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BAS70TW/ADW/CDW/SDW
SURFACE MOUNT SCHOTTKY DIODE ARRAYS
These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 (SC70-6L)
4 5 6 2 1 3
FEATURES
Maximum forward voltage @ 1.0mA of 0.41V Maximum leakage current @ 50V of 100nA Reverse voltage rating of 70V Also available in lead-free plating (100% matte tin finish)
APPLICATIONS
Rail-to-rail ESD protection Overshoot and undershoot switching control Mobile phones and accessories Video game consoles connector ports
BAS70TW
5 4
SOT- 363 Various Configurations (See Diagrams Below)
Isolated Triple
BAS70ADW
Common Anode
Common Cathode
BAS70CDW
6 5 4
BAS70SDW
Series
6
6
5
4
6
5
4
1
2
3
1
2
3
1
2
3
1
2
3
Marking Code: A70
Marking Code: A72
Marking Code: A73
Marking Code: A74
MAXIMUM RATINGS (Per Diode) TJ = 25C Unless otherwise noted
Rating Repetitive Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Non-repetitive Peak Forward Current, t = 1sec, Square Wave Total Power Dissipation (Note 1) Operating Junction Temperature Range Storage Temperature Range
Note 1. FR-5 Board 1.0 x 0.75 x 0.062 in.
Symbol VRRM VR IF I FSM P tot TJ Tstg
Value 70 70 200 0.6 225 -55 to +125 -55 to +125
Units V V mA A mW C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Symbol R thja Value 556 Units C/W
3/23/2005
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BAS70TW/ADW/CDW/SDW
ELECTRICAL CHARACTERISTICS (Per Diode) Tj = 25C Unless otherwise noted
Parameter Breakdown Voltage (Note 1) Symbol V BR VF IR CD t rr Conditions I BR = 100 uA I F = 1.0 mA Forward Voltage (Note 1) Reverse Leakage Current (Note 1) Junction Capacitance Reverse Recovery Time (See Figure 1) I F = 10 mA
I F = 15 mA
Min 70 -
Typ -
Max 0.41 0.75
1.0
Units V V nA pF ns
V R = 50 V 0Vdc Bias, f =1 MHz I F = 10mA, I R= 10mA R L= 100 Ohms; measured at IRrec = 1mA
-
1.25 -
100 2.0 5
Note 1: Short duration (<300us) test pulse to minimize self heating
820
+10 V
2 .0 k 100 H 0 .1 F IF
0 .1 F
?
DUT
5 0 O u tp u t P u ls e G e n e ra to r
5 0 In p u t S a m p li n g O s c il lo s c o p e
Notes: 1. A 2.0k variable resistor adjusted for a forward current (IF) to 10mA 2. Input pulse is adjusted to IR(peak) is equal to 10mA
Figure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT
3/23/2005
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BAS70TW/ADW/CDW/SDW
TYPICAL CHARACTERISTIC CURVES (Per Diode)
100
100.000
TJ = 125C
Forward Current, IF (mA)
10.000
TJ = 125C
10
Reverse Current, I R (uA)
1.000 TJ = 75C 0.100
1
TJ = 75C
0.010
TJ = 25C 0.1 0 0.2 0.4 0.6 0.8 1 Forw ard V oltage , V F (V)
TJ = 25C
0.001 0 20 40 60 80 Re ve rs e Voltage , V R (V)
Fig. 2. Typical Forward Characteristics
Fig. 3. Typical Reverse Characteristics
1.40 1.20 TJ = 25C
Capacitance, C (pF
1.00 0.80 0.60 0.40 0.20 0.00 0 10 20 30 40 50 60 Reverse Voltage, V R (V)
Fig. 4. Typical Capacitance
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BAS70TW/ADW/CDW/SDW
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
ORDERING INFORMATION
BAS70xxx T/R7 - 7" reel, 3K units per reel BAS70xxx T/R13 - 13" reel, 10K units per reel
Copyright PanJit International, Inc 2005
The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others.
3/23/2005
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