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| PD - 95024 IRF7822PBF HEXFET(R) Power MOSFET for DC-DC Converters * * * * * N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free S S S G 1 2 3 4 8 7 A D D D D 6 5 Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7822 has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7822 offers particulary low RDS(on) and high Cdv/ dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application. SO-8 T o p V ie w DEVICE CHARACTERISTICS IRF7822 RDS(on) QG Qsw Qoss 5.0m 44nC 12nC 27nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain Current Power Dissipation TA = 25C TA = 70C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead RJA RJL Max. 40 20 Units C/W C/W TJ, TSTG IS ISM TA = 25C TA = 70C IDM PD Symbol VDS VGS ID IRF7822 30 12 18 13 150 3.1 3.0 -55 to 150 3.8 150 C A W A Units V www.irf.com 1 9/30/04 IRF7822PBF Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Static Drain-Source on Resistance Gate Threshold Voltage Drain-Source Leakage Current BVDSS RDS(on) VGS(th) IDSS 1.0 30 150 IGSS QG QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf Ciss Coss - - - (off) Min 30 Typ - 5.0 Max - 6.5 Units V m V A nA Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 15A VDS = VGS,ID = 250A VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, Tj = 100C VGS = 12V VGS=5.0V, ID=15A, VDS =16V VGS = 5.0V, VDS< 100mV VDS = 16V, ID = 15A Current* Gate-Source Leakage Current Total Gate Chg Cont FET Total Gate Chg Sync FET Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Chg(Qgs2 + Qgd) Output Charge Gate Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance 100 44 38 13 3.0 9.0 12 27 1.5 15 5.5 22 12 5500 1000 300 - - - 60 nC VDS = 16V, VGS = 0 VDD = 16V, ID = 15A ns VGS = 5.0V Clamped Inductive Load pF VDS = 16V, VGS = 0 Reverse Transfer Capacitance Crss Source-Drain Rating & Characteristics Parameter Diode Forward Voltage* Reverse Recovery Charge Reverse Recovery Charge (with Parallel Schottky) VSD Qrr Qrr(s) 120 108 Min Typ Max 1.0 Units V nC nC Conditions IS = 15A, VGS = 0V di/dt ~ 700A/s VDS = 16V, VGS = 0V, IS = 15A di/dt = 700A/s (with 10BQ040) VDS = 16V, VGS = 0V, IS = 15A Notes: 2 Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 s; duty cycle 2%. When mounted on 1 inch square copper board Typ = measured - Qoss Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and Q OSS measured at VGS = 5.0V, IF = 15A. www.irf.com IRF7822PBF 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 15A 6 I D = 15A VDS = 24V 5 1.5 VGS , Gate-to-Source Voltage (V) 4 1.0 2 0.5 1 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 0 0 10 20 30 40 50 TJ , Junction Temperature ( C) QG, Total Gate Charge (nC) Fig 1. Normalized On-Resistance Vs. Temperature Fig 2. Typical Gate Charge Vs. Gate-to-Source Voltage 100000 RDS(on) , Drain-to -Source On Resistance () 0.010 0.009 0.008 0.007 0.006 0.005 0.004 0.003 3.0 4.0 5.0 6.0 7.0 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd C, Capacitance(pF) 10000 Ciss ID = 15A 1000 Coss Crss 100 1 10 100 VDS, Drain-to-Source Voltage (V) VGS, Gate -to -Source Voltage (V) Fig 3. On-Resistance Vs. Gate Voltage Fig 4. Typical Capacitance Vs. Drain-to-Source Voltage www.irf.com 3 IRF7822PBF 100.00 100 ISD , Reverse Drain Current (A) ID, Drain-to-Source Current () T J = 175C 10 TJ = 150 C 10.00 T J = 25C TJ = 25 C 1 1.00 1.0 2.0 VDS = 15V 20s PULSE WIDTH 3.0 4.0 5.0 0.1 0.2 V GS = 0 V 0.5 0.7 1.0 1.2 VGS, Gate-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V) Fig 5. Typical Transfer Characteristics Fig 6. Typical Source-Drain Diode Forward Voltage 100 D = 0.50 (Z thJA ) 10 0.20 0.10 0.05 Thermal Response 1 0.02 0.01 P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T t1 / t 2 +TA 10 100 J = P DM x Z thJA 0.1 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse Duration (sec) Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com IRF7822PBF SO-8 Package Outline Dimensions are shown in milimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e K L y e1 A K x 45 C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A SUBS T RAT E. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 www.irf.com 5 IRF7822PBF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04 6 www.irf.com |
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