View FS30KM-03_4132538.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MITSUBISHI Nch POWER MOSFET
FS30KM-03
HIGH-SPEED SWITCHING USE
FS30KM-03
OUTLINE DRAWING
10 0.3
6.5 0.3 3 0.3
Dimensions in mm
2.8 0.2
15 0.3
f 3.2 0.2
14 0.5
3.6 0.3
1.1 0.2 1.1 0.2 0.75 0.15
E
0.75 0.15
2.54 0.25
2.54 0.25
4.5 0.2
123
2.6 0.2
10V DRIVE VDSS .................................................................................. 30V rDS (ON) (MAX) .............................................................. 46m ID ......................................................................................... 30A Integrated Fast Recovery Diode (TYP.) ............. 45ns Viso ................................................................................ 2000V
w
q
q GATE w DRAIN e SOURCE
e
TO-220FN
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 30H VGS = 0V VDS = 0V
Conditions
Ratings 30 20 30 120 30 30 120 20 -55 ~ +150
Unit V V A A A A A W C C V g
Feb.1999
AC for 1minute, Terminal to case Typical value
-55 ~ +150 2000 2.0
MITSUBISHI Nch POWER MOSFET
FS30KM-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 10V ID = 15A, VGS = 10V ID = 15A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 30 -- -- 2.0 -- -- -- -- -- -- -- Typ. -- -- -- 3.0 36 0.54 11 600 250 110 18 65 30 25 1.0 -- 45 Max. -- 0.1 0.1 4.0 46 0.69 -- -- -- -- -- -- -- -- 1.5 6.25 --
Unit V A mA V m V S pF pF pF ns ns ns ns V C/W ns
Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 15V, ID = 15A, VGS = 10V, RGEN = RGS = 50
-- -- -- -- -- --
IS = 15A, VGS = 0V Channel to case IS = 15A, dis/dt = -50A/s
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 40 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 102 7 5 3 2 101 7 5 3 2
tw = 10ms
32
24
100ms 1ms 10ms
16
8
0
0
50
100
150
200
100 7 DC 5 TC = 25C 3 Single Pulse 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20
VGS = 20V 10V 8V PD = 20W 6V
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 50
VGS = 20V 10V Tc = 25C Pulse Test
8V
DRAIN CURRENT ID (A)
40
DRAIN CURRENT ID (A)
16
Tc = 25C Pulse Test
30
12
5V
20
6V
8
10
PD = 20W 4V
4
4V
0
0
1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30KM-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0
Tc = 25C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 50
TC = 25C Pulse Test VGS = 10V
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m)
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
4.0
40
3.0
30
20V
2.0
ID = 50A
20
1.0
30A 10A
10 0
0
0
4
8
12
16
20
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 40
Tc = 25C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = 5V 7 Pulse Test 5 4 3 2 101 7 5 4 3 2
DRAIN CURRENT ID (A)
24
16
FORWARD TRANSFER ADMITTANCE yfs (S)
32
8
TC = 25C 75C 125C
0
0
4
8
12
16
20
100 0 10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 103 7 5 3 2
Ciss Coss Crss
SWITCHING CHARACTERISTICS (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2 100 0 10 2 3 4 5 7 101
tr
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
td(off) tf td(on)
102 7 5 3 Tch = 25C 2 f = 1MHZ 101
VGS = 0V
Tch = 25C VDD = 15V VGS = 10V RGEN = RGS = 50
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30KM-03
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50
VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
20
Tch = 25C ID = 30A
16
VDS = 10V
SOURCE CURRENT IS (A)
40
12
20V 25V
30
TC = 125C
8
20
75C 25C
4
10
0
0
4
8
12
16
20
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10-1 -50 0 50 100 150 5.0
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
4.0
3.0
2.0
1.0
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 D = 1.0 5 0.5 3 2 0.2 100 7 5 3 2
0.1
tw
1.2
1.0
0.8
PDM
0.6
0.4
-50
0
50
100
150
10-1 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s)
Feb.1999
0.05 0.02 0.01 Single Pulse
T D= tw T
CHANNEL TEMPERATURE Tch (C)

▲Up To Search▲

Price & Availability of FS30KM-03

	To Download FS30KM-03 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .