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| PD- 95726 SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current IRF7471PBF HEXFET(R) Power MOSFET VDSS 40V RDS(on) max 13m ID 10A S S S G 1 8 7 A A D D D D 2 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. 40 20 10 8.3 83 2.5 1.6 0.02 -55 to + 150 Units V V A W W mW/C C Thermal Resistance Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. --- --- Max. 20 50 Units C/W Notes through are on page 8 www.irf.com 1 8/11/04 IRF7471PBF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. Typ. Max. Units Conditions 40 --- --- V VGS = 0V, ID = 250A --- 0.043 --- V/C Reference to 25C, I D = 1mA --- 9.5 13 VGS = 10V, ID = 10A m Static Drain-to-Source On-Resistance --- 12 16 VGS = 4.5V, ID = 8.0A Gate Threshold Voltage 1.0 --- 3.0 V VDS = VGS, ID = 250A --- --- 20 VDS = 32V, VGS = 0V Drain-to-Source Leakage Current A --- --- 100 VDS = 32V, VGS = 0V, TJ = 125C Gate-to-Source Forward Leakage --- --- 200 VGS = 16V nA Gate-to-Source Reverse Leakage --- --- -200 VGS = -16V Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 22 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 21 7.2 8.2 23 12 2.7 15 4.1 2820 700 46 Max. Units Conditions --- S VDS = 20V, ID = 8.0A 32 ID = 8.0A 11 nC VDS = 20V 12 VGS = 4.5V 35 VGS = 0V, VDS = 16V --- VDD = 20V --- ID = 8.0A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 20V --- pF = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Typ. --- --- Max. 300 8.0 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units --- --- --- --- 2.3 A 83 1.3 --- 100 200 110 240 V ns nC ns nC VSD trr Qrr trr Qrr --- 0.80 --- 0.65 --- 69 --- 130 --- 73 --- 160 Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 8.0A, VGS = 0V TJ = 125C, IS = 8.0A, VGS = 0V TJ = 25C, IF = 8.0A, VR= 20V di/dt = 100A/s TJ = 125C, IF = 8.0A, VR=20V di/dt = 100A/s 2 www.irf.com IRF7471PBF 1000 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 100 10 2.7V 1 10 2.7V 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 10A I D , Drain-to-Source Current (A) 2.0 TJ = 150 C 1.5 10 TJ = 25 C 1.0 0.5 1 2.0 V DS = 25V 20s PULSE WIDTH 2.5 3.0 3.5 4.0 4.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7471PBF 100000 10 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd ID = 8.0A VDS = 32V VDS = 20V 8 10000 C, Capacitance(pF) Ciss 1000 6 Coss 4 100 Crss 2 10 1 10 100 0 0 10 20 30 40 50 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 ISD , Reverse Drain Current (A) TJ = 150 C OPERATION IN THIS AREA LIMITED BY RDS(on) 10 I D , Drain Current (A) 100 10us 100us 10 1ms TJ = 25 C 1 0.1 0.4 V GS = 0 V 0.8 1.2 1.6 2.0 1 TA = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7471PBF 12 VDS 10 RD VGS RG 4.5V Pulse Width 1 s Duty Factor 0.1 % ID , Drain Current (A) D.U.T. + 8 -V DD 6 4 Fig 10a. Switching Time Test Circuit 2 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 PDM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7471PBF R DS(on) , Drain-to -Source On Resistance () RDS (on) , Drain-to-Source On Resistance () 0.020 0.020 0.018 0.018 0.016 VGS = 4.5V 0.014 VGS = 10V 0.016 0.014 ID = 10A 0.012 0.012 0.010 3 4 5 6 7 8 9 10 0.010 0 20 40 60 80 100 ID , Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50K 12V .2F .3F VGS QGS D.U.T. + V - DS QG QGD 800 VG EAS , Single Pulse Avalanche Energy (mJ) VGS 3mA TOP BOTTOM 600 Charge IG ID ID 3.6A 6.4A 8.0A Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform 400 15V 200 V(BR)DSS tp VDS L DRIVER RG 20V D.U.T IAS + V - DD 0 25 50 75 100 125 150 A I AS tp 0.01 Starting TJ , Junction Temperature ( C) Fig 14a&b. Unclamped Inductive Test circuit and Waveforms Fig 14c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7471PBF SO-8 Package Outline Dimensions are shown in millimeters (inches) D A 5 B DIM A b INCHE S MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 8 6 E 1 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45 8X L 7 8X c NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] F OOTPRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 www.irf.com 7 IRF7471PBF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. Starting TJ = 25C, L = 9.4mH RG = 25, IAS = 8.0A. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04 8 www.irf.com |
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