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TA8258HQ
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA8258HQ
Dual Audio Power Amplifier
The TA8258HQ is dual audio power amplifier for consumer applications. This IC provides an output power of 20 watts per channel (at VCC = 37 V, f = 1kHz, THD = 10%, RL = 8 ). It is suitable for power amplifier of music center.
Features
* * * * * * * * High output power: Pout = 20 W/channel (Typ.) (VCC = 37 V, RL = 8 , f = 1 kHz, THD = 10%) Low noise: Vno = 0.14 mVrms (Typ.) (VCC = 37 V, RL = 8 , GV = 34dB, Rg = 10 k, BW = 20 Hz~20 kHz) Very few external parts. Built in audio muting circuit. Built in thermal shut down protector circuit. Built in output shifted to GND protection circuit. (AC short) Available for using same PCB layout with: TA8200AH, TA8211AH, TA8216H Operation supply voltage range (Ta = 25C) : VCC (opr) = 15~42 V Weight: 4.04 g (typ.)
The TA8258HQ is plated with lead-free lead finishes, but the silicon pellet is attached to a heatsink with lead-containing solder paste.
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TA8258HQ
Block Diagram
VCC 6 Ripple Filter IN1 AMP1 5 3 1 9 VCC
IN1
4
OUT1
7 R RL
400 Pre-GND 400
20 k PW-GND 10 20 k AMP2 12
C C R OUT2
RL
IN2
2 IN2 Mute. TC 8 Mute 11
Application Information
1. Voltage gain
The closed loop voltage gain is determined by R1, R2.
Input Output
7/12
R + R2 (dB) G V = 20og 1 R2
4/2 5/1 R2 400 R1 20 k
20 k + 400 = 20og 400 = 34 (dB) R + R2 + R3 = 20 og 1 (dB) R2 + R3
Input
Figure 1
GV
When R3 = 220 GV 30 (dB) - is given.
4/2 R3 5/1 R2 400 R1 20 k
Output
7/12
Figure 2
Toshiba has confirmed that the GV (min) is approximately 28 (dB) on a regular printed circuit board. However, if the value of R2 + R3 is larger, the feedback voltage increases and oscillation will start. Determine the value of R2 + R3 to ensure proper startup behavior under actual usage conditions.
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2. Muting
(1) This product has an excellent muting system. Audio muting This IC is possible to make audio muting operation by using 11 pin muting terminal. Figure 3 shows the equivalent circuit in the muting circuit. By reducing the voltage of 11 pin to 2.8 V or less, Q1 will be ON. Also the base voltage of Q2 in the differential circuit that has Q2 and Q3 will be down. When Q2 is OFF, I2 and I5 dummy circuits will be operated, and it will shut down the input. However, the bias circuit is operating after muting, and it takes power supply current at no signal. 8 pin is the capacitor terminal for reducing the pop noise, and it can make the time constant longer by inserting the capacitor externally. If 11 pin is not used, connect 11 pin and 8 pin, then set the voltage abode 4 V. (2) IC internal muting at VCC OFF When VCC = 8 V or less at VCC off, the detection circuit at VCC off is operated. And the base voltage of Q1 is reduced and the muting is operated in IC.
Dummy amp.
Main amp. 9 VCC
Reference voltage The detection circuit at VCC OFF Q1 100
I1
I2
I3
I4
I5
I6
I7
Q5
30 k
30 k
Q2
Q3
Q6 The reference voltage is equal. Q4
Q7
Q8
Q9
20 k OUT 400
7/12
Q10
Q11
11 Mute
8 Mute. TC
2/4 IN
1/5 NF
Figure 3
3. The Mounting Place of an Integrated Circuit
This IC cannot withstand the strong electromagnetic fields generated by a CRT. These are likely to cause the device to exhibit malfunctions such as leakage. Please ensure that the IC is kept away from CRT.
4. Preventive Measures Against Oscillation
To prevent oscillation, it is advisable to use capacitors made of polyester film, which have low temperature and frequency fluctuation characteristics, as C. The resistance R in series with C performs phase correction at high frequencies and improves the oscillation allowance. (1) Capacitor rating and type (2) PCB layout
Note 1: Since the oscillation allowance varies according to the PCB layout, it is recommended that a standard Toshiba PCB be used as a reference for design.
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5. Heat-sink
Be aware of the heat-sink capacity. Use a heat-sink that has high heat conduction.
Note 2: Please connected a Heat-sink to GND potential, otherwise THD may deteriorate.
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Standard PCB
12 1
IN-2
GND
IN-1
TA8200AH/11AH/16H/58H
TOSHIBA
OUT2
OUT1
VCC
(bottom view)
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Maximum Ratings (Ta = 25C)
Characteristics Supply voltage Output current (Peak/ch) Power dissipation Operation temperature Storage temperature Symbol VCC IO (peak) PD (Note 3) Topr Tstg Rating 50 3.5 25 -20 to 75 -55 to 150 Unit V A W C C
Note 3: Derated above Ta = 25C in the proportion of 200 mW/C.
Electrical Characteristics
Characteristics Quiescent current Output power Total harmonic distortion Voltage gain Input resistance Ripple rejection ratio Output noise voltage Cross talk Mute on voltage Mute off voltage Mute ATT
(unless otherwise specified VCC = 37 V, RL = 8 , Rg = 600 , f = 1 kHz, Ta = 25C)
Symbol ICCQ Pout (1) Pout (2) THD GV RIN R.R. Vno C.T. Mute-on Mute-off ATT Test Circuit Vin = 0 THD = 10% THD = 1% Pout = 2 W Vout = 0.775 Vrms (0dBm) fripple = 100 Hz Vripple = 0.775 Vrms (0dBm) Rg = 10 k, BW = 20 Hz~20 kHz Rg = 10 k, Vout = 0.775 Vrms (0dBm) Mute on Mute off Vout = 0.775 Vrms Mute Test Condition Min 17 32.5 -48 -50 GND 3.7 -50 Typ. 75 20 15 0.05 34.0 30 -60 0.14 -60 -60 Max 130 0.2 35.5 0.3 1.4 10 Unit mA W % dB k dB mVrms dB V V dB
Typ. DC Voltage of Each Terminal (VCC = 28 V, Ta = 25C)
Terminal No. DC voltage (V) 1 2.5 2 2.8 3 GND 4 2.8 5 2.5 6 12.5 7 19.4 8 5.1 9 VCC 10 GND 11 4.8 12 19.4
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Test Circuit
1000 F 47 F VCC
6 Ripple Filter 4 IN1 AMP1 5 3 1 400 Pre-GND 400 20 k AMP2 2.2 F 2 IN2 Mute. TC 8 10 F *1 20 k
9
2.2 F
OUT1
1000 F 2.2 7
PW-GND 10 2.2
0.12 F 0.12 F
47 F 47 F
RL
RL
OUT2 Mute 11
12
1000 F
Vth 2.8 V -
*1: The capacitor for reducing POP noise at mute ON.
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THD - Pout
100 VCC = 37 V 50 R = 8 L 30 Filter 100: ~30 k 1 k: 400~30 k 10 k: 400~ 10 5 3 1 0.5 0.3 f = 10 kHz 0.1 100 Hz 0.05 0.03 0.1 0.3 0.5 1 1 kHz 100 50 30 10 5 3 RL = 8 f = 1 kHz Filter: 400~30 k
THD - Pout
(%)
Total harmonic distortion THD
Total harmonic distortion THD
(%)
VCC = 15 V 1 0.5 0.3 0.1 0.05 0.03 0.1 0.3 0.5 1 3 5 10
37
42
3
5
10
30 50
100
30 50
100
Output power
POUT
(W)
Output power
POUT
(W)
THD - f
10 5 3 RL = 8 Pout = 1 W VCC = 37 V Filter ~30 k (f = 20~800) 400~30 k (f = 1 k~2 k) 400~80 k (f = 4 k~6 k) 400~ (f = 8 k~40 k) 45
GV - f
RL = 8 Vout = 0.775 Vrms VCC = 37 V
(%)
40
Total harmonic distortion THD
1 0.5 0.3
GV (dB) Voltage gain
1k 3k 10k 30k 100k
35
30
0.1 0.05 0.03 0.01 30 OUT2 OUT1
25
20
100
300
15 20 30
100
300
1k
3k
10k
30k
100k
Frequency f
(Hz)
Frequency f
(Hz)
R.R. - f
0 -10 -20 -30 -40 -50 -60 -70 -80 OUT2 Rg = 620 RL = 8 Vripple = 0.775Vrms VCC = 37 V -30
R.R. - Rg
fripple = 100 Hz RL = 8 Vripple = 0.775Vrms VCC = 37 V
(dB)
(dB) R.R. Ripple rejection ratio
-40
R.R.
Ripple rejection ratio
-50
OUT1
-60
OUT2 OUT1
-70
30
100
300
1k
3k
10k
30k
100k
-80
30
100
0.3
1k
3k
10k
30
100k
Frequency f
(Hz)
Signal source resistance Rg
()
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C.T. - f
0 -10 -20 -30 -40 -50 -60 -70 -80 OUT2 OUT1 Rg = 620 k RL = 8 VCC = 37 V -30
C.T. - Rg
f = 1 kHz RL = 8 VCC = 37 V Vout = 0.775Vrms
-40
Cross talk C.T. (dB)
Cross talk C.T. (dB)
-50
-60
OUT2 OUT1 OUT1 OUT2
-70 OUT1 OUT2 -80
30
100
300
1k
3k
10k
30k
100k
30
100
300
1k
3k
10k
30k
100k
Frequency f
(Hz)
Signal source resistance Rg
()
Vno - Rg
800 35 RL = 8 VCC = 37 V B.W = 20Hz~20kHz 30 f = 1 kHz RL = 8 THD = 10 %
Pout - VCC
(mVrms)
700 600 500 400 300 200
(W) Output power Pout
OUT2 OUT1 30 100 300 1k 3k 10k 30k 100k
25 20 15 10 5 0 10
Output noise voltage VNO
100 0
5
10
15
20
25
30
35
40
45
Signal source resistance Rg
()
Supply voltage
VCC
(V)
ICCQ, VOUT - VCC
120 RL = 8 VCC = 37 V Vin = 0 80 40 60 25
PD - POUT
42 V f = 1 kHz RL = 8
(mA)
Output DC voltage VOUT (V)
(W)
100
20 37 V 15
ICCQ
Quiescent current
60 ICCQ 40 VOUT 20
Power dissipation PD
10
20
5 15 V
0 0
10
20
30
40
50
0 60
0 0
5
10
15
20
25
Supply voltage
VCC
(V)
Output power Pout
(W)
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ATT - Vmute
10 f = 1 kHz RL = 8 Vout = 0.775Vrms VCC = 37 V RL = 8 VCC = 37 V f = 1 kHz Pout = 2 W
THD - Ta
-20
Total harmonic distortion THD
0
(%)
0.2 0.1 0.05 0.03
Mute ATT (dB)
-40
OUT2 OUT1
-60
-80 8
1
2
3
4
0.01 -40
-20
0
20
40
60
80
100
Mute control voltage
Vmute (V)
Ambient temperature
Ta (C)
R.R. - Ta
0 Rg = 620 -10 -20 -30 -40 -50 -60 -70 -80 -40 OUT2 RL = 8 Vripple = 0.775 Vrms VCC = 37 V fripple = 100 Hz 100
ICCQ - Ta
VCC = 37 V RL = 8
(dB)
(mA) ICCQ Quiescent current
OUT1
Ripple rejection ratio
R.R.
80
60
40
20
-20
0
20
40
60
80
100
0 -40
-20
0
20
40
60
80
100
Ambient temperature
Ta (C)
Ambient temperature
Ta (C)
PD MAX - Ta
30
(w)
1: INFINITE HEAT SINK 25 1 2: 4.1C/W A HEAT SINK 3: 9.5C/W A HEAT SINK
Allowable power dissipation PD MAX
20 2 15 3
10
5
0 0
25
50
75
100
125
150
175
Ambient temperature
Ta (C)
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Package Dimensions
Weight: 4.04 g (typ.)
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* Strong Electrical and Magnetic Fields
Devices exposed to strong magnetic fields can undergo a polarization phenomenon in their plastic material, or within the chip, which gives rise to abnormal symptoms such as impedance changes or increased leakage current. Failures have been reported in LSIs mounted near malfunctioning deflection yokes in TV sets. In such cases the device's installation location must be changed or the device must be shielded against the electrical or magnetic field. Shielding against magnetism is especially necessary for devices used in an alternating magnetic field because of the electromotive forces generated in this type of environment.
* Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case of over current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required. * If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. For details on how to connect a protection circuit such as a current limiting resistor or back electromotive force adsorption diode, refer to individual IC datasheets or the IC databook. IC breakdown may cause injury, smoke or ignition. * Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition. * Carefully select external components (such as inputs and negative feedback capacitors) and load components (such as speakers), for example, power amp and regulator. If there is a large amount of leakage current such as input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to a speaker with low input withstand voltage, overcurrent or IC failure can cause smoke or ignition. (The over current can cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load (BTL) connection type IC that inputs output DC voltage to a speaker directly. * Over current Protection Circuit Over current protection circuits (referred to as current limiter circuits) do not necessarily protect ICs under all circumstances. If the Over current protection circuits operate against the over current, clear the over current status immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the over current protection circuit to not operate properly or IC breakdown before operation. In addition, depending on the method of use and usage conditions, if over current continues to flow for a long time after operation, the IC may generate heat resulting in breakdown. * Thermal Shutdown Circuit Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the Thermal shutdown circuits operate against the over temperature, clear the heat generation status immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the thermal shutdown circuit to not operate properly or IC breakdown before operation. * Heat Radiation Design When using an IC with large current flow such as power amp, regulator or driver, please design the device so that heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, please design the device taking into considerate the effect of IC heat radiation with peripheral components. * Installation to Heat Sink Please install the power IC to the heat sink not to apply excessive mechanical stress to the IC. Excessive mechanical stress can lead to package cracks, resulting in a reduction in reliability or breakdown of internal IC chip. In addition, depending on the IC, the use of silicon rubber may be prohibited. Check whether the use of silicon rubber is prohibited for the IC you intend to use, or not. For details of power IC heat radiation design and heat sink installation, refer to individual technical datasheets or IC databooks.
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice. 021023_D
060116EBF
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. 021023_A * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. 021023_B * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. 021023_C * The products described in this document are subject to the foreign exchange and foreign trade laws. 021023_E * This product generates heat during normal operation. However, substandard performance or malfunction may cause the product and its peripherals to reach abnormally high temperatures. The product is often the final stage (the external output stage) of a circuit. Substandard performance or malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the product. 030619_R
About solderability, following conditions were confirmed
* Solderability
(1) Use of Sn-37Pb solder Bath * solder bath temperature = 230C * dipping time = 5 seconds * the number of times = once * use of R-type flux (2) Use of Sn-3.0Ag-0.5Cu solder Bath * solder bath temperature = 245C * dipping time = 5 seconds * the number of times = once * use of R-type flux
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