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| NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P1103BVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS 30 RDS(ON) 11m ID 11A D G : GATE D : DRAIN S : SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range 1 SYMBOL VDS VGS LIMITS 30 20 11 12 100 2.5 3.0 -55 to 150 UNITS V V TC = 25 C TC = 90 C ID IDM A TC = 25 C TC = 90 C PD Tj, Tstg W C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RJA TYPICAL MAXIMUM 50 UNITS C / W Pulse width limited by maximum junction temperature. Duty cycle 1% ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 55 C VGS = 4.5V, ID = 10A RDS(ON) gfs VGS = 10V, ID = 11A VDS = 15V, ID = 10A 13 9 38 30 1 1.5 2.5 100 1 10 16.5 11 m S nA A V LIMITS UNIT MIN TYP MAX Drain-Source On-State Resistance1 Forward Transconductance1 1 SEP-22-2004 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P1103BVG SOP-8 Lead-Free DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge Gate-Drain Charge2 Turn-On Delay Time Rise Time 2 2 2 Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDS = 15V , RL = 25 ID 1A, VGS = 10V, RGEN = 6 VDS = 0.5V(BR)DSS, VGS = 10V, ID = 10A VGS = 0V, VDS = 15V, f = 1MHz 1800 720 15 17 3.4 5.1 8.6 21 43 10 nS 26 nC pF Turn-Off Delay Time2 Fall Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current Pulsed Current 3 IS ISM VSD trr IF = 1A, VGS = 0V IF = 2.3A, dlF/dt = 100A / S 50 2.5 5 1.1 80 A V nS Forward Voltage1 Reverse Recovery Time 1 2 Pulse test : Pulse Width 300 sec, Duty Cycle 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH "P1103BVG", DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXXG parts name. 2 SEP-22-2004 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P1103BVG SOP-8 Lead-Free 3 SEP-22-2004 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P1103BVG SOP-8 Lead-Free 4 SEP-22-2004 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P1103BVG SOP-8 Lead-Free SOIC-8 (D) MECHANICAL DATA mm Dimension Min. A B C D E F G 1.35 0.1 4.8 3.8 5.8 0.38 Typ. 4.9 3.9 6.0 0.445 1.27 1.55 0.175 1.75 0.25 Max. 5.0 4.0 6.2 0.51 H I J K L M N 0 Dimension Min. 0.5 0.18 Typ. 0.715 0.254 0.22 4 8 Max. 0.83 0.25 mm 5 SEP-22-2004 |
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