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  Datasheet File OCR Text:
 SK30GD123
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMITOP(R) 3 IGBT Module
SK30GD123 Module Preliminary Data Inverse Diode
Features
Characteristics Symbol Conditions IGBT
min.
typ.
max.
Units
Typical Applications
GD
1
30-10-2006 DIL
(c) by SEMIKRON
SK30GD123
Characteristics Symbol Conditions Inverse Diode min. typ. max. Units
SEMITOP(R) 3 IGBT Module
SK30GD123 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
Preliminary Data
Features
Typical Applications
GD
2
30-10-2006 DIL
(c) by SEMIKRON
SK30GD123
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
30-10-2006 DIL
(c) by SEMIKRON
SK30GD123
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
30-10-2006 DIL
(c) by SEMIKRON
SK30GD123
UL recognized file no. E 63 532
5
30-10-2006 DIL
(c) by SEMIKRON


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