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| MMBT3904 Pb RoHS COMPLIANCE 0.2 Watts NPN Plastic-Encapsulate Transistors SOT-23 Features As complementary type, the PNP transistor MMBT3906 is recommended Epitaxial planar die construction Marking: 1AM Dimensions in inches and (millimeters) Maximum Ratings Type Number TA=25 oC unless otherwise specified Symbol VCBO VCEO VEBO IC PC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current - continuous Collector Power dissipation ELECTRICAL CHARACTERISTICS Value 60 40 6 0.2 0.2 Units V V V A W Parameter Collector-base breakdown voltage IC=10uA, Ie=0 Collector-emitter breakdown voltage IC=1mA, IB=0 Emitter-base breakdown voltage IE=10uA, IC=0 Collector cut-off current VCB=60V IE=0 Collector cut-off current VCE=30V VBE(off)=3V Emitter cut-off current VEB=5V IC=0 DC current gain VCE=1V IC=10mA VCE=1V IC=50mA VCE=1V IC=100mA IC=50mA, IB=5mA IC=50mA, IB=5mA Transition frequency VCE=20V IC=10mA f=100MHz Delay time VCC=3V VBE=0.5V IC=10mA Rise time IB1= IB2=1.0mA Storage time VCC=3V IC=10mA Fall time IB1= IB2=1.0mA Operating and Storage Temperature Range CLASSIFICATION OF hFE1 Symbol V(BR)CBO V(BR)CEO VBE(ON) ICBO ICEO IEEO hFE(1) hFE(2) hFE(3) VCE(sat) VBE(sat) fT td tr ts tf MIN 60 40 6 MAX Units V V V uA nA uA 100 60 30 0.1 50 0.1 400 0.3 0.95 250 35 35 200 50 -55 to + 150 TJ, TSTG Y 200-300 V V MHz nS nS nS nS o C Rank Range O 100-200 G 300-400 Version: A07 RATINGS AND CHARACTERISTIC CURVES (MMBT3904) Version: A07 |
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