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| SEMICONDUCTOR TECHNICAL DATA General Description KHB4D5N60P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB4D5N60P A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 9.9 + 0.2 A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS(Min.)= 600V, ID= 4.5A Drain-Source ON Resistance : RDS(ON)=2.5 @VGS =10V Qg(typ.) =17nC 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 4.5 + 0.2 _ 2.4 + 0.2 _ 9.2 + 0.2 1. GATE 2. DRAIN 3. SOURCE P Q MAXIMUM RATING (Tc=25 ) RATING TO-220AB CHARACTERISTIC SYMBOL KHB4D5N60P KHB4D5N60F UNIT KHB4D5N60F2 V V 4.5* 2.8* 18* A K L E KHB4D5N60F A F C Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 106 0.85 4.5 2.8 18 600 30 O DIM B MILLIMETERS M J 260 10.6 4.5 36 0.29 150 -55 150 mJ D R mJ V/ns Q 1 N N H 2 3 A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 12.57 + 0.2 _ 0.5 + 0.1 13.0 MAX _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 W W/ G 1. GATE 2. DRAIN 3. SOURCE Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-toAmbient TO-220IS (1) KHB4D5N60F2 RthJC RthCS RthJA A 1.18 0.5 62.5 3.47 62.5 /W S C F /W /W P E G B DIM MILLIMETERS * : Drain current limited by maximum junction temperature. K L L R J PIN CONNECTION D M D D N N H G 1 2 3 A B C D E F G H J K L M N P Q R S _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ 3.2 +0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 +0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ Q 1. GATE 2. DRAIN 3. SOURCE S TO-220IS 2007. 5. 10 Revision No : 0 1/7 KHB4D5N60P/F/F2 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=600V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=2.25A 600 2 0.6 2.2 10 4 100 2.5 V V/ A V nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS VGS Note 5) Essentially independent of operating temperature. 2007. 5. 10 Revision No : 0 2/7 KHB4D5N60P/F/F2 Fig1. ID - VDS 10 1 VGS TOP : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V Bottom : 5.5 V Fig2. ID - VGS Drain Current ID (A) Drain Current ID (A) 10 1 150 C 10 0 10 0 -55 C 25 C 10 -1 10 -1 10 0 10 1 10 -1 2 4 6 8 10 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Fig3. BVDSS - Tj Normalized Breakdown Voltage BVDSS 1.2 VGS = 0V IDS = 250A Fig4. RDS(ON) - ID 6 On - Resistance RDS(ON) () 5 4 VG = 10V 1.1 1.0 3 VG = 20V 2 1 0 0.9 0.8 -100 -50 0 50 100 150 0 2 4 6 8 10 12 Junction Temperature Tj ( C ) Drain Current ID (A) Fig5. IS - VSD 101 3.0 VGS =10V IDS = 2.25A Fig6. RDS(ON) - Tj Reverse Drain Current IS (A) Normalized On Resistance 0.8 1.0 1.2 1.4 1.6 1.8 2.5 2.0 1.5 1.0 0.5 0.0 -100 10 0 150 C 25 C 10 -1 0.2 0.4 0.6 -50 0 50 100 150 Source - Drain Voltage VSD (V) Junction Temperture Tj ( C) 2007. 5. 10 Revision No : 0 3/7 KHB4D5N60P/F/F2 Fig7. C - VDS 104 12 Fig8. Qg- VGS Gate - Source Voltage VGS (V) 10 8 6 4 2 0 VDS = 120V VDS = 300V VDS = 480V Capacitance (pF) 103 Ciss 102 Coss Crss 101 100 10-1 100 101 102 0 5 10 15 20 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Fig9. Safe Operation Area 102 Fig10. Safe Operation Area 102 (KHB4D5N60P) Operation in this area is limited by RDS(ON) (KHB4D5N60F,KHB4D5N60F2) Operation in this area is limited by RDS(ON) Drain Current ID (A) Drain Current ID (A) 101 1ms 10ms DC 100s 101 100s 1 ms 10 ms 100 ms DC 100 100 Tc= 25 C Tj = 150 C Single nonrepetitive pulse 1ms 10-1 Tc= 25 C Tj = 150 C Single nonrepetitive pulse 10ms DC 10-1 100 101 102 103 10-2 0 10 101 102 103 Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) Fig11. ID - Tj 3.0 2.5 Drain Current ID (A) 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 Junction Temperature Tj ( C) 2007. 5. 10 Revision No : 0 4/7 KHB4D5N60P/F/F2 Fig12. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 10-1 0.1 0.05 PDM t1 t2 Single Pulse 0.02 0.01 - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 10-2 10-5 10-4 TIME (sec) Fig13. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 10-1 0.1 0.05 PDM t1 t2 0.02 0.01 10-2 10-5 Single Pulse - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 10-4 TIME (sec) 2007. 5. 10 Revision No : 0 5/7 KHB4D5N60P/F/F2 Fig14. Gate Charge VGS 10 V ID Fast Recovery Diode 0.8 VDSS 1.0 mA ID VDS Qgs VGS Qgd Qg Q Fig15. Single Pulsed Avalanche Energy EAS= 1 LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 0.5 VDSS 25 VDS ID(t) VDD 10 V VGS VDS(t) Time tp 2007. 5. 10 Revision No : 0 6/7 KHB4D5N60P/F/F2 Fig16. Resistive Load Switching VDS RL 0.5 VDSS 25 VGS 10% tf 10V td(on) VGS ton tr td(off) toff 90% VDS Fig17. Source - Drain Diode Reverse Recovery and dv /dt Body Diode Forword Current DUT VDS IF ISD (DUT) IRM di/dt 0.8 x VDSS driver IS VDS (DUT) Body Diode Reverse Current Body Diode Recovery dv/dt VSD 10V VGS Body Diode Forword Voltage drop VDD 2007. 5. 10 Revision No : 0 7/7 |
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