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Freescale Semiconductor Technical Data
Document Number: MRF9060N Rev. 10, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. * Typical Performance at 945 MHz, 26 Volts Output Power -- 60 Watts PEP Power Gain -- 18.0 dB Efficiency -- 40% (Two Tones) IMD -- - 31.5 dBc * Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power Features * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Integrated ESD Protection * 200_C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. * TO - 272 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF9060NR1 MRF9060NBR1
945 MHz, 60 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs
CASE 1265 - 08, STYLE 1 TO - 270- 2 PLASTIC MRF9060NR1
CASE 1337 - 03, STYLE 1 TO - 272- 2 PLASTIC MRF9060NBR1
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +65 - 0.5, + 15 223 1.79 - 65 to +150 200 Unit Vdc Vdc W W/C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (1) 0.56 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF9060NR1 MRF9060NBR1 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Charge Device Model MRF9060NR1 MRF9060NBR1 Class 1 (Minimum) M2 (Minimum) C6 (Minimum) C5 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 MRF9060NR1 MRF9060NBR1 1 3 260 260 Rating Package Peak Temperature Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 450 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1.3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) Dynamic Characteristics Input Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss -- -- -- 101 53 2.5 -- -- -- pF pF pF (continued) VGS(th) VGS(Q) VDS(on) gfs 2 3 -- -- 2.8 3.7 0.21 5.3 4 5 0.4 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
MRF9060NR1 MRF9060NBR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Functional Tests (In Freescale Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) Gps 17 18 -- dB Symbol Min Typ Max Unit
37
40
--
%
IMD
--
- 31.5
- 28
dBc
IRL
--
- 14.5
-9
dB
Gps
--
18
--
dB
--
40
--
%
IMD
--
- 31
--
dBc
IRL
--
- 12.5
--
dB
MRF9060NR1 MRF9060NBR1 RF Device Data Freescale Semiconductor 3
VGG C6 RF INPUT
B1 + C7 L1 C4 DUT Z11 Z1 C1 Z2 Z3 Z4 Z5 C2 Z6 Z7 Z8 C3 Z9 C5 Z10 C9 Z12 Z13 Z14 L2
B2 + C14 C15 + C16 + C17 RF OUTPUT Z15 Z16 Z17 Z18 C13 C8 C10 C11 C12 VDD
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9
0.240 x 0.060 Microstrip 0.240 x 0.060 Microstrip 0.500 x 0.100 Microstrip 0.100 x 0.270 x 0.080, Taper 0.330 x 0.270 Microstrip 0.120 x 0.270 Microstrip 0.270 x 0.520 x 0.140, Taper 0.240 x 0.520 Microstrip 0.340 x 0.520 Microstrip
Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18
0.060 x 0.520 Microstrip 0.360 x 0.270 Microstrip 0.060 x 0.270 Microstrip 0.130 x 0.060 Microstrip 0.300 x 0.060 Microstrip 0.210 x 0.060 Microstrip 0.600 x 0.060 Microstrip 0.290 x 0.060 Microstrip 0.340 x 0.060 Microstrip
Figure 1. 930 - 960 MHz Broadband Test Circuit Schematic Table 6. 930 - 960 MHz Broadband Test Circuit Component Designations and Values
Part B1 B2 C1, C7, C13, C14 C2, C3, C11 C4, C5 C6, C15, C16 C8, C9 C10 C12 C17 L1, L2 N1, N2 WB1, WB2 Board Material PCB Short Ferrite Bead Long Ferrite Bead 47 pF Chip Capacitors 0.8- 8.0 Gigatrim Variable Capacitors 11 pF Chip Capacitors (MRF9060NR1) 10 pF Chip Capacitors (MRF9060NBR1) 10 mF, 35 V Tantalum Chip Capacitors 10 pF Chip Capacitors 3.9 pF Chip Capacitor 1.7 pF Chip Capacitor 220 mF Electrolytic Chip Capacitor 12.5 nH Inductors N - Type Panel Mount, Stripline 15 mil Brass Wear Blocks 30 mil Glass Teflon(R), r = 2.55 Copper Clad, 2 oz Cu Etched Circuit Board RF - 35- 0300 TO - 270/TO - 272 Surface/Bolt Taconic DSelectronics Description 95F786 95F787 100B470JP 500X 44F3360 100B110JP 500X 100B100JP 500X 93F2975 100B100JP 500X 100B3R9CP 500X 100B1R7BP 500X 14F185 A04T- 5 3052- 1648- 10 Part Number Manufacturer Newark Newark ATC Newark ATC Newark Newark ATC ATC Newark Coilcraft Avnet
MRF9060NR1 MRF9060NBR1 4 RF Device Data Freescale Semiconductor
C6
C17
VGG
B1 B2 C7 C14 L1 C4 WB1 CUT OUT AREA C3 C5 WB2 C8 C9 C10 L2
VDD
C15 C16 OUTPUT C11 C12 C13
INPUT
C1
C2
MRF9060M MRF9060MB
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout
MRF9060NR1 MRF9060NBR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
19 18 G ps , POWER GAIN (dB) 17 16 15 14 13 IRL 12 11 930 935 940 945 950 955 Gps VDD = 26 Vdc Pout = 60 W (PEP) IDQ = 450 mA Two-Tone, 100 kHz Tone Spacing IMD -32 -34 -36 960 50 45 40 35 IMD, INTERMODULATION DISTORTION (dBc) -28 -30 -10 -12 -14 -16 -18 IRL, INPUT RETURN LOSS (dB) VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 100 , DRAIN EFFICIENCY (%) 625 mA 10 Pout, OUTPUT POWER (WATTS) PEP
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
19 IDQ = 625 mA 18.5 G ps , POWER GAIN (dB) 500 mA 18 450 mA -15 -20 -25 -30 -35 450 mA -40 -45 -50 -55 100 1 500 mA IDQ = 275 mA
17.5 275 mA 17 VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 1 10 Pout, OUTPUT POWER (WATTS) PEP
16.5
Figure 4. Power Gain versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
Figure 5. Intermodulation Distortion versus Output Power
20 60 Gps 50 40 30 20 VDD = 26 Vdc IDQ = 450 mA f = 945 MHz 10 10 0 100 , DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
-10 -20 -30 -40 -50 -60 7th Order -70 -80 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 5th Order VDD = 26 Vdc IDQ = 450 mA f1 = 945 MHz f2 = 945.1 MHz
18 G ps , POWER GAIN (dB) 3rd Order 16 14 12 10 8 0.1 1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Intermodulation Distortion Products versus Output Power
Figure 7. Power Gain and Efficiency versus Output Power
MRF9060NR1 MRF9060NBR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) , DRAIN EFFICIENCY (%) 20 18 G ps , POWER GAIN (dB) 16 14 12 10 8 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 VDD = 26 Vdc IDQ = 450 mA f1 = 945 MHz f2 = 945.1 MHz Gps 60 40 20 0 -20 IMD -40 -60
Figure 8. Power Gain, Efficiency, and IMD versus Output Power
1011 MTTF FACTOR (HOURS X AMPS2)
1010
109
108 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
MRF9060NR1 MRF9060NBR1 RF Device Data Freescale Semiconductor 7
f = 930 MHz f = 960 MHz Zsource
Zo = 2
Zload
f = 930 MHz
f = 960 MHz
VDD = 26 V, IDQ = 450 mA, Pout = 60 W PEP f MHz 930 945 960 Zsource 0.63 + j0.57 0.60 + j0.41 0.57 + j0.45 Zload 1.8 + j0.84 1.7 + j0.55 1.6 + j0.36
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 10. Series Equivalent Source and Load Impedance
MRF9060NR1 MRF9060NBR1 8 RF Device Data Freescale Semiconductor
NOTES
MRF9060NR1 MRF9060NBR1 RF Device Data Freescale Semiconductor 9
NOTES
MRF9060NR1 MRF9060NBR1 10 RF Device Data Freescale Semiconductor
NOTES
MRF9060NR1 MRF9060NBR1 RF Device Data Freescale Semiconductor 11
PACKAGE DIMENSIONS
MRF9060NR1 MRF9060NBR1 12 RF Device Data Freescale Semiconductor
MRF9060NR1 MRF9060NBR1 RF Device Data Freescale Semiconductor 13
MRF9060NR1 MRF9060NBR1 14 RF Device Data Freescale Semiconductor
2X
aaa
M
r1 CAB
DRAIN ID
B
E1
A
GATE LEAD
DRAIN LEAD
D1
2X
b1 aaa
M
CA
D
2
E
c1
H
DATUM PLANE
F ZONE "J"
A
A1 A2 7 Y E2 Y
C
SEATING PLANE
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. CROSSHATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 E E1 E2 F b1 c1 r1 aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .928 .932 .810 BSC .438 .442 .248 .252 .241 .245 .025 BSC .199 .193 .007 .011 .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 23.57 23.67 20.57 BSC 11.12 11.23 6.30 6.40 6.12 6.22 0.64 BSC 4.90 5.05 .28 .18 1.73 1.60 .10
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 1337 - 03 ISSUE C TO - 272 - 2 PLASTIC MRF9060NBR1
RF Device Data Freescale Semiconductor
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E2 VIEW Y - Y
PIN 3
1
NOTE 8
MRF9060NR1 MRF9060NBR1 15
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MRF9060NR1 MRF9060NBR1
Rev. 16 10, 5/2006 Document Number: MRF9060N
RF Device Data Freescale Semiconductor

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