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PD - 95202
IRF7402PBF
Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Lead-Free Description
HEXFET(R) Power MOSFET
S S S G
1 2 3 4 8 7
A A D D D D
VDSS = 20V RDS(on) = 0.035
6 5
Top View
Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characterstics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8 W is possible in a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
6.8 5.4 54 2.5 1.6 0.02 12 5.0 -55 to + 150
Units
A W W/C V V/ns C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
50
Units
C/W
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9/30/04
IRF7402PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 --- --- --- 0.70 6.1 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.024 --- V/C Reference to 25C, ID = 1mA 0.035 VGS = 4.5V, ID = 4.1A 0.050 VGS = 2.7V, ID = 3.5A --- --- V VDS = VGS, ID = 250A --- --- S VDS = 10V, ID = 1.9A --- 1.0 VDS = 16V, VGS = 0V A --- 25 VDS = 16V, V GS = 0V, TJ = 125C --- 100 VGS = 12V nA --- -100 VGS = -12V 14 22 ID = 3.8A 2.0 3.0 nC VDS = 16V 6.3 9.5 VGS = 4.5V, See Fig. 6 and 12 5.1 --- VDD = 10V 47 --- ID = 3.8A ns 24 --- RG = 6.2 32 --- R D = 2.6 650 --- VGS = 0V 300 --- pF VDS = 15V 150 --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Q rr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 51 69 2.5 A 54 1.2 77 100 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 3.8A, VGS = 0V TJ = 25C, IF = 3.8A di/dt = 100A/s
D
S
Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) ISD 3.8A, di/dt 96A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec This data sheet has curves & data from IRF7601
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IRF7402PBF
100
VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP
100
I , Drain-to-Source Current (A) D
10
I , Drain-to-Source Current (A) D
VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP
10
1
1
1.5V
1.5V
0.1 0.1 1
20s PULSE WIDTH TJ = 25C A
10
0.1 0.1
20s PULSE WIDTH TJ = 150C A
1 10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 3.8A
I D , Drain-to-Source Current (A)
1.5
10
TJ = 150C
1.0
1
TJ = 25C
0.5
0.1 1.5 2.0 2.5
V DS = 10V 20s PULSE WIDTH
3.0
3.5
A
0.0 -60 -40 -20
VGS = 4.5V
0 20 40 60
80 100 120 140 160
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7402PBF
1200
1000
V GS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
Ciss
800
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
10
I D = 3.8A VDS = 16V
8
Coss
600
6
4
400
Crss
200
2
0 1 10 100
A
0 0 4 8 12
FOR TEST CIRCUIT SEE FIGURE 9
16 20 24
A
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
TJ = 150C TJ = 25C
1
ID , Drain Current (A)
100
100us 10 1ms
0.1 0.4 0.8 1.2 1.6
VGS = 0V
2.0
A
1
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms 100
2.4
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7402PBF
8.0
V DS VGS
RD
ID , Drain Current (A)
6.0
RG
D.U.T.
+
- V DD
4.5V
4.0
Pulse Width 1 s Duty Factor 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
VDS 90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Ambient Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 1 10 100
10
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7402PBF
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
4.5V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 12a. Basic Gate Charge Waveform
Fig 12b. Gate Charge Test Circuit
RDS(on) , Drain-to-Source On Resistance ( )
0.2
VGS = 2.5V
RDS(on) , Drain-to-Source On Resistance ( )
0.3
0.05
0.04
ID = 5.7A ,
0.03
0.1
0.0
VGS =5V
0 3
I
6
9
12
15
A
0.02
2
4
6
8
A
, , Drain Current (A)
V /5 , Gate-to-Source Voltage (V)
Fig 14. Typical On-Resistance Vs. Gate Voltage
Fig 13. Typical On-Resistance Vs. Drain Current
6
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IRF7402PBF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
6 E
8
7
6
5 H 0.25 [.010] A
c D E e e1 H K L y
1
2
3
4
.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X e
e1
A C 0.10 [.004] y
K x 45
8X b 0.25 [.010]
A1 CAB
8X L 7
8X c
NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 3X 1.27 [.050] 6.46 [.255]
FOOTPRINT 8X 0.72 [.028]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET) DATE CODE (YWW) P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR WW = WEEK A = ASSEMBLY SITE CODE LOT CODE PART NUMBER
INTERNATIONAL RECTIFIER LOGO
XXXX F7101
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IRF7402PBF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04
8
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