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2SK3669
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VII)
2SK3669
Switching Regulator, Audio Amplifier and Motor Drive Applications
* * * * Low drain-source ON-resistance: RDS (ON) = 95 m (typ.) High forward transfer admittance: |Yfs| = 6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 100 V) Enhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP IDP PD EAS IAR (Note 3) Channel temperature Storage temperature range EAR Tch Tstg Rating 100 100 20 10 15 28 20 280 10 2 150 -55 to 150 W mJ A mJ C C A Unit V V V
Pulse (tw 10 ms) (Note 1) Pulse (tw 1 ms) (Note 1)
JEDEC JEITA TOSHIBA
2-7J1B
Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit C/ W C/ W
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 50 V, Tch = 25C (initial), L = 3.44 mH, IAR = 10 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
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Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge tf toff Qg Qgs Qgd Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 10 V VGS 0V 50 ID = 10 A RL = 5 VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A VDS = 10 V, ID = 5 A Min 100 3.0 3 VDD 80 V, VGS = 10 V, ID = 10 A Typ. 95 6 480 9 220 2 12 2 12 8.0 5.6 2.4 Max 100 100 5.0 125 ns nC pF Unit nA A V V m S
VDD 50 V Duty 1%, tw = 10 s
Source-Drain Diode Ratings and Characteristics (Ta = 25C)
Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (tw 10 ms) (Note 1) Pulse drain reverse current (tw 1 ms) (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP IDRP VDS2F trr Qrr Test Condition IDR1 = 10 A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR/dt = 50 A/s Min Typ. 65 90 Max 10 15 28 -1.7 Unit A A A V ns nC
Marking
K3669
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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ID - VDS
10 Common source Tc = 25C Pulse test 15 6 7.5 20 10 9 8.5 8 16 15 9.5
ID - VDS
9 Common source Tc = 25C Pulse test 8.5
8
Drain current ID (A)
Drain current ID (A)
10 12
8 8
4
7
7.5 VGS = 6.5 V
2 VGS = 6.5 V 0 0
4
0.4
0.8
1.2
1.6
2.0
0 0
2
4
6
8
10
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID - VGS
20 Common source VDS = 10 V Pulse test 2.0
VDS - VGS
Common source Tc = 25C Pulse test
16
VDS (V) Drain-source voltage
1.6
Drain current ID (A)
12
1.2 ID = 10 A 0.8 100 0.4
8 Ta = -55C 4 100 25 0 0 4 8 12 16 20
5 2.5
0 0
4
8
12
16
20
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
Yfs - ID
50 30 5 3
RDS (ON) - ID
(S)
Common source Tc = 25C Pulse test
Forward transfer admittance Yfs
10 5 3
Tc = -55C 100 25
Drain-source ON-resistance RDS (ON) (m)
1 0.5 0.3 VGS = 10 V 0.1 0.05 0.03 15
1 0.5 0.3 Common source VDS = 10 V Pulse test 1 10 100
0.1 0.1
0.01 0.1
1
10
100
Drain current ID (A)
Drain current ID (A)
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2SK3669
RDS (ON) - Tc
250
IDR - VDS
100
Drain-source ON-resistance RDS (ON) ( )
200
ID = 10 A 5A 2.5
Drain reverse current IDR
(A)
10
Common source VGS = 10 V Pulse test
10
150
100
3 1 Common source 1 VGS = 0, -1 V 1 1.5 Tc = 25C Pulse test 2 2.5
50
0 -80
-40
0
40
80
120
160
0.1 0
0.5
Case temperature Tc (C)
Drain-source voltage
VDS (V)
Capacitance - VDS
3000 10
Vth - Tc
Common source VDS = 10 V 8 ID = 1 mA Pulse test 6
500
Ciss
(pF)
300
100 50 30 Common source 10 Tc = 25C f = 1 MHz 5V GS = 0 V 3 0.1 0.3 Coss
Gate threshold voltage
300
Capacitance C
Vth (V)
1000
4
2
Crss 1 3 10 30 100 0 -80 -40 0 40 80 120 160
Drain-source voltage
VDS (V)
Case temperature Tc (C)
PD - Tc
25 100
Dynamic input/output characteristics
Common source ID = 10 A VDD = 80 V Tc = 25C Pulse test 25
Drain power dissipation PD (W)
VDS (V)
20
80
20
Drain-source voltage
10
40 VGS 20
10
5
5
0 0
40
80
120
160
0 0
5
10
15
0 20
Case temperature Tc (C)
Total gate charge Qg (nC)
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Gate-source voltage
15
60
15
VGS (V)
VDS
2SK3669
rth - tw
3
Normalized transient thermal impedance rth (t)/Rth (ch-c)
1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t T Single pulse Duty = t/T Rth (ch-c) = 6.25C/W 1m 10 m 100 m 1 10
0.01
0.003 10
100
Pulse width
tw
(S)
Safe operating area
100 300
EAS - Tch
100 s* 1 ms*
Avalanche energy EAS (mJ)
ID max (pulsed)*
240
10
(A)
5 3
ID max (continuous)
10 ms*
180
Drain current ID
1 0.5 0.3
120
60
* Single nonrepetitive pulse Tc = 25C 0.03 Curves must be derated linearly with increase in temperature. 0.01 0.1 0.3 1 3 0.05
0.1
0 25
50
75
100
125
150
Channel temperature (initial) Tch
VDSS max 10 30 100 300
(C)
Drain-source voltage
VDS (V)
15 V
-15 V
BVDSS IAR VDD VDS Waveform
AS = 1 B VDSS L I2 B 2 VDSS - VDD
Test circuit
RG = 25 VDD = 50 V, L = 3.44 mH
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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