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PD- 96128
SMPS MOSFET
IRF7478QPBF
HEXFET(R) Power MOSFET
l l l l l l l l
Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150C Operating Temperature Automotive [Q101] Qualified Lead-Free
VDSS
60V
RDS(on) max (mW)
26@VGS = 10V 30@VGS = 4.5V
A A D D D D
ID
4.2A 3.5A
S S S G
1 2 3 4
8 7
Description
Specifically designed for Automotive applications. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
6 5
Top View
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
7.0 5.6 56 2.5 0.02 20 3.7 -55 to + 150 300 (1.6mm from case )
Units
A W W/C V V/ns C
Thermal Resistance
Symbol
RJL RJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
--- ---
Max.
20 50
Units
C/W
Notes through are on page 8
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1
09/04/07
IRF7478QPBF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 60 --- --- --- 1.0 --- --- --- --- Typ. --- 0.065 20 23 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 26 VGS = 10V, ID = 4.2A m 30 VGS = 4.5V, ID = 3.5A 3.0 V VDS = VGS, ID = 250A 20 VDS = 48V, VGS = 0V A 100 VDS = 48V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 17 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 21 4.3 9.6 7.7 2.6 44 13 1740 300 37 1590 220 410 Max. Units Conditions --- S VDS = 50V, ID = 4.2A 31 ID = 4.2A --- nC VDS = 48V --- VGS = 4.5V --- VDD = 30V --- ID = 4.2A ns --- R G = 6.2 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 48V, = 1.0MHz --- VGS = 0V, VDS = 0V to 48V
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
140 4.2
Units
mJ A
Diode Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 52 100 2.3 A 56 1.3 78 150 V ns nC
2
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 4.2A, VGS = 0V TJ = 25C, IF = 4.2A di/dt = 100A/s
D
S
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IRF7478QPBF
100
VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
10
10
2.7V
2.7V
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
T J = 150C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 7.0A
ID, Drain-to-Source Current ()
2.0
1.5
10
T J = 25C
1.0
0.5
1 2.5 3.0
VDS = 25V 20s PULSE WIDTH
3.5 4.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7478QPBF
100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd
10
ID = 4.2A
VGS , Gate-to-Source Voltage (V)
10000
8
VDS = 48V VDS = 30V VDS = 12V
C, Capacitance(pF)
Ciss
1000
6
Coss
100
4
Crss
2
10 1 10 100
0
0
10
20
30
40
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
I D , Drain Current (A)
TJ = 150 C
100 10us 10 100us 1ms 1 10ms
1
TJ = 25 C
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8 2.2
0.1
TA = 25 C TJ = 150 C Single Pulse
1 10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7478QPBF
8.0
VDS
6.0
RD
VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
ID , Drain Current (A)
D.U.T.
+
-V DD
4.0
2.0
Fig 10a. Switching Time Test Circuit
VDS 90%
0.0
25
50
TC , Case Temperature ( C)
75
100
125
150
Fig 9. Maximum Drain Current Vs. Ambient Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100
Thermal Response (Z thJA )
0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7478QPBF
RDS(on) , Drain-to -Source On Resistance ( )
RDS (on) , Drain-to-Source On Resistance ( )
0.028 0.026 0.024 0.022 0.020 0.018 VGS = 10V 0.016 0 10 20 30 40 50 60 ID , Drain Current (A)
0.04
VGS = 4.5V
0.03
0.02
ID = 7.0A
0.01 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
VG
EAS , Single Pulse Avalanche Energy (mJ)
400
VGS
3mA
TOP
300
Charge
IG ID
BOTTOM
ID 1.9A 3.4A 4.2A
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
200
15V
100
V(BR)DSS tp
VDS L
DRIVER
RG
20V
D.U.T
IAS
+ V - DD
0
A
25
50
75
100
125
150
I AS
tp
0.01
Starting TJ , Junction Temperature ( C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF7478QPBF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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7
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF7478QPBF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board Coss eff. is a fixed capacitance that gives the same charging time ISD 4.2A, di/dt 160A/s, VDD V(BR)DSS,
TJ 150C as Coss while VDS is rising from 0 to 80% VDSS
RG = 25, IAS = 4.2A. Pulse width 400s; duty cycle 2%.
Starting TJ = 25C, L = 16mH
Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2007
8
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