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| MIG100J7CSB1W MITSUBISHI SEMICONDUCTOR MIG100J7CSB1W (600V/100A 7in1) High Power Switching Applications Motor Control Applications * * * * * * Integrates inverter, brake power circuit and control circuits (IGBT drive units, and units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. The electrodes are isolated from the case Low thermal resistance VCE (sat) = 1.9 V (typ.) UL recognized: File No.E87989 Weight: 278 g (typ.) Equivalent Circuit 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 FO IN VD GND FO IN VD GND FO IN VD GND FO IN VD GND GND IN FO VD GND IN FO VD GND IN FO VD GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT W 1. 8. 15. VD (U) GND (V) Open 2. 9. 16. V FO (U) VD (W) IN (B) 3. 10. 17. IN (U) FO (W) IN (X) U 4. 11. 18. GND (U) IN (W) IN (Y) B 5. 12. 19. VD (V) GND (W) IN (Z) 6. 13. 20. FO (V) VD (L) GND (L) N 7. 14. IN (V) FO (L) P 2004-10-01 1/10 MIG100J7CSB1W Package Dimensions Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) IN (B) 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 2004-10-01 2/10 MIG100J7CSB1W Signal Terminal Layout Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) IN (B) 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 2004-10-01 3/10 MIG100J7CSB1W Maximum Ratings (Tj = 25C) Stage Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Supply voltage Collector-emitter voltage Collector current Brake Reverse voltage Forward current Collector power dissipation Junction temperature Control supply voltage Control Input voltage Fault output voltage Fault output current Operating temperature Storage temperature Range Module Isolation voltage Screw torque (Terminal) Screw torque (Mounting) AC 1 min M4 M5 Tc = 25C, DC Tc = 25C, DC VD-GND Terminal IN-GND Terminal FO-GND Terminal FO sink current Tc = 25C, DC Tc = 25C, DC Tc = 25C, DC Tc = 25C, DC P-N Power terminal Characteristic Condition P-N Power terminal Symbol VCC VCES IC IF PC Tj VCC VCES IC VR IF PC Tj VD VIN VFO IFO Tc Tstg VISO Rating 450 600 100 100 590 150 450 600 50 600 50 340 150 20 20 20 14 -20~ + 100 -40~ + 125 2500 2 3 Unit V V A A W C V V A V A W C V V V mA C C V Nm Electrical Characteristics 1. Inverter stage Characteristics Collector cut-off current Symbol ICEX Test Condition VCE = 600 V VD = 15 V IC = 100 A VIN = 15 V 0 V Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1.6 VCC = 300 V, IC = 100 A VD = 15 V, VIN = 15 V 0 V Tj = 25C, Inductive load (Note 1) Typ. 1.9 2.1 2.1 1.3 0.3 0.2 1.1 0.2 Max 1 10 2.3 2.5 2.2 2.1 s V V Unit mA Collector-emitter saturation voltage Forward voltage VCE (sat) VF ton tc (on) IF = 100 A, Tj = 25C Switching time trr toff tc (off) Note 1: Switching time test circuit & timing chart 2004-10-01 4/10 MIG100J7CSB1W 2. Brake stage Characteristics Collector cut-off current Symbol ICEX Test Condition VCE = 600 V VD = 15 V IC = 50 A VIN = 15 V 0 V VR = 600 V IF = 50 A, Tj = 25C VCC = 300 V, IC = 50 A VD = 15 V, VIN = 15 V 0 V Tj = 25C, Inductive load (Note 1) Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1.5 Typ. 1.8 2.0 1.9 1.3 0.65 0.8 1.1 0.2 Max 1 10 2.2 1 10 2.3 1.8 2.1 s V V Unit mA Collector-emitter saturation voltage VCE (sat) Reverse current Forward voltage IR VF ton tc (on) mA Switching time trr toff tc (off) Note 1: Switching time test circuit & timing chart 3. Control stage (Tj = 25C) Characteristics Control circuit current Input on signal voltage Input off signal voltage Protection Fault output current Normal Over current protection trip level Inverter Brake SC toff (OC) Trip level Reset level Trip level Reset level OT OTr UV UVr tFO VD = 15 V High side Low side Symbol ID (H) ID (L) VIN (on) VIN (off) IFO (on) IFO (off) OC VD = 15 V Test Condition Min 1.4 2.2 160 80 160 80 110 11.0 12.0 1 Typ. 13 52 1.6 2.5 10 5 118 98 12.0 12.5 2 Max 17 68 1.8 2.8 12 mA 0.1 125 12.5 V 13.0 3 ms A V Unit mA VD = 15 V VD = 15 V VD = 15 V, Tj < 125C = VD = 15 V, Tj < 125C = VD = 15 V Case temperature Short circuit protection trip Inverter level Brake Over current cut-off time Over temperature protection Control supply under voltage protection Fault output pulse width A s C 4. Thermal resistance (Tc = 25C) Characteristics Symbol Test Condition Inverter IGBT Junction to case thermal resistance Rth (j-c) Inverter FRD Brake IGBT Brake FRD Case to fin thermal resistance Rth (c-f) Compound is applied Min Typ. 0.017 Max 0.210 0.313 0.360 0.600 C/W C/W Unit 2004-10-01 5/10 MIG100J7CSB1W Switching Time Test Circuit Intelligent power module TLP559 (IGM) VD 0.1 F 15 k OUT IN 15 V 10 F GND VS P GND U (V, W, B) VCC VD IF = 16mA PG 15 V 10 F GND 0.1 F 15 k OUT IN VS N GND Timing Chart Input pulse 15 V VIN Waveform 0 2.5 V 1.6 V 90% Irr IC Waveform Irr 90% trr 20% Irr VCE Waveform 10% toff 10% tc (off) 10% ton 10% tc (on) 2004-10-01 6/10 MIG100J7CSB1W 5. Recommended conditions for application Characteristics Supply voltage Control supply voltage Carrier frequency Dead time Symbol VCC VD fc tdead Test Condition P-N Power terminal VD-GND Signal terminal PWM Control Switching time test circuit (See page.6) (Note 2) Min 13.5 3 Typ. 300 15 Max 400 16.5 20 Unit V V kHz s Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead 2004-10-01 7/10 MIG100J7CSB1W IC - VCE 200 VD = 17 V 13 V 200 IC - VCE VD = 17 V 13 V (A) 150 15 V (A) IC 150 15 V 100 Collector current IC 100 Collector current 50 Common emitter Tj = 25C 0 0 1 2 3 4 50 Common emitter Tj = 125C 0 0 1 2 3 4 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Switching time - IC 10 5 3 10 5 3 Switching time - IC ton toff (s) (s) ton 1 0.5 0.3 tc (on) tc (off) 0.1 0.05 0.03 Tj = 25C VCC = 300 V VD = 15 V L-Load 20 40 60 80 100 120 toff 1 0.5 0.3 Switching time Switching time tc (on) tc (off) 0.1 0.05 0.03 Tj = 125C VCC = 300 V VD = 15 V L-Load 20 40 60 80 100 120 0.01 0 0.01 0 Collector current IC (A) Collector current IC (A) IF - VF 200 100 trr, Irr - IF Peak reverse recovery current Irr (A) Reverse recovery time trr (x10ns) Irr 30 (A) Forward current IF 150 trr 10 100 50 Common cathode :Tj = 25C :Tj = 125C 0 0 1 2 3 4 3 Common cathode :Tj = 25C :Tj=125C 1 0 20 40 60 80 100 120 Forward voltage VF (V) Forward current IF (A) 2004-10-01 8/10 MIG100J7CSB1W OC - TC (mA) 300 30 ID (H) - fc Over current protection trip level OC (A) Inverter stage 150 Brake stage 100 High side control circuit current 200 ID (H) 250 25 20 15 10 50 VD = 15 V 0 0 25 50 75 100 125 150 5 VD = 15 V Tj = 25C 0 0 5 10 15 20 25 Case temperature TC (C) Carrier frequency fc (kHz) ID (L) - fc (mA) 100 180 160 Reverse bias SOA OC ID (L) IC (A) Collector current 80 140 120 100 80 60 40 20 0 0 Tj < 125C = VD = 15 V 100 200 300 400 500 600 700 Low side control circuit current 60 40 20 VD = 15 V Tj = 25C 0 0 5 10 15 20 25 Carrier frequency fc (kHz) Collector-emitter voltage VCE (V) Rth (t) - tw Inverter stage (C/W) Tc = 25C Diode stage Rth (t) - tw Brake stage (C/W) 1 0.5 0.3 Transistor stage 0.1 0.05 0.03 Tc = 25C Diode stage 1 0.5 0.3 Rth (t) 0.1 0.05 0.03 Transistor stage Transient thermal resistance 0.01 0.005 0.003 Transient thermal resistance 0.01 0.1 1 Rth (t) 0.01 0.005 0.003 0.001 0.001 10 0.001 0.001 0.01 0.1 1 10 Pulse width tw (s) Pulse width tw (s) 2004-10-01 9/10 MIG100J7CSB1W Turn on loss - IC 10 5 3 10 5 3 Turn off loss - IC (mJ) 1 0.5 0.3 (mJ) 1 0.5 0.3 Eon Turn on loss 0.1 0.05 0.03 Turn off loss Eoff VCC = 300 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 20 40 60 80 100 120 0.1 0.05 0.03 VCC = 300 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 20 40 60 80 100 120 0.01 0 0.01 0 Collector current IC (A) Collector current IC (A) 2004-10-01 10/10 |
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