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| SCA-HS16B Silicon PIN Photodiode Data Sheet Description The SCA-HS16B is a high-speed silicon PIN photodiode with bandwidth of 1GHz and low capacitance with high responsivity across the spectral range of 320nm to 1100 nm. This N-type photodiode offers high speed, low capacitance, and high breakdown voltage characteristics. The standard version of model SCA-HS16B is housed in a hermetically sealed TO-18 metal case. It is also available in custom packages and in chip form for hybrid circuit boards. This device is capable of meeting MIL-PRF-19500 requirements for environmental integrity and reliability. Applications * * * * Fiber Optic Communications Fast Pulse Measurement Data Communications Optical Power Meters Features * Photoconductive or Photovoltaic Regime * High-Reliability Hermetic Package * Available in Chip Form * Spectral Response from 320 to 1100nm Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900. * * * * Low Dark Current Low Total Capacitance Low Cost 1 GHz response at 5 Volt bias Absolute Maximum Ratings Parameter Operation Temperature Storage Temperature Reverse Voltage Symbol TOP TSTG VR Rating -50 to +120 -55 to +150 100 Unit O O C C V Copyright 2003 Rev. 3.1 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 3 www.SEMICOA.com SCA-HS16B Silicon PIN Photodiode Data Sheet DEVICE CHARACTERISTICS characteristics specified at TA = 25C Mechanical Characteristics Active Diameter Active Area d A 0.020 0.16 Inches mm2 Optical Characteristics Spectral Response Peak Sensitive Wavelength p 320 to 1100 820 nm nm Electrical Characteristics Parameter Dark Current Responsivity Risetime Capacitance Reverse Breakdown Voltage Forward Voltage Shunt Resistance Series Resistance Noise Equivalent Power Package Specifications Symbol ID R tr Cj VBR VF Rsh RS NEP Test Conditions VR = 1 mV VR = 10 V = 900 nm = 830 nm = 632 nm VR = 25 V, RL = 50 VR = 25 V, f = 1 MHz IR = 10 A IF = 1 mA VR = 1 mV IF = 10 mA Min Typ 0.001 0.01 0.25 0.4 0.3 0.35 1.5 100 0.65 10 6.0 3x10-15 Max 0.1 1.0 Units nA A/W 0.5 2 1.00 10.0 ns pF V V G W/Hz1/2 0.2 0.3 0.25 50 1 CATHODE 3 CASE 2 1 ANODE 0.500 (12.70) 0.145 (3.68) O0.211 (5.36) O0.116 (2.95) WINDOW 0.018 (0.46) PIN DIAMETER 0.037 (0.94) O0.186 (4.72) O0.100 (2.54) Hole Size: 0.022 (0.56) Annular Ring: 0.015 (0.38) Copyright 2003 Rev. 3.1 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 3 www.SEMICOA.com SCA-HS16B Silicon PIN Photodiode Data Sheet all curves at TA = 25C unless otherwise specified CHARACTERISTIC CURVES 0.5 3 Cj - Capacitance (pF) 2.5 2 1.5 1 R - Responsivity (A/W) 0.4 0.3 0.2 0.1 0 400 500 600 700 800 900 1000 1100 0 - Wavelength (nm) 10 20 30 40 VR - Reverse Voltage (Volts) 50 Figure 1 Responsivity vs Wavelength ID - Reverse Dark Current (nA) 1 0.1 0.01 0.001 0.0001 0.00001 0.000001 20 30 40 50 60 70 80 90 Figure 2 Capacitance vs Reverse Voltage ID - Reverse Dark Current (nA) 1 0.1 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 T - Temperature (oC) VR - Reverse Voltage (Volts) Figure 3. Reverse Current vs Temperature A) 1 00 1 0 1 0.1 0.01 0.001 0.0001 0.00001 0.000001 0.000001 0.0001 0.01 1 1 00 Figure 4. Reverse Current vs Reverse Voltage 1.E-13 IL - Output Light Current ( NEP - Noise Equivalent Power (W/Hz1/2) 1.E-14 1.E-15 0.0001 0.001 0.01 0.1 1 10 100 Ee - Radiation Flux (mW/cm 2 ) VR - Reverse Voltage (Volts) Figure 5. Light Current vs Irradiance @ = 950 nm Figure 6 Noise Equivalent Power vs Reverse Voltage Specifications are subject to change without notice. Please consult the website or factory for current information. Copyright 2003 Rev. 3.1 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 3 of 3 www.SEMICOA.com |
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