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| HMC-ALH376 v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz Features Noise Figure: 2 dB Gain: 16 dB @ 40 GHz P1dB Output Power: +6 dBm Supply Voltage: +4V @ 87 mA Die Size: 2.7 x 1.44 x 0.1 mm Typical Applications This HMC-ALH376 is ideal for: * Point-to-Point Radios * Point-to-Multi-Point Radios AMPLIFIERS - LOW NOISE - CHIP * Test Equipment & Sensors * Military & Space Functional Diagram General Description The HMC-ALH376 is a GaAs MMIC HEMT three stages, self-biased Low Noise Amplifier die which operates between 35 and 45 GHz. The amplifier provides 16 dB of gain, a 2 dB noise figure and +6 dBm of output power at 1 dB gain compression while requiring only 87 mA from a single +4V supply. This self-biased LNA is ideal for integration into hybrid assemblies or Multi-Chip-Modules (MCMs) due to its small size (3.9 mm2). Electrical Specifi cations*, TA = +25 C, Vdd= +4V Parameter Frequency Range Gain Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression Supply Current (Idd) (Vdd= +4V) *Unless otherwise indicated, all measurements are from probed die 15 Min. Typ. 35 - 40 16 2 10 16 6 87 3 10 Max. Min. Typ. 40 - 45 12 2.2 17 18 6 87 3 Max. Units GHz dB dB dB dB dBm mA 0 - 34 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH376 v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz Linear Gain vs. Frequency Noise Figure vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency Note: Measured Performance Characteristics (Typical Performance at 25C) Vd= 4V, Id = 87 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 0 - 35 AMPLIFIERS - LOW NOISE - CHIP HMC-ALH376 v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz Absolute Maximum Ratings Drain Bias Voltage RF Input Power (35 - 40 GHz) RF Input Power (40 - 45 GHz) Channel Temperature +5.5 Vdc -5 dBm -1 dBm 180 C -65 to +150 C -55 to +85 C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS AMPLIFIERS - LOW NOISE - CHIP Storage Temperature Operating Temperature Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004" SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE .002" 0 - 36 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com |
Price & Availability of HMC-ALH376
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