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SMPS MOSFET
PD - 95907
IRFPS29N60LPBF
Applications * Zero Voltage Switching SMPS * Telecom and Server Power Supplies * Uninterruptible Power Supplies * Motor Control applications * Lead-Free
HEXFET(R) Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
600V 175m 130ns 29A
Features and Benefits * SuperFast body diode eliminates the need for external diodes in ZVS applications. * Lower Gate charge results in simpler drive requirements. * Enhanced dv/dt capabilities offer improved ruggedness. * Higher Gate voltage threshold offers improved noise immunity.
Super-247TM
Absolute Maximum Ratings
Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V ID @ TC = 100C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TC = 25C Power Dissipation VGS dv/dt TJ TSTG Max. 29 18 110 480 3.8 30 15 -55 to + 150 300 (1.6mm from case ) 1.1(10) N*m (lbf*in) W W/C V V/ns C Units A
Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and
e
Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
IS ISM VSD trr Qrr IRRM ton
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ac Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- --- --- 130 240 630 9.4 29 A 110 1.5 190 360 950 14 V
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 29A, VGS = 0V
f
ns TJ = 25C, IF = 29A TJ = 125C, di/dt = 100A/s nC A
J
J
--- 1820 2720
f T = 25C, I = 29A, V = 0V f T = 125C, di/dt = 100A/s f
S GS
TJ = 25C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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09/15/04
IRFPS29N60LPBF
Static @ TJ = 25C (unless otherwise specified)
Symbol
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS RG
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance
Min. Typ. Max. Units
600 --- --- 3.0 --- --- --- --- --- --- 0.53 175 --- --- --- --- --- 0.86 --- --- 210 5.0 50 2.0 100 -100 --- V m V A mA nA
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 17A
V/C Reference to 25C, ID = 1mA
f
VDS = VGS, ID = 250A VDS = 600V, VGS = 0V VDS = 480V, VGS = 0V, TJ = 125C VGS = 30V VGS = -30V f = 1MHz, open drain
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. Coss eff. (ER)
Parameter
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Effective Output Capacitance (Energy Related)
Min. Typ. Max. Units
15 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 34 100 66 54 6160 530 44 250 190 --- 220 67 96 --- --- --- --- --- --- --- --- --- pF ns nC S ID = 29A
Conditions
VDS = 50V, ID = 17A VDS = 480V VGS = 10V, See Fig. 7 & 15 VDD = 300V ID = 29A RG = 4.3 VGS = 10V, See Fig. 11a & 11b VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V,VDS = 0V to 480V
f f
g
Avalanche Characteristics
Symbol
EAS IAR EAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentA Repetitive Avalanche Energy Typ. --- --- --- Max. 570 29 48 Units mJ A mJ
Thermal Resistance
Symbol
RJC RCS RJA
Parameter
Junction-to-Caseh Case-to-Sink, Flat, Greased Surface Junction-to-Ambienth
Typ.
--- 0.24 ---
Max.
0.26 --- 40
Units
C/W
Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Starting TJ = 25C, L = 1.5mH, RG = 25, IAS = 29A. (See Figure 12a) ISD 29A, di/dt 830A/s, VDD V(BR)DSS, TJ 150C.
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS. Coss eff.(ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90C
2
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IRFPS29N60LPBF
1000
TOP VGS 15V 10V 9.0V 7.0V 7.0V 5.5V 5.0V 4.5V
20s PULSE WIDTH Tj = 25C
ID, Drain-to-Source Current (A)
100
TOP VGS 15V 10V 9.0V 7.0V 7.0V 5.5V 5.0V 4.5V
ID, Drain-to-Source Current (A)
100
10
BOTTOM
10
BOTTOM
1
1
4.5V
0.1
4.5V
0.01 0.1 1 10 100 0.1 0.1 1
20s PULSE WIDTH Tj = 150C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
3.0
RDS(on) , Drain-to-Source On Resistance
ID = 28A
2.5
ID, Drain-to-Source Current ()
100.00
VGS = 10V
T J = 150C
10.00
2.0
(Normalized)
1.5
1.00
T J = 25C
1.0
0.10
VDS = 50V 20s PULSE WIDTH
0.01 4 6 8 10
0.5
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRFPS29N60LPBF
100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd
40 35 30
Energy (J)
10000
C, Capacitance(pF)
Ciss
25 20 15 10
1000
Coss
100
Crss
10 1 10 100 1000
5 0 0 100 200 300 400 500 600 700
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typ. Output Capacitance Stored Energy vs. VDS
20
VGS , Gate-to-Source Voltage (V)
1000.00
ID= 28A
ISD, Reverse Drain Current (A)
16
VDS= 480V VDS= 300V VDS= 150V
100.00
12
T J = 150C 10.00
8
4
1.00
T J = 25C
0 0 40 80 120 160 200 240
0.10 0.2 0.4 0.6 0.8 1.0 1.2
VGS = 0V
Q G Total Gate Charge (nC)
1.4
1.6
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 8. Typical Source-Drain Diode Forward Voltage
4
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IRFPS29N60LPBF
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain Current (A)
30
ID, Drain-to-Source Current (A)
25
100 20
10
100sec 1msec
15
10
1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1000 10000 VDS, Drain-to-Source Voltage (V)
5 10msec 0 25 50 75 100 125 150 T C , Case Temperature (C)
Fig 9. Maximum Safe Operating Area
Fig 10. Maximum Drain Current vs. Case Temperature
VDS VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
RD
VDS 90%
D.U.T.
+
-VDD
10% VGS
td(on) tr t d(off) tf
Fig 11a. Switching Time Test Circuit
Fig 11b. Switching Time Waveforms
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IRFPS29N60LPBF
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20 0.10 0.05
0.01
0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig 12. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5.0
VGS(th) Gate threshold Voltage (V)
4.0
ID = 250A
3.0
2.0
1.0 -75 -50 -25 0 25 50 75 100 125 150
T J , Temperature ( C )
Fig 13. Threshold Voltage vs. Temperature
6
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IRFPS29N60LPBF
1200
EAS , Single Pulse Avalanche Energy (mJ)
1000
ID TOP 13A 18A BOTTOM 29A
800
600
400
200
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Fig 14a. Maximum Avalanche Energy vs. Drain Current
15V
V(BR)DSS
VDS L
DRIVER
tp
RG
20V
D.U.T
IAS tp
+ - VDD
A
0.01
I AS
Fig 14b. Unclamped Inductive Test Circuit
Current Regulator Same Type as D.U.T.
Fig 14c. Unclamped Inductive Waveforms
50K 12V .2F .3F
QG
VGS V
D.U.T. + V - DS
QGS VG
QGD
VGS
3mA
IG
ID
Current Sampling Resistors
Charge
Fig 15a. Gate Charge Test Circuit
Fig 15b. Basic Gate Charge Waveform
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IRFPS29N60LPBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 16. For N-Channel HEXFET(R) Power MOSFETs
8
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IRFPS29N60LPBF
Case Outline and Dimensions -- Super-247
Super-247 (TO-274AA) Part Marking Information
EXAMPLE: THIS IS AN IRFPS37N50A WITH ASSEMBLY LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" PART NUMBER INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
IRFPS37N50A 719C 17 89
DATE CODE YEAR 7 = 1997 WEEK 19 LINE C
Note: "P" in assembly line position indicates "Lead-Free"
TOP
Super TO-247TM package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04
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