (oz) www.irf.com 1 7/26/04 IRG4PC30KDPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage 600 V Temperature Coeff. of Breakdown Voltage 0.54 V/C Collector-to-Emitter Saturation Voltage 2.21 2.7 2.88 V 2.36 Gate Threshold Voltage 3.0 6.0 Temperature Coeff. of Threshold Voltage -12 mV/C Forward Transconductance 5.4 8.1 S Zero Gate Voltage Collector Current 250 A 2500 Diode Forward Voltage Drop 1.4 1.7 V 1.3 1.6 Gate-to-Emitter Leakage Current 100 nA Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1.0mA IC = 16A VGE = 15V See Fig. 2, 5 IC = 28A IC = 16A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 16A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 12A See Fig. 13 IC = 12A, TJ = 150C VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc t d(on) tr td(off) tf Eon Eoff Ets tsc t d(on) tr t d(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. 10 Typ. Max. Units Conditions 67 100 IC = 16A 11 16 nC VCC = 400V See Fig.8 25 37 VGE = 15V 60 42 TJ = 25C ns 160 250 IC = 16A, VCC = 480V 80 120 VGE = 15V, RG = 23 0.60 Energy losses include "tail" 0.58 mJ and diode reverse recovery 1.18 1.6 See Fig. 9,10,14 s VCC = 360V, TJ = 125C VGE = 15V, RG = 10 , VCPK < 500V 58 TJ = 150C, See Fig. 11,14 42 IC = 16A, VCC = 480V ns 210 VGE = 15V, RG = 23, 160 Energy losses include "tail" 1.69 mJ and diode reverse recovery 13 nH Measured 5mm from package 920 VGE = 0V 110 pF VCC = 30V See Fig. 7 27 = 1.0MHz 42 60 ns TJ = 25C See Fig. 80 120 TJ = 125C 14 IF = 12A 3.5 6.0 A TJ = 25C See Fig. 5.6 10 TJ = 125C 15 VR = 200V 80 180 nC TJ = 25C See Fig. 220 600 TJ = 125C 16 di/dt = 200As 180 A/s TJ = 25C See Fig. 160 TJ = 125C 17 2 www.irf.com IRG4PC30KDPBF 18 16 14 12 10 8 6 4 Ideal diodes For both: LOAD CURRENT (A) Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 24 W Square wave: 60% of rated voltage I 2 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) TJ = 150 o C 10 I C , Collector-to-Emitter Current (A) TJ = 25 o C TJ = 150 o C 10 TJ = 25 oC 1 1 0.1 V GE = 15V 20s PULSE WIDTH 1 10 0.1 V CC = 50V 5s PULSE WIDTH 5 10 15 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PC30KDPBF 30 4.0 25 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 32 A Maximum DC Collector Current(A) 20 3.0 15 IC = 16 A 2.0 10 IC = 8.0A 8A 5 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) , Junction Temperature ( C) TTJ Junction Temperature ( C) J, Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC30KDPBF 1500 1200 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 16A 16 C, Capacitance (pF) 900 Cies 12 600 8 300 Coes Cres 4 0 1 10 0 VCE , Collector-to-Emitter Voltage (V) 0 20 40 60 80 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.50 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C 1.40 I C = 16A 10 RG = Ohm 23 VGE = 15V VCC = 480V IC = 32 A 1.30 IC = 16 A 1 IC = 8.0A 8A 1.20 1.10 1.00 0 R Gate Resistance ) RG G, ,Gate Resistance ((Ohm) 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PC30KDPBF 5.0 3.0 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC 4.0 VGE = 23 Ohm = 150 C = 480V = 15V 100 VGE = 20V 125C T J = 125 oC 10 2.0 1.0 0.0 0 8 16 24 32 40 1 SAFE OPERATING AREA 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) TJ = 150C 10 TJ = 125C TJ = 25C 1 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PC30KDPBF 160 100 VR = 200V TJ = 125C TJ = 25C 120 VR = 200V TJ = 125C TJ = 25C I F = 24A I F = 12A 80 I IRRM - (A) I F = 24A 10 t rr - (ns) I F = 12A IF = 6.0A I F = 6.0A 40 0 100 di f /dt - (A/s) 1000 1 100 di f /dt - (A/s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 600 Fig. 15 - Typical Recovery Current vs. dif/dt 10000 VR = 200V TJ = 125C TJ = 25C VR = 200V TJ = 125C TJ = 25C 400 di(rec)M/dt - (A/s) 1000 Q RR - (nC) IF = 6.0A I F = 24A 200 I F = 12A I F = 12A 100 IF = 6.0A IF = 24A 0 100 di f /dt - (A/s) 1000 10 100 di f /dt - (A/s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4PC30KDPBF Same type device as D.U.T. 90% Vge +Vge Vce 80% of Vce 430F D.U.T. Ic 10% Vce 90% Ic Ic 5% Ic td(off) tf Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Eoff = t1+5S Vce Ic Vceic dtdt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg Ic trr Qrr = trr id dt Ic dt tx tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk 10% Irr Vcc Vpk Irr Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Vce Ic Eon = Vce ie dtdt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4 Erec = Vd idIc dt Vd dt t3 t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4PC30KDPBF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000F 100V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4PC30KDPBF Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG= 23 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT ERNATIONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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