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TLP331,TLP332 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP331,TLP332 Office Machine Household Use Equipment Programmable Controllers AC / DC-Input Module Telecommunication The TOSHIBA TLP331 and TLP332 consists of a gallium arsenide infrared emitting diode optically coupled to a photo-transistor in a six lead plastic DIP package. This photocoupler provides the unique feature of high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications. TLP332 is no-base internal connection for high-EMI environments. * * * * Collector-emitter voltage: 55V (min.) Isolation voltage: 5000Vrms (min.) UL recognized: UL1577, file no. E67349 Current transfer ratio TOSHIBA Weight: 0.4 g 11-7A8 Unit in mm Classi- fication (*) Rank BV Standard Current Transfer Ratio (min.) Ta = 25C Ta = -25~75C IF = 0.5mA IF = 1mA IF = 1mA VCE = 0.5V VCE = 1.5V VCE = 0.5V 200% 100% 100% 50% 100% 50% Marking Of Classi- Fication BV BV, blank Pin Configurations (top view) TLP331 1 6 1 TLP332 6 (*) Ex. Standard: TLP331 Rank BV: TLP331(BV) 2 5 2 5 (Note) Application type name for certification test, please use standard product type name, i.e. TLP331(BV): TLP331 3 1: ANODE 2: CATHODE 3: NC 4: EMITTER 5: COLLECTOR 6: BASE 4 3 1: ANODE 2: CATHODE 3: NC 4: EMITTER 5: COLLECTOR 6: NC 4 1 2007-10-01 TLP331,TLP332 Absolute Maximum Ratings (Ta = 25C) Characteristic Forward current Forward current derating (Ta 39C) LED Peak forward current (100s pulse, 100pps) Reverse Voltage Junction temperature Collector-emitter voltage Collector-base voltage (TLP331) Emitter-collector voltage Detector Emitter-base voltage (TLP331) Collector current Power dissipation Power dissipation derating (Ta 25C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10s) Total package power dissipation Total package power dissipation derating (Ta25C) Isolation voltage (AC, 1min., RH 60%) (Note 1) Symbol IF IF /C IFP VR Tj VCEO VCBO VECO VEBO IC PC PC / C Tj Tstg Topr Tsol PT PT/C BVS Rating 50 -0.7 1 5 125 55 80 7 7 50 150 -1.5 125 -55~125 -55~100 260 250 -2.5 5000 Unit mA mA / C A V C V V V V mA mW mW / C C C C C mW mW / C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF IC Topr Min. -- -25 Typ. 5 1.6 1 Max. 25 25 10 75 Unit V mA mA C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP331,TLP332 Individual Electrical Characteristics (Ta = 25C) Characteristic Forward voltage LED Reverse current Capacitance Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-base breakdown voltage (TLP331) Emitter-base breakdown voltage Detector (TLP331) Collector dark current Collector dark current (TLP331) Collector dark current (TLP331) DC forward current gain (TLP331) Capacitance (collector to emitter) Symbol VF IR CT Test Condition IF = 10mA VR = 5V V = 0, f = 1MHz Min. 1.0 55 7 80 7 Typ. 1.15 30 10 2 0.5 0.1 1000 12 Max. 1.3 10 100 50 10 Unit V A pF V V V V nA A A nA pF V(BR)CEO IC = 0.5mA V(BR)ECO IE = 0.1mA V(BR)CBO IC = 0.1mA V(BR)EBO IE = 0.1mA ICEO ICER ICBO hFE CCE VCE = 24V VCE = 24V, Ta = 85C VCE = 24V, Ta = 85C RBE = 1M VCB = 10V VCE = 5V, IC = 0.5mA V = 0 , f = 1MHz Coupled Electrical Characteristics (Ta = 25C) Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 1mA, VCE = 0.5V Rank BV IF = 0.5mA, VCE = 1.5V Rank BV IF = 1mA, VCB = 5V IC = 0.5mA IF = 1mA Collector-emitter saturation voltage VCE(sat) IC = 1mA IF = 1mA Rank BV Min. 100 200 50 100 Typ. 10 -- 0.2 Max. 1200 1200 0.4 0.4 V Unit % Low input CTR Base photo-current (TLP331) IC / IF(low) IPB % A Coupled Electrical Characteristics (Ta = 25~75C) Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 1mA, VCE = 0.5V Rank BV IF = 0.5mA, VCE = 1.5V Rank BV Min. 50 100 Typ. 50 100 Max. Unit % Low input CTR IC / IF(low) % 3 2007-10-01 TLP331,TLP332 Isolation Characteristics (Ta = 25C) Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1MHz V = 500V AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. 5x10 10 Typ. 0.8 10 14 Max. Unit pF Vrms Vdc 5000 10000 10000 Switching Characteristics (Ta = 25C) Characteristic Rise time Fall time Turn-on time Turn-off time Turn-on time Storage time Turn-off time Turn-on time Storage time Turn-off time Symbol tr tf ton toff tON tS tOFF tON tS tOFF (Fig.1) RL = 4.7k RBE = OPEN VCC = 5V, IF = 1.6mA (Fig.1) RL = 4.7k RBE = 470k (TLP331) VCC = 5V, IF = 1.6mA VCC = 10V IC = 2mA RL = 100 Test Condition Min. Typ. 8 8 10 8 10 50 300 12 30 100 Max. s s s Unit Fig. 1 Switching time test circuit IF RL VCC VCE IF tS VCE 4.5V 0.5V tOFF VCC RBE tON 4 2007-10-01 TLP331,TLP332 IF - Ta 100 200 PC - Ta Allowable forward current IF (mA) Allowable collector power Dissipation PC (mW) 0 20 40 60 80 100 120 80 160 60 120 40 80 20 40 0 -20 0 -20 0 20 40 60 80 100 120 Ambient temperature Ta (C) Ambient temperature Ta (C) IFP - DR 5000 3000 Pulse width100s Ta = 25C 1000 500 300 1000 500 300 Ta = 25C IF - V F Pulse forward current IFP (mA) (mA) Forward current IF 10-3 10-2 10-1 100 100 50 30 10 5 3 1 0.6 100 50 30 10 3 3 3 3 0.8 1.0 1.2 1.4 1.6 1.8 DUTY CYCLE RATIO DR Forward voltage VF (V) VF/Ta - IF -3.2 1000 IFP - VFP 500 300 Forward voltage temperature Coefficient VF / Ta (mV/C) -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 Pulse forward current IFP (mA) 100 50 30 10 5 3 1 0.6 Pulse width10s Repetitive frequency = 100Hz Ta = 25C 0.3 0.5 1 3 5 10 30 50 1.0 1.4 1.8 2.2 2.6 Forward current IF (mA) Pulse forward voltage VFP (V) 5 2007-10-01 TLP331,TLP332 IC/IF - IF 1000 4.0 Ta = 25C IC - VCE IF=1.0mA 500 3.5 IC/IF (%) 300 3.0 Current transfer ratio (mA) 100 50 30 Ta = 25C VCE = 5V VCE = 1.5V VCE = 0.5V 0.8mA 2.5 Collector current IC 2.0 0.6mA 1.5 0.5mA 10 0.1 0.3 0.5 1 3 5 10 1.0 0.4mA Forward current IF (mA) 0.5 0.2mA IC - IF 50 30 Ta = 25C VCE = 5V VCE = 1.5V VCE = 0.5V 30 10 IF=2mA 10 0 0.1 0.3 0.5 1 3 5 10 Collector-emitter voltage VCE (V) IC - Ta VCE = 1.5V VCE = 0.5V 5 3 (mA) 5 1mA (mA) Collector current IC 3 1 Collector current IC 0.5mA 1 0.5 0.3 0.5 0.3 0.1 0.2mA 0.05 0.03 0.1 0.05 0.01 0.1 0.03 0.3 0.5 1 3 5 10 -20 0 20 40 60 80 100 Forward current IF (mA) Ambient temperature Ta (C) 6 2007-10-01 TLP331,TLP332 ID - Ta 10 1 Switching Time - RL 5000 3000 10V Ta = 25C IF = 1.6mA VCC = 5V 5V VCE=24V 100 1000 (A) 500 10-1 300 Collector dark current ID(ICEO) 10-2 Switching time (s) tOFF 100 50 30 tS 10 -3 tON 10-4 10 5 10-5 0 3 1 20 40 60 80 100 120 3 5 10 30 50 100 Ambient temperature Ta (C) Load resistance RL (k) 7 2007-10-01 TLP331,TLP332 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-10-01 |
Price & Availability of TLP33107
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