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| PHOTODIODE Si photodiode with preamp S8745-01, S8746-01 Photodiode and preamp integrated with feedback resistance and capacitance S8745-01, S8746-01 are low-noise sensors consisting of Si photodiode, op amp, and feedback resistance and capacitance, all integrated into a small package. By simply connecting to a power supply, S8745-01 and S8746-01 can be used in low-light-level measurement such as analytical equipment and measurement equipment. The active area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise. Features Applications S8745-01: TO-5 S8746-01: TO-8 l Active area S8745-01: 2.4 x 2.4 mm S8746-01: 5.8 x 5.8 mm l FET input operational amplifier with low power dissipation l Built-in Rf=1 G and Cf=5 pF l Variable gain with an externally connected resistor l Low noise and NEP l Package with shielding effect l Resistant to EMC noise l Si photodiode for UV to near IR precision photometry l Small hermetic sealed package with quartz window l Spectrophotometry l General-purpose optical measurement S8745-01, S8746-01 may be damaged by Electro Static Discharge, etc. Please see Precautions for use in the last page. s Absolute maximum ratings (Ta=25 C) Parameter Supply voltage (op amp) Power dissipation Operating temperature Storage temperature Symbol Vcc P Topr Tstg Value 20 500 -20 to +60 -30 to +80 Unit V mW C C s Electrical and optical characteristics (Typ. Ta=25 C, Vcc=15 V, RL=1 M, unless otherwise noted) Parameter Spectral response range Peak sensitivity wavelength Feedback resistance (built-in) Feedback capacitance (built-in) Photo sensitivity Output noise voltage Noise equivalent power Output offset voltage Cut-off frequency Output voltage swing Supply current Symbol p Rf Cf S Vn NEP Vos fc Vo Icc Condition S8745-01 190 to 1100 960 1 5 0.12 0.52 6 5 11 11 4 32 13 0.3 7 6 15 15 S8746-01 Unit nm nm G pF V/nW Vrms/Hz1/2 fW/Hz1/2 mV Hz V mA =200 nm =p Dark state f=10 Hz Dark state, f=20 Hz =p, f=10 Hz =p, f=20 Hz Dark state -3 dB Dark state 1 Si photodioe with preamp Figure 1 Spectral response S8745-01, S8746-01 0.6 S8745-01, S8746-01 [Typ.Ta=25 C, Rf=1 G (built-in), Cf=5 pF (built-in)] PHOTO SENSITIVITY (V nW) 0.5 0.4 0.3 0.2 0.1 0 190 400 600 800 1000 1200 WAVELENGTH (nm) KSPDB0232EA The built-in feedback resistance and capacitance of S874501 and S8746-01 are 1 G and 5 pF, respectively. This combination provides a sensitivity of about 0.1 to 0.5 V/nW in the wavelength range of 190 to 1100 nm. Figure 2 Gain-frequency characteristics S8745-01 104 [Typ. Ta=25 C, Vcc=15 V, Cf=5 pF (built-in), RL=1 M] S8745-01 103 +111 M (EXTERNAL CONNECTED) +11 M (EXTERNAL CONNECTED) S8746-01 104 [Typ. Ta=25 C, Vcc=15 V, Cf=5 pF (built-in), RL=1 M] S8746-01 103 +111 M (EXTERNAL CONNECTED) +11 M (EXTERNAL CONNECTED) CURRENT-TO-VOLTAGE CONVERSION GAIN (M) 102 CURRENT-TO-VOLTAGE CONVERSION GAIN (M) 102 101 101 100 +1 M (EXTERNAL CONNECTED) 100 +1 M (EXTERNAL CONNECTED) 10-1 10-1 10-2 0.01 0.1 1 10 100 10-2 0.01 0.1 1 10 100 FREQUENCY (kHz) KSPDB0233EA FREQUENCY (kHz) KSPDB0234EA The current-to-voltage conversion gain can be varied by connecting an external feedback resistor between pins 4 and 6 for S8745-01, and between pins 9 and 12 for S8746-01 (see figure 5). Figure 2 shows the frequency response characteristics of S8745-01 and S8746-01 with or without an externally connected feedback resistor. Because S8745-01 and S8746-01 have a built-in resistor of 1 G, for example the total feedback resistance will be converted to 100 M by externally connecting a resistor of 111 M. Choose the desired constant according to the incident light level to be detected. Note) If the external feedback resistor is 1 M or less, gain peaking may occur in the frequency response. Therefore, be sure to connect a matched feedback capacitor for phase compensation. 2 Si photodioe with preamp Figure 3 Output noise voltage vs. frequency S8745-01 [Typ. Ta=25 C, Vcc=15 V, Cf=5 pF (built-in), RL=1 M, dark state] 100 100 S8745-01, S8746-01 S8746-01 [Typ. Ta=25 C, Vcc=15 V, Cf=5 pF (built-in), RL=1 M, dark state] OUTPUT NOISE VOLTAGE (Vrms/Hz1/2) OUTPUT NOISE VOLTAGE (Vrms/Hz1/2) S8745-01 10 +111 M (EXTERNAL CONNECTED) +11 M (EXTERNAL CONNECTED) S8746-01 10 +111 M (EXTERNAL CONNECTED) 1 1 0.1 +1 M (EXTERNAL CONNECTED) 0.1 +11 M (EXTERNAL CONNECTED) +1 M (EXTERNAL CONNECTED) 0.01 0.001 0.01 0.1 1 10 100 1000 0.01 0.001 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) KSPDB0235EA FREQUENCY (kHz) KSPDB0236EA Output noise voltage and NEP (noise equivalent power) characteristics allow you to check whether the device can detect the lowlevel light you want to measure. Since NEP is given by the equation (1) as shown at the right, NEP at wavelengths other than p can be easily calculated from Figure 1 and Figures 4. Note) When S8745-01 and S8746-01 are used only with the internal current-to-voltage gain, it is recommended that the "-IN" lead (pin 6 for S874501; pin 9 for S8746-01) be cut off to a short length in order to reduce the influence of external noise as much as possible. NEP (f, ) = NEP (f, p) * S (p) Vn (f) *** (1) = S () GI - V (f) * Ssi () NEP (f, ) : NEP at frequency and wavelength to be detected NEP (f, p): NEP at peak wavelength (See Figures 4) GI-V(f) : Current-to-voltage conversion gain (See Figure 2) Ssi () : Sensitivity of Si photodiode S () : Sensitivity of S8745-01 and S8746-01 (See Figure 1.) S (p) : Sensitivity of S8745-01 and S8746-01 at peak wavelength, 0.5 V/nW Vn (f) : Output noise voltage (See Figure 3) Figure 4 NEP vs. frequency S8745-01 106 [Typ. Ta=25 C, Vcc=15 V, Cf=5 pF (built-in), RL=1 M, dark state, l=lp] S8746-01 106 [Typ. Ta=25 C, Vcc=15 V, Cf=5 pF (built-in), RL=1 M, dark state, l=lp] +1 M (EXTERNAL CONNECTED) +11 M (EXTERNAL CONNECTED) +111 M (EXTERNAL CONNECTED) 105 +1 M (EXTERNAL CONNECTED) +11 M (EXTERNAL CONNECTED) +111 M (EXTERNAL CONNECTED) 105 NEP (fW/Hz1/2) NEP (fW/Hz1/2) 104 104 103 103 102 102 101 0.001 S8745-01 0.01 0.1 1 10 100 1000 S8746-01 101 0.001 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) KSPDB0237EA FREQUENCY (kHz) KSPDB0238EA 3 Si photodioe with preamp Figure 5 Application circuit example S8745-01 Vcc+ S8745-01, S8746-01 Rf (EXTERNAL CONNECTED) 0.1 F TO-5 PACKAGE Rf=1 G (BUILT-IN) Cf=5 pF (BUILT-IN) - WINDOW (QUARTZ) PHOTODIODE + RL RL is the input impedance to the next-stage circuit when viewed from the OUT terminal. 0.1 F NC VccKSPDC0048EA S8746-01 Vcc+ Rf (EXTERNAL CONNECTED) 0.1 F TO-8 PACKAGE Rf=1 G (BUILT-IN) Cf=5 pF (BUILT-IN) - WINDOW (QUARTZ) PHOTODIODE + RL RL is the input impedance to the next-stage circuit when viewed from the OUT terminal. 0.1 F NC VccKSPDC0049EA S8745-01 and S8746-01 use a package with the guard ring effect provided. To make it effective during measurement, the package leads (pin 5 for S8745-01; pins 5 and 11 for S8746-01) should be connected to the ground line. When a feedback resistor is externally connected, it is necessary to provide a guard ring on the circuit board or to provide a teflon standoff for the leads. Note) A tantalum or ceramic capacitor of 0.1 to 10 F must be connected to the supply voltage leads (pins 3 and 9 for S8745-01; pins 1 and 4 for S8746-01) as a bypass capacitor used to prevent the device from oscillation. 4 Si photodioe with preamp Figure 6 Dimensional outlines (unit: mm) S8745-01 9.15 0.2 WINDOW 3.0 0.1 6.4 0.2 S8745-01, S8746-01 S8746-01 15.2 0.3 14.0 0.2 WINDOW 10.0 0.2 5.1 0.2 3.45 (13.5) 8.2 0.1 0.45 LEAD 0.5 MAX. PHOTOSENSITIVE SURFACE 4.7 PHOTOSENSITIVE SURFACE (20) 0.45 LEAD NC NC Vcc+ OUT CASE -IN NC +IN VccGND 5.08 0.2 5.84 0.2 1.2 MAX. Vcc+ NC NC VccCASE +IN NC NC -IN GND CASE OUT 5.08 0.2 BOTTOM VIEW 10.16 0.2 BOTTOM VIEW KSPDA0158EA KSPDA0159EA Precautions for Use q ESD S8745-01 and S8746-01 may be damaged or their performance may deteriorate by such factors as electro static discharge from the human body, surge voltages from measurement equipment, leakage voltages from soldering irons and packing materials. As a countermeasure against electro static discharge, the device, operator, work place and measuring jigs must all be set at the same potential. The following precautions must be observed during use: * To protect the device from electro static discharge which accumulate on the operator or the operator's clothes, use a wrist strap or similar tools to ground the operator's body via a high impedance resistor (1 M). * A semiconductive sheet (1 M to 100 M) should be laid on both the work table and the floor in the work area. * When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10 M. * For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use one with a resistance of 0.1 M/cm2 to 1 G/cm2. q Wiring If electric current or voltage is applied in reverse polarity to an electronic device such as a preamplifier, this can degrade device performance or destroy the device. Always check the wiring and dimensional outline to avoid misconnection. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 10.16 0.2 Cat. No. KSPD1065E01 Dec. 2004 DN 5 |
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