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AO4619 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4619 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Standard Product AO4619 is Pb-free (meets ROHS & Sony 259 specifications).
Features
n-channel VDS (V) = 30V ID = 7.4A (V GS=10V) RDS(ON) < 24m (VGS=10V) < 36m (VGS=4.5V) p-channel -30V -5.2A (V GS = -10V) RDS(ON) < 48m (VGS = -10V) < 74m (VGS = -4.5V)
S2 G2 S1 G1
1 2 3 4
8 7 6 5
D2 D2 D1 D1 G2
D2
D1
SOIC-8
S2
G1 S1
n-channel
p-channel Max p-channel -30 20 -5.2 -4.2 -25 2 1.3 11 18 -55 to 150 W A mJ C A Units V V
Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 20 Continuous Drain Current F Pulsed Drain Current Power Dissipation
A B B B
TA=25C TA=70C TA=25C TA=70C ID IDM PD IAR EAR TJ, TSTG
7.4 6 35 2 1.3 13 25 -55 to 150
Avalanche Current
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C
Symbol RJA RJL RJA RJL
Device n-ch n-ch n-ch p-ch p-ch p-ch
Typ 50 82 41 50 82 41
Max 62.5 110 50 62.5 110 50
Units C/W C/W C/W C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4619
N-channel MOSFET Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=7.4A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=7.4A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1 35 19 27 29 24 0.74 1 2.5 621 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 118 85 0.8 11.3 VGS=10V, VDS=15V, ID=7.4A 5.7 2.1 3 4.5 VGS=10V, VDS=15V, RL=2, RGEN=3 IF=7.4A, dI/dt=100A/s 3.1 15.1 2.7 15.5 7.1 1.5 820 24 34 36 1.62 Min 30 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=7.4A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. Rev 0: Oct 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4619
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 10V 50 40 ID (A) 30 20 10 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 40 35 RDS(ON) (m) 30 25 20 15 10 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V VGS=4.5V Normalized On-Resistance 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V Id=7.4A VGS=4.5V Id=6A 6V 16 4.5V ID(A) 20 VDS=5V
12
8 VGS=3.5V 4 125C 25C
0 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics
60 ID=7.4A 50 RDS(ON) (m) 40 125C IS (A)
1.0E+01 1.0E+00 1.0E-01 125C 1.0E-02
30 25C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT 1.0E-03 AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY AR 20 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1.0E-04 25C FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 10 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 VGS (Volts) VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Figure 6: Body-Diode Characteristics Voltage
Alpha & Omega Semiconductor, Ltd.
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AO4619
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12
0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1000
Capacitance (pF)
VDS=15V ID=7.4A
800
Ciss
600
400
Coss
200
Crss
Qg (nC) Figure 7: Gate-Charge Characteristics
100 10s 10 -ID (Amps) 100s 1
Power (W)
50
40
TJ(Max)=150C TA=25C
RDS(ON) limited D
1ms 10ms 100m 1s 10s
30
20
0.1
TJ(Max)=150C TA=25C
10
0.01 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL P COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOSDDOES NOT ASSUME ANY LIABILITY AR 0.1 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4619
P-cahnnel MOSFET Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, I D=-5.2A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, I D=-4A Forward Transconductance VDS=-5V, ID=-5.2A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C -1 -25 38 55 59 11 -0.77 -1 -2.5 680 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 115 86 8 12.7 VGS=-10V, VDS=-15V, I D=-5.2A 6.4 2 4 7.7 VGS=-10V, VDS=-15V, RL=3, RGEN=3 IF=-5.2A, dI/dt=100A/s IF=-5.2A, dI/dt=100A/s 6.8 20 10 22 15 12 816 48 69 74 -1.88 Min -30 -1 -5 100 -3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. Rev 0: Oct 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4619
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40 35 30 25 -ID (A) 20 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics 100 Normalized On-Resistance 1.6 VGS=-10V ID=-5.2A 0 0 1 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics -4.5V -4V VGS=-3.5V 2 125C 25C -ID(A) -10V -8V -5V 10 VDS=-5V 8 6 4
80 RDS(ON) (m) VGS=-4.5V 60 VGS=-10V 40
1.4
1.2
VGS=-4.5V ID=-4A
1.0
0.8
20 0 2 4
=-6.5A, dI/dt=100A/s IF6 8 10
0.6 -50 0 50 100 150 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
160 140 120 RDS(ON) (m) -IS (A) 100 ID=-5.2A
1E+01 1E+00 1E-01 1E-02
125C 1E-03 80 125C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1E-04 60 25C OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1E-05 40 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25C 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4619
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 -VGS (Volts) 6 4 2 0 0 3 6 9 12 15
0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 1200
VDS=-15V ID=-5.2A Capacitance (pF)
1000
800
Ciss
600
400
Coss
200
Crss
-Qg (nC) Figure 7: Gate-Charge Characteristics
100
40 100s Power (W)
TJ(Max)=150C TA=25C
-ID (Amps)
10
RDS(ON) limited
30
1ms 1 TJ(Max)=150C TA=25C 0.1 0.1 1 DC 10ms 100ms 1s 10s
20
10
IF=-6.5A, dI/dt=100A/s 10 100
-VDS (Volts)
0
0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
1
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 0.01 Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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