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| SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM4K27CT Switching Applications * * Suitable for high-density mounting due to compact package Low on-resistance: Ron = 205 m (max) (@VGS = 4.0 V) Ron = 260 m (max) (@VGS = 2.5 V) 1.20.05 0.75 Unit: mm Top view 0.050.04 0.80.05 0.5 0.20.02 0.30.02 Ron = 390 m (max) (@VGS = 1.8 V) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 12 0.5 1.0 400 150 -55~150 Unit V V A mW C C Side view +0.02 0.38 -0.03 CST4 1 :Gate 2:Source 3,4:Drain Note: JEDEC Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 2-1M1A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 1.1 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm ) Marking (top view) Electrode Layout (bottom view) Equivalent Circuit (top view) 4 3 4 3 3 4 1 2 2 1 1 Polarity marking 1 2 3 4 Gate Source Drain Drain Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 0.0750.04 Absolute Maximum Ratings (Ta = 25C) SA 2 SSM4K27CT Electrical Characteristics (Ta=25C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth Yfs Test Condition VGS = 12 V, VDS = 0 ID = 1 mA, VGS = 0 ID = 1 mA, VGS = -12 V VDS = 20 V, VGS = 0 VDS = 3 V, ID = 1 mA VDS = 3 V, ID = 0.25 A ID = 0.25 A, VGS = 4 V Drain-Source on-resistance RDS (ON) ID = 0.25 A, VGS = 2.5 V ID = 0.10 A, VGS = 1.8 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, ID = 0.25 A, VGS = 0~2.5 V, RG = 4.7 (Note2) (Note2) (Note2) (Note2) Min - 20 10 - 0.5 0.8 Typ. Max 1 Unit A V A V S - - - - - 10 1.1 - 205 260 390 - - 1.6 175 200 250 174 25 31 16.4 17 m - - - - - - - - - - pF pF pF ns Note2: Pulse test Switching Time Test Circuit (a) Test Circuit 2.5 V 0 10 s VDD = 10 V RG = 4.7 D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25C out (b) VIN 2.5 V 10% 90% in RG 0V VDD (c) VOUT VDD 90% 10% tr ton tf toff VDS (ON) Precaution Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = 1mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device. 2 2007-11-01 SSM4K27CT ID - VDS 1.0 Common Source Ta = 25C 10000 Common Source 1000 VDS = 3 V ID - VGS ID 2.5V 0.6 1.8V 0.4 VGS = 1.2 V 0.2 (mA) ID (A) 0.8 4V 100 Ta = 85C 10 25C Drain current Drain current 1 -25C 0.1 0 0 0.2 0.4 0.6 0.8 1.0 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain - Source voltage VDS (V) Gate - Source voltage VGS (V) RDS (ON) - VGS 500 ID = 0.25 A Common Source 300 RDS (ON) - ID Drain - Source on-resistance RDS (ON) (m) 400 Drain - Source on-resistance RDS (ON) (m) 250 VGS = 1.8 V 200 2.5V 300 25C 200 Ta = 85C -25C 150 4V 100 Common Source Ta = 25C 100 50 0 0 2 4 6 8 10 12 0 0 0.2 0.4 0.6 0.8 1.0 Gate - Source voltage VGS (V) Drain current ID (A) RDS (ON) - Ta 500 Common Source 1.2 Vth - Ta Common Source Vth (V) Drain - Source on-resistance RDS (ON) (m) 400 1.0 VDS = 3V ID = 1mA 300 Gate threshold voltage ID = 0.1A / VGS = 1.8 V 0.8 0.6 200 0.25 A / 4 V 0.4 100 0.25 A / 2.5 V 0.2 0 -50 0 50 100 150 0 -25 0 25 50 75 100 125 150 Ambient temperature Ta (C) Ambient temperature Ta (C) 3 2007-11-01 SSM4K27CT (S) 30 10 |Yfs| - ID 500 300 C - VDS Yfs Ciss (pF) C 3 100 50 30 Coss Crss Forward transfer admittance 1 0.3 0.1 Common Source 0.03 0.01 VDS = 3V Ta = 25C 1 10 100 1000 10000 Capacitance 10 5 3 Common Source Ta = 25C f = 1 MHz VGS = 0 V 1 10 100 1 0.1 Drain current ID (mA) Drain - Source voltage VDS (V) Dynamic Input Characteristic 10 1000 9 8 7 6 5 4 3 2 1 0 Common Source ID = 0.5 A Ta = 25C 0 1 2 3 4 5 1 0.01 0.1 VDD = 10 V t - ID Common Source VDD = 10 V VGS = 0-2.5V Ta = 25C RG = 4.7 VGS (V) (ns) toff 100 Gate-Source voltage Switching time t tf 10 ton tr Total gate charge Qg (nC) 1 10 Drain current ID (A) PD - Ta IDR - VDS Drain power dissipation PD (W) 1.0 Common Source VGS = 0V 0.8 Ta = 25C 1.2 Mounted on FR4 board 1 (25.4 mm x 25.4 mm x 1.6 t, 2 Cu Pad: 645 mm ) (A) D IDR S IDR 0.8 Drain reverse current 0.6 G 0.6 0.4 0.4 0.2 0.2 0 0 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 50 100 150 Ambient temperature Ta (C) Drain-Source voltage VDS (V) 4 2007-11-01 SSM4K27CT RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01 |
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