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Ordering number : EN8622
2SK3093LS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK3093LS
Features
* * * *
General-Purpose Switching Device Applications
Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 400 30 3 12 2.0 20 150 --55 to +150 51.4 3 Unit V V A A W W C C mJ A
*1 VDD=50V, L=10mH, IAV=3A *2 L10mH, single pulse
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Conditions ID=1mA, VGS=0V VDS=320V, VGS=0V VGS= 30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=15V Ratings min 400 1.0 100 3.0 0.7 1.4 1.8 2.3 4.0 typ max Unit V
mA nA
V S
Marking : K3093
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0806QB SY IM TC-00000312 No.8622-1/3
2SK3093LS
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=3A IS=3A, VGS=0V Ratings min typ 360 90 45 10 10 28 17 10 0.85 1.2 max Unit pF pF pF ns ns ns ns nC V
Note : Be careful in handling the 2SK3093LS because it has no protection diode between gate and source.
Package Dimensions
unit : mm (typ) 7509-002
10.0 3.2 4.5 2.8
3.5
7.2 16.0
16.1
0.9 1.2 0.75
3.6
1.2
14.0
0.7
123
2.4
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS)
2.55
2.55
Switching Time Test Circuit
VDD=200V
0.6
Avalanche Resistance Test Circuit
L DUT
50
VGS=15V
D
PW=10s D.C.0.5%
ID=1.5A RL=133 VOUT
15V 0V
50
VDD
G
P.G
RGS 50
S
2SK3093LS
No.8622-2/3
2SK3093LS
3 2 10 7 5
ASO
10 s
s
Allowable Power Dissipation, PD -- W
2.5
PD -- Ta
IDP=12A
<10s
10
Drain Current, ID -- A
3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01
ID=3A
0
2.0
1m s 10 10 ms 0m DC s op era tio Operation in this n area is limited by RDS(on).
1.5
1.0
0.5
Tc=25C Single pulse
2 3 5 7 10 2 3 5 7 100 2 3 5 7
0 0 20 40 60 80 100 120 140 160 IT11692 120
1.0
Drain-to-Source Voltage, VDS -- V
25
Ambient Temperature, Ta -- C
IT11693
PD -- Tc
EAS -- Ta
Allowable Power Dissipation, PD -- W
Avalanche Energy derating factor -- %
0 20 40 60 80 100 120 140 160
20
100
80
15
60
10
40
5
20
0
0 0 25 50 75 100 125 150 175 IT10478
Case Temperature, Tc -- C
IT11694
Ambient Temperature, Ta -- C
Note on usage : Since the 2SK3093LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice.
PS No.8622-3/3

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