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FDPF2710T 250V N-Channel PowerTrench MOSFET
September 2007
FDPF2710T
250V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Description
* * * * * 25A, 250V, RDS(on) = 36.3m @VGS = 10 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability
Application
* Ballast Application
D
G GD S
TO-220F
S
Absolute Maximum Ratings
Symbol
VDS VGS ID IDM EAS dv/dt PD TJ, TSTG TL Drain-Source Voltage Gate-Source voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1) (Note 2) (Note 3)
Parameter
Ratings
250 30 25 18.8 100 145 4.5 62.5 0.5 -55 to +150 300
Unit
V V A A A mJ V/ns W W/C C C
Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Min
---
Max
2.0 62.5
Unit
C/W C/W
(c)2007 Fairchild Semiconductor Corporation
1
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FDPF2710T Rev. A
FDPF2710T 250V N-Channel PowerTrench MOSFET
Package Marking and Ordering Information
Device Marking
FDPF2710T
Device
FDPF2710T
Package
TO-220F
Reel Size
--
Tape Width
--
Quantity
50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
TC = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
Conditions
VGS = 0V, ID = 250A, TJ = 25C ID = 250A, Referenced to 25C VDS = 250V, VGS = 0V VDS = 250V, VGS = 0V,TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 25A VDS = 10V, ID = 25A
(Note 4)
Min
250 ------
Typ
-0.25 -----
Max Units
--10 500 100 -100 V V/C A A nA nA
On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 --3.9 36.3 63 5.0 42.5 -V m S
Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz ---5470 426 97 7280 567 146 pF pF pF
Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 125V, ID = 50A VGS = 10V
(Note 4, 5) (Note 4, 5)
VDD = 125V, ID = 50A VGS = 10V, RGEN = 25
--------
80 252 112 154 78 34 18
170 514 234 318 101 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 50A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 25A VGS = 0V, IS = 50A dIF/dt =130A/s
(Note 4)
------
---163 1.3
25 150 1.2 ---
A A V ns C
FDPF2710T Rev. A
2
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FDPF2710T 250V N-Channel PowerTrench MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
500
VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V
Figure 2. Transfer Characteristics
250 100
150 C
o
100
ID,Drain Current[A]
ID,Drain Current[A]
-55 C
o
10
10
25 C
o
* Notes : 1. 250s Pulse Test 2. TC = 25 C
o
1 0.1
1
* Notes : 1. VDS = 20V 2. 250s Pulse Test
1 VDS,Drain-Source Voltage[V]
10
4
6 8 VGS,Gate-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.07
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
150
100
RDS(ON) [], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
* Notes : 1. VGS=0V 2. 250s Pulse Test
0.06
0.05
VGS = 10V
0.04
10
TA = 150 C
o
TA = 25 C
o
VGS = 20V
0.03
* Note : TJ = 25 C
o
0.02 0 25
50 75 100 ID, Drain Current [A]
125
150
1 0.2
0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V]
1.2
Figure 5. Capacitance Characteristics
9000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 50V
8
VDS = 125V VDS = 200V
Capacitances [pF]
6000
Ciss
6
Coss
4
3000
Crss * Note: 1. VGS = 0V 2. f = 1MHz
2
* Note : ID = 50A
0 -1 10
10 10 VDS, Drain-Source Voltage [V]
0
1
30
0 0 10
20 30 40 50 60 Qg, Total Gate Charge [nC]
70
80
FDPF2710T Rev. A
3
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FDPF2710T 250V N-Channel PowerTrench MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
Figure 8. On-Resistance Variation vs. Temperature
2.5 rDS(on), [Normalized] Drain-Source On-Resistance 2
1.1
1.0
1
0.9
* Notes : 1. VGS = 0V 2. ID = 250A
* Notes : 1. VGS = 10V 2. ID = 25A
0.8 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
0 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
30
100
100s
Drain Current, ID [A]
10
10 ms
ID, Drain Current [A]
1ms
20
1
Operation in This Area is Limited by R DS(on)
DC
10
0.1
* Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
0.01 1 10 100 Drain-Source Voltage, VDS [V] 400
0 25
50 75 100 TC, Case Temperature
o
125
150
C
Figure 11. Transient Thermal Response Curve
Thermal Response ZJC
10
0
0.5 0.2
10
-1
0.1 0.05 0.02
PDM t1 t2
* Notes : 1. ZJC(t) = 2.0 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t)
o
10
-2
0.01
Single pulse
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Rectangular Pulse Duration [sec]
FDPF2710T Rev. A
4
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FDPF2710T 250V N-Channel PowerTrench MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDPF2710T Rev. A
5
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FDPF2710T 250V N-Channel PowerTrench MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDPF2710T Rev. A
6
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FDPF2710T 250V N-Channel PowerTrench MOSFET
Mechanical Dimensions
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20
+0.10
2.76 0.20
9.40 0.20
FDPF2710T Rev. A
7
15.87 0.20
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FDPF2710T 250V N-Channel PowerTrench MOSFET
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R)
(R)
Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM
Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
(R)
PDP-SPMTM Power220(R)
Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM The Power Franchise(R)
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
FDPF2710T Rev. A
8
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