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AO4706 N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
TM
General Description
SRFET The AO4706 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4706 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V ID =16.5A (VGS = 10V) RDS(ON) < 6.8m (VGS = 10V) RDS(ON) < 8.2m (VGS = 4.5V)
UIS TESTED! Rg,Ciss,Coss,Crss Tested
D
S S S G
D D D D
G S
SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain AF Current Pulsed Drain Current B Avalanche Current
B B
Maximum 30 12 16.5 13.2 100 30 135 3.1 2.0 -55 to 150
Units V V A A A mJ W C
VGS TA=25C TA=70C IDSM IDM IAR EAR PDSM TJ, TSTG
Repetitive avalanche energy L=0.3mH TA=25C Power Dissipation TA=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Lead
C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 31 59 16
Max 40 75 24
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4706
Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=15A Forward Transconductance Diode Forward Voltage VDS=5V, ID=16.5A IS=1A,VGS=0V Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V TJ=125C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=16.5A TJ=125C 1.5 100 5.6 8.4 6.8 112 0.37 0.5 5 4000 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 520 217 0.6 59 VGS=10V, VDS=15V, ID=17A 27 12 11 9 VGS=10V, VDS=15V, RL=0.9, RGEN=3 IF=16.5A, dI/dt=300A/s 9 37 8 17 21 20 0.9 77 35 5000 6.8 10.5 8.2 1.85 Min 30 0.02 10 0.1 20 0.1 2.4 Typ Max Units V mA A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=16.5A, dI/dt=300A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150C. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. Rev1: June 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4706
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 4.5V 80 3.5V 25 20 60 ID (A) ID(A) 10V 15 10 20 VGS=3V 5 0 0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 VDS (Volts) Figure 1: On-Region Characteristics 8 Normalized On-Resistance 2 1.8 ID=17A 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25 30 0 30 60 90 120 150 180 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V VGS=4.5V ID=15A VGS(Volts) Figure 2: Transfer Characteristics 125 25C VDS=5V 30
40
0
7 RDS(ON) (m )
VGS=4.5V
6
5
VGS=10V
4
15 ID=17A 12 RDS(ON) (m ) IS (A) 125C 9
1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C
6
3 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4706
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 Capacitance (pF) VGS (Volts) 6 4 2 1000 0 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 VGS=15V ID=17A 5000 4000 3000 2000 Crss Coss Ciss 7000 6000
1000.0 100.0 100 ID (Amps) Power (W) 10.0 0.1s 1.0 0.1 0.0 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 RDS(ON) limited 10ms DC 1ms 10s
100 90 80 70 60 50 40 30 TJ(Max)=150C TA=25C 20 10 0 1E-04 0.001 0.01 0.1 1 10 100 1000 TJ(Max)=150C TA=25C
Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W 0.001 0.01 0.1 1 PD Ton T 100 1000
0.01 Single Pulse 0.001 0.00001
0.0001
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4706
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01 0.9 0.8 1.0E-02 VDS=24V VSD(V) 1.0E-03 IR (A) VDS=12V 0.7 0.6 0.5 0.4 0.3 0.2 1.0E-05 0.1 0 100 150 200 Temperature (C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature 60 50 40 Qrr (nC) 30 Qrr 20 Irm 10 0 0 5 10 15 20 25 30 Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25C di/dt=1000A/us 125C 15 25C 125C 12 trr (ns) Irm (A) 9 6 3 0 3 0 0 5 10 15 20 25 30 Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current S 125C 0 12 9 6 25C 0.5 18 0 50 0 100 150 200 Temperature (C) Figure 13: Diode Forward voltage vs. Junction Temperature 2.5 di/dt=1000A/us 125C 2 1.5 1 S 2.5 125C Is=20A 25C 2 1.5 trr S 125C 1 0.5 1000 0 1200 50 IS=1A 10A 5A 20A
1.0E-04
1.0E-06
15
trr
25C
50 45 40 35 Qrr (nC) 30 25 20 15 10 5 0 0 200 400 600 800 1000 Irm Qrr 25C 125 Is=20A 125C 25C
15 12 9 6 3 0 1200
27 24 21 18 trr (ns) 15 12 9 6 3 0 0 200 400 600 800 25C
Irm (A)
di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt
di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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